Influence of Titanium Excess in a Ti–Si Reaction Mixture on the Synthesis of a Composite in a Combustion Wave

Theoretical Foundations of Chemical Engineering - On the basis of the classic concepts of the theory of solid-phase combustion, for the first time, a model with a detailed scheme of chemical...     

Effective prediction and resource allocation method (EPRAM) in fog computing environment for smart healthcare system

Multimedia Tools and Applications - Recently, many concepts in technology has been changed. According to the digital transformation trends, Internet of Things (IoT) represents an interested...     

The Boundedness and the Global Mittag-Leffler Synchronization of Fractional-Order Inertial Cohen–Grossberg Neural Networks with Time Delays

Neural Processing Letters - The boundedness and the global Mittag-Leffler synchronization (GMLS) of fractional-order inertial Cohen–Grossberg neural networks (CGNNS) with time delays are...     

以新发展理念引领高校专业基础课教学改革

以“创新、协调、绿色、开放、共享”为内核的新发展理念，是对马克思主义发展理念的继承和发扬，极具时代精神，富含问题意识，为高校思想政治教育发展、教育教学改革实践提供了强大的理论支撑。本文以“通信原理”为例，阐述了新发展理念在课程改革中的思路和方法，实现了思想政治教育与专业基础课程有机融合，为深化高校教学改革、创新人才培养模式提供了思路。     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Modeling of Ignition and Combustion of a Coflowing Hydrogen Jet in a Supersonic Air Flow

Combustion, Explosion, and Shock Waves - Results of a numerical study of mixing, ignition, and combustion of a cold hydrogen jet propagating along the lower wall of a channel parallel to a...     

Low light enhancement algorithm for color images using intuitionistic fuzzy sets with histogram equalization

Multimedia Tools and Applications - In this work, a new fuzzy logic-based algorithm is proposed for the enhancement of low light color images. A generalization of a fuzzy set known as an...