Resistance of Membrane Retrofit Concrete Masonry Walls to Lateral Pressure

This paper first describes the current state of analysis for the response of unreinforced concrete masonry walls subjected to lateral uniform pressure. The formulation is based on the initial elastic response, the subsequent initiation of cracks and the nonlinear rocking response, and the eventual large displacement and potential collapse. The necessary equations are developed for these phases in the form of a resistance function. The paper then incorporates membrane retrofit materials to strengthen the wall’s resistance to lateral pressure, and develops the necessary resistance function equations. In blast tests, membrane retrofit unreinforced masonry walls have experienced severe cracking and large displacements without collapse. This is of high interest to the Department of Defense, the protection of diplomatic facilities, and the construction industry impacted by hurricanes and other high wind events. The paper concludes with examples that demonstrate application of membrane retrofits indeed increase the resistance of the wall to lateral pressure.     

Use of electron cyclotron resonance plasmas to prepare CdZnTe (211)B substrates for HgCdTe molecular beam epitaxy

Without any additional preparation, Cd_1−yZn_yTe (211)B (y∼3.5%) wafers were cleaned by exposure to an electron cyclotron resonance (ECR) Ar/H₂ plasma and used as substrates for HgCdTe molecular beam epitaxy. Auger electron spectra were taken from as-received wafers, conventionally prepared wafers (bromine: methanol etching, followed by heating to 330–340°C), and wafers prepared under a variety of ECR process conditions. Surfaces of as-received wafers contained ∼1.5 monolayers of contaminants (oxygen, carbon, and chlorine). Conventionally prepared wafers had ∼1/4 monolayer of carbon contamination, as well as excess tellurium and/or excess zinc depending on the heating process used. Auger spectra from plasma-treated CdZnTe wafers showed surfaces free from contamination, with the expected stoichiometry. Stoichiometry and surface cleanliness were insensitive to the duration of plasma exposure (2–20 s) and to changes in radio frequency input power (20–100 W). Reflection high energy electron diffraction patterns were streaked indicating microscopically smooth and ordered surfaces. The smoothness of plasma-etched CdZnTe wafers was further confirmed ex situ using interferometric microscopy. Surface roughness values of ∼0.4 nm were measured. Characteristics of HgCdTe epilayers deposited on wafers prepared with plasma and conventional etching were found to be comparable. For these epilayers, etch pit densities on the order of 10⁵ cm⁻² have been achieved. ECR Ar/H₂ plasma cleaning is now utilized at Night Vision and Electronic Sensors Directorate as the baseline CdZnTe surface preparation technique.     

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Tellurium adsorption studies were made on clean and arsenic passivated (112) silicon surfaces. Quantitative surface coverage values for tellurium were determined by Auger electron spectroscopy. Saturation coverage of up to 1.2 monolayers of tellurium could be obtained on a clean (112) silicon surface. On an arsenic passivated (112) Si surface however, the tellurium saturation coverage was limited to only ∼0.3 monolayer. Analysis of the adsorption behavior suggested that tellurium and arsenic chemisorption occurs preferentially at step edges and on terraces, respectively. The study revealed that arsenic passivation led to a significant decrease in the sticking coefficient of tellurium and an increase in it’s surface mobility. A model describing zinc telluride nucleation on a (112) Si surface is proposed. Thin templates of ZnTe followed by Cd_1−xZn_xTe layers were deposited on (112) Si by molecular beam epitaxy (MBE). The characteristics of the MBE Cd_1−xZn_xTe layers were found to be sensitive to the initial ZnTe nucleation and Si surface preparation.     

Investigation of HgCdTe surface quality following Br-based etching for device fabrication using spectroscopic ellipsometry

We have examined the etching of HgCdTe (x=0.2) with bromine/ethylene glycol (Br/EG) solutions. Using a spectroscopic ellipsometer, we tracked the ellipsometric parameters (ψ and Δ) of the freshly etched HgCdTe surfaces. Parameters ψ and Δ were measured periodically as these values changed with the surface exposed to air. A second set of Br/EG-etched samples was stored in deionized (DI) water. We found that DI water effectively preserved the freshly etched HgCdTe surface for a period of several hours. Comparison with the literature on HgCdTe surface chemistry implies that oxide growth is inhibited on the etched HgCdTe samples immersed in DI water. Modeling results based on the measured ψ and Δ values agree with this assessment.     

Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays

We report the development and fabrication of two-color mid-wavelength infrared (MWIR) and short-wavelength infrared (SWIR) HgCdTe-based focalplane arrays (FPAs). The HgCdTe multilayers were deposited on bulk CdZnTe (ZnTe mole fraction ∼3%) using molecular beam epitaxy (MBE). Accurate control of layer composition and growth rate was achieved using in-situ spectroscopic ellipsometry (SE). Epilayers were evaluated using a variety of techniques to determine suitability for subsequent device processing. These techniques included Fourier transform infrared (FTIR) spectroscopy, Hall measurement, secondary ion mass spectroscopy (SIMS), defect-decoration etching, and Nomarski microscopy. The FTIR transmission measurements confirmed SE’s capability to provide excellent compositional control with run-to-run x-value variations of ∼0.002. Nomarski micrographs of the as-grown surfaces featured cross-hatch patterns resulting from the substrate/epilayer lattice mismatch as well as various surface defects (voids and “microvoids”), whose densities ranged from 800–8,000 cm⁻². A major source of these surface defects was substrate particulate contamination. Epilayers grown following efforts to reduce these particulates exhibited significantly lower densities of surface defects from 800–1,700 cm⁻². Dislocation densities, as revealed by a standard defect-decoration etch, were 2–20×10⁵ cm⁻², depending on substrate temperature during epitaxy. The FPAs (128×128) were fabricated from these epilayers. Preliminary performance results will be presented.     

Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodes

The factors that affect the trench width and aspect ratio in electron-cyclotron resonance (ECR) etched HgCdTe and CdTe are investigated. The ECR etch bias and anisotropy are found to be predominately determined by the photoresist feature-erosion rate. The physical characteristics of the trenches are attributed to ECR plasma-etch chemistry. A method for fabricating high aspect-ratio, HgCdTe isolation trenches is demonstrated through a combination of advanced photolithography and ECR etching.     

Work stealing for GPU‐accelerated parallel programs in a global address space framework

Task parallelism is an attractive approach to automatically load balance the computation in a parallel system and adapt to dynamism exhibited by parallel systems. Exploiting task parallelism through work stealing has been extensively studied in shared and distributed‐memory contexts. In this paper, we study the design of a system that uses work stealing for dynamic load balancing of task‐parallel programs executed on hybrid distributed‐memory CPU‐graphics processing unit (GPU) systems in a global‐address space framework. We take into account the unique nature of the accelerator model employed by GPUs, the significant performance difference between GPU and CPU execution as a function of problem size, and the distinct CPU and GPU memory domains. We consider various alternatives in designing a distributed work stealing algorithm for CPU‐GPU systems, while taking into account the impact of task distribution and data movement overheads. These strategies are evaluated using microbenchmarks that capture various execution configurations as well as the state‐of‐the‐art CCSD(T) application module from the computational chemistry domain. Copyright © 2016 John Wiley & Sons, Ltd.     

焦炭局部换热系数与导热反问题的研究

在固定床干熄炉传热模拟装置中，利用导热反问题原理得到了焦炭床层的局部换热系数。结果表明，局部换热系数和平均换热系数的变化规律相似，增加冷却气体流量有利于提高换热系数，换热系数随焦炭粒度小而增加。     

Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si. Annealed and as-grown epilayers, in situ doped with indium, were exposed to a hydrogen plasma generated in an electron cyclotron resonance (ECR) reactor. Secondary ion mass spectrometry was used to measure the extent of hydrogen incorporation into the epilayers. Hall and photoconductive lifetime measurements were used to assess the efficacy of passivation. The passivation of defects responsible for the scattering and recombination of electrical carriers was observed for most ECR conditions over a range of dislocation densities.