Understanding temporal structure for video captioning

Pattern Analysis and Applications - Recent research in convolutional and recurrent neural networks has fueled incredible advances in video understanding. We propose a video captioning framework...     

From waste to wealth: recycling the secondary resource from steel ladle as a flux in Si-killed steelmaking process

With the regulations pertaining to the environment and waste disposal becoming stringent day by day, the steelmaking industry is being compelled to adopt a zero-waste-policy for sustainability. As a consequence, 3R (reduce, reuse and recycle) technique of waste handling has become the most favoured option among the industries. This paper focuses on recycling of slag generated after secondary refining process. Trials were conducted in two stages, namely (a) prevention of dusting phenomenon of Al-killed steel ladle slag to generate lump slag by suitably selecting the ladle covering compound and chemically modifying the slag, and (b) utilisation of the lump slag as a 100% replacement of synthetic slag in Si-killed steel ladles, leading to a reduction in its specific consumption from 1.2?kg/TLS to zero. As a process requirement, specific power consumption, arcing time and degree of desulphurisation were considered as the major parameters for comparing the results using hypothesis test statistical tool.     

场引晶体管理论:Ⅻ.双极飘移扩散电流(薄及厚、纯及不纯基体,单及双MOS栅极)

上篇论文(Ⅺ)报告双极场引晶体管的电化电流理论,这篇论文(Ⅻ)报告飘移扩散理论.两篇都讨论了单栅双栅,纯基不纯基,薄基厚基的情形.两篇都用表面及内部电势作为参变量耦合电压方程和电流方程.在这飘移扩散理论中,有许多电流项,属飘移电流的用迁移率因子标识,属扩散电流的用扩散率因子标识.给出完备飘移扩散解析方程,用以计算四种常用MOS晶体管的直流电流电压特性.飘移电流有四项:一维体电荷漂移项,一维载子空间电荷漂移项,一维横向电场漂移项,二维漂移项.扩散电流有三项:一维体电荷扩散项,一维载子空间电荷扩散项,二维扩散项.现有的晶体管理论都没认识到一维横向电场漂移项.当基区几乎是纯基,这项贡献显著,约总电流的25%.二维项来自纵向电场的纵向梯度,它随德拜长度对沟道长度比率的平方按比例变化.当沟道长度为25nm,几乎纯基时,(LD/L)2=106,杂质浓度1018cm-3时,(LD/L)2=10-2.     

Cardiac hypertrophy induced by mitogen-activated protein kinase kinase 7, a specific activator for c-Jun NH2-terminal kinase in ventricular muscle cells

Activation of stress-activated protein kinases, including the p38 and the c-Jun NH2-terminal kinases (JNK), have been associated with the onset of cardiac hypertrophy and cell death in response to hemodynamic overload and ischemia/reperfusion injury. Upon infection of cultured neonatal rat cardiac myocytes with recombinant adenoviral vectors expressing a wild type and a constitutively active mutant of MKK7 (or JNKK2), JNK was specifically activated without affecting other mitogen-activated protein kinases, including extracellular signal-regulated protein kinases and p38. Specific activation of the JNK pathway in cardiac myocytes induced characteristic features of hypertrophy, including an increase in cell size, elevated expression of atrial natriuretic factor, and induction of sarcomere organization. In contrast, co-activation of both JNK (by MKK7) and p38 (by MKK3 or MKK6) in cardiomyocytes led to an induction of cytopathic responses and suppression of hypertrophic responses. These data provide the first direct evidence that activation of JNK alone is sufficient to induce characteristic features of cardiac hypertrophy, thereby supporting an active role for the JNK pathway in the development of cardiac hypertrophy. The cytopathic response, as a result of co-activation of both JNK and p38, may contribute to the loss of contractile function and viability of cardiomyocytes following hemodynamic overload and cardiac ischemia/reperfusion injury.     

Reliability analysis and design for the fine-pitch flip chip BGA packaging

The geometry of solder joints in the flip chip technologies is primarily determined by the associated solder volume and die/substrate-side pad size. In this study, the effect of these parameters on the solder joint reliability of a fine-pitched flip chip ball grid array (FCBGA) package is extensively investigated through finite element (FE) modeling and experimental testing. To facilitate thermal cycling (TC) testing, a simplified FCBGA test vehicle with a very high pin counts (i.e., 2499 FC solder joints) is designed and fabricated. By the vehicle, three different structural designs of flip chip solder joints, each of which consists of a different combination of these design parameters, are involved in the investigation. Furthermore, the associated FE models are constructed based on the predicted geometry of solder joints using a force-balanced analytical approach. By way of the predicted solder joint geometry, a simple design rule is created for readily and qualitatively assessing the reliability performance of solder joints during the initial design stage. The validity of the FE modeling is extensively demonstrated through typical accelerated thermal cycling (ATC) testing. To facilitate the testing, a daisy chain circuit is designed, and fabricated in the package for electrical resistance measurement. Finally, based on the validated FE modeling, parametric design of solder joint reliability is performed associated with a variety of die-side pad sizes. The results show that both the die/substrate-side pad size and underfill do play a significant role in solder joint reliability. The derived results demonstrate the applicability and validity of the proposed simple design rule. It is more surprising to find that the effect of the contact angle in flip chip solder joint reliability is less significant as compared to that of the standoff height when the underfill is included in the package.     

On the ‘excess white noise’ in MOS transistors

Special silicon MOS transistors are fabricated to demonstrate that the proposed ‘excess white noise’ attributed to the mobility fluctuation does not exist. The previously observed excess noise over the white thermal noise is shown to be caused by a 1/f-type noise component due to noise measurements at insufficiently high frequencies on devices which have very high 1/f noise.     

The hydrogenated amorphous silicon active hollow four quadrantorientation detector for application to neural network imagesensors

The fundamental way to improve the processing speed of pattern recognition is to implement the data processing function by hardware circuits. A simple integrated device by combining hollow four quadrant orientation detector (hollow FOQUOD) with an amorphous silicon thin film transistor as a switch element has been successfully fabricated. This device is called active hollow FOQUOD. The hollow FOQUOD detector can extract the edge position and its orientation from an object image with a precision of 5° which is consistent with the theoretical simulation. It is demonstrated that the thin film transistor can indeed switch the hollow FOQUOD detector on and off and avoid the crosstalk problem when used in a 3×3 two-dimensional array     

Evaluation of a Microreservoir-Type Biodegradable Microcapsule for Controlled Release of Proteins

For the controlled release of a model protein bovine serum albumin, a biodegradable microreservoir-type microcapsule was prepared. BSA was incorporated into the microcapsules with high efficiency of 96.1 (±3.1)%. The encapsulation did not cause any changes in the molecular weight and conformation of BSA, which was proven by biochemical analyses such as gel electrophoresis, circular dichroism, and HPLC.

The compositions and fabrication technique of microcapsules were found to be closely related to the release of BSA from the microcapsules and their degradation. Depending on microcapsule formulations, the in vitro release profile of BSA was either monophasic or biphasic. The microcapsules provided various release rates. It was also possible to control the delay before the initiation of BSA release and total duration of its delivery.     

Base current relaxation transient in reverse emitter-base biasstressed silicon bipolar junction transistors

The base current relaxation transient following reverse emitter-base (EB) bias stress and its effect on time-to-failure (TTF) determination are examined in self-aligned and nonself-aligned silicon bipolar junction transistors (BJTs) with thermal and deposited base oxide. A quantitative model indicates that the transient is due to a reduction of the stress-generated positive charge trapped in the oxide layer near the emitter-base junction due to holes tunneling from oxide hole traps to silicon band states or SiO₂/Si interface traps. The neutral oxide hole traps may be quickly recharged through hole tunneling or hole injection into the oxide during further reverse-bias stress. A delay time of ~10^-3 s was observed after the termination of stress before base current relaxation begins, which affects the extraction of the ac operation TTF from dc stress measurements