Reliability optimization of communication networks using simulated annealing

Two concepts of communication network reliability are considered. The first one, the ‘s-t’ reliability, is relevant for communication between a source station and a terminal station as in the case of a two way telephone communication. The second one, the overall reliability, is a measure of simultaneous connectedness among all stations in the network. An algorthm is presented which selects the optimal set of links that maximizes the overall reliability of the network subject to a cost restriction, given the allowable node-link incidences, the link costs and the link reliabilities. The algorithm employs a variaton of the simulated annealing approach coupled with a hierarchical strategy to achieve the gobal optimum. For complex networks, the present algorithm is advantageous over the traditional heuristic procedures. The solutions of two representative example network optimization problems are presented to illustrate the present algorithm. The potential utilization of parallel computing strategies in the present algorithm is also identified.     

EFFECT OF OVERSTRESSING ON FATIGUE BEHAVIOUR OF AUSTEMPERED DUCTILE IRON

Abstract Studies have been conducted on the effect of overstressing in rotary bending fatigue on the fatigue properties of an annealed and austempered ductile iron containing 1.5 Ni–0.3 Mo. For various R ratios S–N curves were determined and the fatigue limit estimated. It was found that the fatigue limit was a function of the level of overstressing and cycle ratio. In the case of austempered samples a beneficial effect of overstressing was observed at a certain level of overstressing. This was related to the work hardening behaviour of the austenite phase. In annealed samples, a reduction in the fatigue limit was observed at all levels of overstressing.     

Strength,fracture, and fatigue behavior of advanced high-temperature intermetallics reinforced with ductile phases

The results of recent studies on the fatigue and fracture behavior of extruded Ti-48A1 + 20 vol pct TiNb and hot-isostatically pressed (“hipped”) MoSi₂ + 20 vol pct Nb are presented (compositions in atomic percent unless stated otherwise). The effects of ductile phase reinforcement of Ti-48A1 and MoSi₂ on the micromechanisms of fracture under monotonie and cyclic loading are elucidated. Micromechanics models are applied to the prediction of crack-tip shielding components, and the effects of temperature on tensile/compressive/flexure strengths are discussed. Ductile phase toughening under monotonie loading conditions is shown to be associated with lower fatigue crack growth resistance. The lower fatigue resistance is attributed to the absence of crack-tip shielding, higher crack opening displacements, and the effects of inelastic strains that are developed in ductile phase-reinforced composites under cyclic loading conditions. S.M.L. SASTRY, formerly Program Manager and Fellow, McDonnell Douglas Research Laboratories. This article is based on a presentation made in the symposium “Quasi-Brittle Fracture” presented during the TMS fall meeting, Cincinnati, OH, October 21–24, 1991, under the auspices of the TMS Mechanical Metallurgy Committee and the ASM/MSD Flow and Fracture Committee.     

Nonlinear analysis of reinforced concrete hyperboloid cooling towers—II. Parametric study and results

In this second and final part of this series of papers the details of parametric studies conducted to assess the influence of various geometric and material parameters on the load-displacement response of three reinforced concrete hyperboloid cooling towers are presented. The material model adopted for the nonlinear finite element analysis is described in part I of this paper.     

Imaging of acute right lower abdominal quadrant pain

This article reviews the clinical diagnosis of appendicitis, indications and options for appendiceal imaging, compares appendiceal CT techniques, and describes the imaging findings with appendicitis and alternative conditions that can clinically mimic appendicitis.     

Influence of chromium and impurities on the grain- refining behavior of aluminum

The grain-refining behavior of high purity aluminum (HPA1) and commercial purity aluminum (CPA1) containing Fe and Si as impurities (<0.2 wt pct each) has been studied with and without the presence of Cr in small and large quantities (0.2 and 2 wt pct). The Al-5Ti-lB master alloy ingot (0.2 wt pct) was used as a grain refiner. The emphasis was on the influence of individual elements and their interactions with the other elements on the grain-refining behavior of Al. Good grain refinement with insignificant fading in CPA1 was observed in comparison to HPA1. Similar results were obtained with a small concentration of Cr in HPA1 in HPA1-0.2 wt pct Cr alloy. The CPA1 and HPA1-0.2 wt pct Cr alloy have given the best grain-refining results among all the cases studied. A combination of small quantities of Fe, Si, and Cr (CPA1-0.2 wt pct Cr) has shown early and significant fading. A large concentration of Cr (2 wt pct) has shown a poisoning effect irrespective of the presence or absence of impurities such as Fe and Si in Al. Thus, Cr was found to be beneficial for grain refinement at smaller concentrations in the absence of impurities. But at higher concentrations of Cr, it had an adverse effect,i.e., led to coarser grain sizes both in the presence and absence of impurities.     

Highly conductive buried n+ layers in lnp:fe created by MeV energy Si,S, and Si/S implantation for application to microwave devices

To obtain highly conductive buried layers in InP:Fe, MeV energy Si, S, and Si/ Simplantations are performed at 200°C. The silicon and sulfer implants gave 85 and 100 percent activation, respectively, for a fluence of 8 × 10¹⁴ cm⁻². The Si/S co-implantation also gave almost 100 percent donor activation for a fluence of 8 × 10¹⁴ cm⁻² of each species. An improved silicon donor activation is observed in the Si/S co-implanted material compared to the material implanted with silicon alone. The peak carrier concentration achieved for the Si/S co-implant is 2 × 10¹⁹ cm³. The lattice damage on the surface side of the profile is effectively removed after rapid thermal annealing. Multiple-energy silicon and sulfur implantations are performed to obtain thick and buried n⁺ layers needed for microwave devices and also hyper-abrupt profiles needed for varactor diodes.     

Lymphocytopenia and thrombocytopenia during treatment with risperidone or clozapine

The atypical antipsychotic clozapine is associated with several well-known abnormalities of blood cell count, whereas only rare reports are associated with the neuroleptic risperidone. This report describes lymphocytopenia and thrombocytopenia under treatment with risperidone which continued after changing to clozapine without other clinically significant abnormal hematological parameters. Within one week after discontinuation of both neuroleptics abnormalities of blood cell count reversed to the initial values. Abnormalities of lymphocytes or thrombocytes are rare side-effects under treatment with risperidone or clozapine.     

A¨nalysis of floating body effects in thin film conventionaland single pocket SOI MOSFETs using the GIDL current technique

Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional) SOI MOSFETs. The GIDL current technique has been used to characterize the parasitic bipolar transistor gain for both conventional and SP-SOI MOSFETs. From 2-D device simulations, the lower floating body effects in SP-SOI MOSFETs are analyzed and compared with the conventional MOSFETs