Nuclear data sensitivity/uncertainty analysis for XT-ADS

The XT-ADS, an accelerator-driven system for an experimental demonstration, has been investigated in the framework of IP EUROTRANS FP6 project. In this study, the sensitivity and uncertainty analyses were performed to comprehend the reliability of the XT-ADS neutronic design.     

Study on environmental effect on fatigue and creep-fatigue strength of 316FR stainless steel in sodium at elevated temperature

Low-carbon 316 stainless steel with medium-nitrogen (316FR) is considered as the principal structural material for next generation fast breeder reactor (FBR) plants in Japan. The material strength standard and the creep-fatigue life evaluation method for 316FR have been developed. However, they are based on the results of material tests in air, while actual structural material will be used mainly in liquid sodium environment in the plants. In order to clarify the environmental effect, cyclic bending tests were carried out with and without hold time in sodium. Tested materials were 316FR and conventional 304 and 316 stainless steels. Weld metal of 316FR was also tested. As a result, it was found that fatigue and creep-fatigue lives of 316FR in sodium were larger than those in air and no explicit consideration of the environmental effect is necessary in design. It was also found that the life evaluation method based on the ductility exhaustion concept is applicable to creep-fatigue life assessment in sodium.     

Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2

Si₃N₄ layers were obtained on a quartz substrate from a gas mixture of Si₂Cl₆, NH₃ and H₂ under a reduced pressure in a temperature range of 800 to 1300‡ C. Amorphous Si₃N₄ layers that were dense and adherent to the substrate were obtained in a temperature range of 800 to 1100‡ C. On the other hand,α-Si₃N₄ layers were obtained at 1200‡ C and a source-gas ratio (N/Si) of 1.33 to 1.77. The lowest deposition temperature of amorphous Si₃N₄ was considered to be about 700‡ C. The microhardness of amorphous Si₃N₄ obtained in a temperature range of 800 to 1100‡ C was 2400 to 2600 kg mm⁻² (load: 50 g), and that ofα-Si₃N₄ obtained at 1200‡ C was 3400 kg mm⁻². Chlorine contents in the Si₃N₄ layer decreased with increasing deposition temperature and source-gas ratio (N/Si), and with decreasing total pressure.     

Promotive effect of isopentane on cyclohexane isomerization catalyzed by sulfated zirconia

Cyclohexane isomerization to methylcyclopentane over sulfated zirconia is markedly enhanced in the presence of isopentane which acts as a hydride transfer agent to facilitate the slow step of hydride transfer from cyclohexane to isopropyl cation. This was revealed by deuterium tracer studies. This revised version was published online in July 2006 with corrections to the Cover Date.     

Melting attack of solid plates by a high temperature liquid jet — effect of crust formation

When a molten UO₂ jet impinges on a steel structure in a reactor vessel during a severe accident, the erosion rate of the steel by the molten UO₂ jet is expected to be limited considerably by a UO₂ crust layer forming on a molten steel substrate at the jet/steel plate interface. A series of simulation experiments was performed to study the melting behavior of solid plates by high temperature liquid jets and the effects of crust forming at jet/structure interface. In the first series of experiments, salt (NaCl) was selected as the jet material and tin (Sn) as the solid structure. The experiments were conducted with varying the jet diameter (10 30 mm) and jet temperature (900 1100°C). The jets were accelerated to a range of 3 5 m/s at the nozzle outlet by gravitational force and impinged perpendicularly to the solid plate underneath. Furthermore, to check the effects of the thermo-physical properties on the erosion behaviors, preliminary experiments were performed by using a molten Al₂O₃ jet ( 2200°C) impinging on stainless steel plate at room temperature. The erosion rates obtained in the present experiments were far less than the values predicted by an analytical solution that neglects the existence of a crust layer and its thermal effects. With the inclusion of the crust behavior in the model, the experimental results were predicted fairly well. From the present experiments, a Nusselt number of the turbulent heat transfer, which takes into account simultaneous melting and freezing in the impingement region of a molten jet, is correlated by a Reynolds number and a Prandtl number as follows: Nu_m = 0.0033 Re---Pr.In conclusion, the existence of a crust layer plays an important role in the erosion process of a solid plate by the molten fuel jet with high melting point as in a reactor situation.     

Control of nano-sized interlayer space of lamellar vanadyl benzylphosphate

Nano-sized interlayer space of lamellar vanadyl benzylphosphate was controlled by water content in starting solution. Depending on the water content, three types of lamellar vanadyl benzylphosphate having basal spacings of 1.4 nm, 1.9 nm and 2.3 nm were obtained. It was suggested that the difference in the concentrations of benzyl and hydroxyl groups in the interlayer leads to the variation of the interlayer space.     

Structural Analysis on Organic Thin-Film Transistor With Device Simulation

A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.     

SrO capping effect for La2O3/Ce-silicate gate dielectrics

The chemical bonding states and electrical characteristics of SrO capped La₂O₃/CeO_x gate dielectric have been examined. Angle-resolved X-ray photoelectron spectroscopy measurement has revealed that Sr atoms diffuse into silicate layer to form SrLa-silicate after annealing. Owing to the incorporation of Sr atoms into silicate layer, a transistor operation with an equivalent oxide thickness (EOT) below 0.5 nm has been demonstrated. A strongly degraded effective electron mobility of 78 cm²/V s at 1 MV/cm has been obtained, which fit well with the general trend in small EOT range below 1 nm. Although process optimization is needed to improve the performance of transistors, Sr capping technique can be useful for EOT scaling.