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81.
Characterisation of a BioFET for detection of albumin in a mixture of human urine is presented. To avoid electrolyte effect of the urine, it was measured in PBS (phosphate buffer saline) at a fixed pH after albumin binding. The drain current was modulated by the albumin bound to the anti-albumin immobilised on the gate surface of the BioFET. The current variation ratio was likely to be proportional to the concentration of the albumin in the range 50-250 mg/1. The results show the feasibility of the BioFET as a urinary albumin sensor.  相似文献   
82.
Effects of austenitizing treatment temperatures on aqueous corrosion properties of martensitic stainless steels were investigated by electrochemical tests (potentiodynamic test, potentiostatic test and electrochemical impedance spectroscopy), and surface analyses (optical microscopy and XRD). The results of potentiodynamic test revealed that the breakdown potential increased with the increased austenitizing temperature, indicating increased relative resistance to initiation of localized corrosion. EIS measurements showed that MSS3 (1030 °C) exhibits larger polarization resistance value than MSS1 (970 °C) and MSS2 (1000 °C) at passive and breakdown states. This was caused by decreasing the amount of Cr-rich M23C6 carbide which acts as preferential sites for pitting corrosion.  相似文献   
83.
GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.  相似文献   
84.
Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.  相似文献   
85.
In this paper, we introduce a transmit multiple-input multiple-output (MIMO) scheme with frequency domain pre-equalization for a multipath or frequency selective channel. In this scheme, MIMO processing in the frequency domain is performed at the transmitter or base station so that the receiver or mobile station only requires limited processing. This scheme provides high data rates and also inherits from the frequency domain equalization the property of relatively low complexity in severe multipath environments. The MIMO transmit processing is derived by minimizing the minimum mean square errors (MMSE), and expressions for the signal-to-interference-plus-noise ratio and error probability based on the Gaussian approximation of the interference term are provided. Some important associated issues, such as channel errors and computational complexity, are also investigated. Numerical simulations are also provided and these demonstrate the improved performance of our proposed scheme compared to other transmit MIMO schemes. In particular, they show that the proposed system can attain multipath or frequency diversity of the channel.  相似文献   
86.
Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.  相似文献   
87.
We developed a new type of human-sized biped walking robot (BWR) driven by the closed-chain type of joint actuator. Each leg of the robot is composed of three pitch joints and one roll joint. In all, a 15 degree-of-freedom robot including four arm joints and three joints for the head was developed. The BWR was developed to walk autonomously such that all leg joints are actuated by small 90 W dc motors/drivers and dc batteries and controllers which are boarded. The joint actuator for the BWR is composed of the four-bar-link mechanism driven by the ball screw which has high strength and high gear ratio. A dynamics modeling of the developed BWR for forward walking is presented in which the revolute joint dynamics are transformed into the prismatic joint dynamics of the ball screw. Also, an analysis on the four-bar-link mechanism applied to the joint actuator and on the structure of the BWR is shown. The design specification of the actuating motor for the BWR is analyzed through the torque analysis of the four-bar-link actuator. Through walking experiments of the BWR, the walking performance and trajectory tracking ability is shown. © 2004 Wiley Periodicals, Inc.  相似文献   
88.
Baldi  A. Choi  W. Ziaie  B. 《IEEE sensors journal》2003,3(6):728-733
In this paper, we report on the design, fabrication, and test of a passive pressure transensor. The sensor uses the self-resonant frequency modulation of an integrated coil to detect the pressure variations. This modulation is generated by the relative displacement of a ferrite core attached to a silicone rubber membrane. This scheme simplifies the packaging of the passive transensor by removing the requirement for a separate capacitor to form the resonator. A 30-turn 1.7-/spl mu/H coil having dimensions of 3/spl times/3 mm/sup 2/ is used in a prototype design yielding a sensitivity of 9.6 kHz/kPa with a cylindrical ferrite core of 0.95-mm diameter and 0.5-mm height. We also present a theoretical model of the sensor that shows good agreement with the experimental data. This model can be a useful tool for further optimization of the senors.  相似文献   
89.
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.  相似文献   
90.
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