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61.
Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl4, (C5H5)2Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed. 相似文献
62.
Sanghyun Ju Jianye Li Pimparkar N. Alam M.A. Chang R.P.H. Janes D.B. 《Nanotechnology, IEEE Transactions on》2007,6(3):390-395
Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold 相似文献
63.
In target detection tasks, responses are faster when displays have 2 targets (redundant-targets effect; RTE) and slower when they have no targets (nontargets effect; NTE) relative to displays with a single target. The psychological refractory period paradigm was used to localize these effects. In Experiment 1, participants classified tones as high or low and then classified letters as targets or nontargets after a short or long stimulus onset asynchrony (SOA). The magnitudes of the RTE and NTE did not depend on SOA. In Experiment 2, the order of the tasks was reversed, and at short SOAs the RTE and NTE had similar magnitudes for both tone discrimination and target detection responses. These findings suggest that the RTE and NTE arise during response selection. Interactive effects of tone pitch with the number and type of target features were also observed, and these were tentatively interpreted as synesthetic effects. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
64.
Four studies involving 573 female and 272 male college students demonstrated that multiple forms and measures of aggression were associated with high levels of sensation seeking, impulsivity, and a focus on the immediate consequences of behavior. Multiple regression analyses and structural equation models supported a theoretical model based on the general aggression model (C. A. Anderson & B. J. Bushman, 2002), positing that hostile cognition and negative affect mediate the relationships between the aforementioned individual differences and aggression. Sensation seeking also predicted a desire to engage in physical and verbal aggression. The final study demonstrated that relative to those scoring low, individuals scoring high on the consideration of future consequences are only less aggressive when aggression is likely to carry future costs. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
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Jeff Munch 《通讯世界》2003,9(6):102
~~CompactPCI系统管理@Jeff Munch$凌华科技!技术长暨国际PICMG 3.0委员会主席 相似文献
67.
Xing Gu Shariar Sabuktagin Ali Teke Daniel Johnstone Hadis Morkoç Bill Nemeth Jeff Nause 《Journal of Materials Science: Materials in Electronics》2004,15(6):373-378
ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. We developed a thermal treatment method to eliminate surface damage on the 0 face of ZnO (0 0 0 1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (0 0 0 1) annealed at 1050 °C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution X-ray diffraction measurements have been employed to investigate the effect of annealing on ZnO substrates. 相似文献
68.
基于电子设备的处理器系统设计人员经常在选择最佳电源架构时遇到困难。有时最佳的解决方案是插入式电源,而有时采用分立的元件组成的电源才是最佳解决方案。选择插入式电源解决方案相对来说比较直接,但对于缺乏电源设计经验的数字设计人员来说,设计一个分立电源解决方案可能会使他望而却步。大多 DC/DC 电源控制 IC 供应商均可提供有助于电路设计的详细辅助材料。但是,在开始电源设计之前,设计人员必须选择正确的拓扑。本文将介绍以下方法,来帮助为某些用于MCU、DSP及基于FPGA 的电子产品的最常用结构选择正确的电源拓扑。线性调节… 相似文献
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