Effect of Strain Rate on Discontinuous Flow and Mechanical Characteristics of High-Nitrogenous Steel

Experimental study on the effect of strain rate on discontinuous flow and mechanical characteristics of the high-nitrogenous steel Kh23AG19F has been performed. Within the range of strain rates from 4.62 · 10^-5 to 1.85 · 10 ^-4 s^-1, discontinuous flow, reflected by serration on the tensile diagram, is chiefly determined by intergranular deformation mechanisms. Under strain rates over 1.85 · 10^-2 s^-1, combined deformation modes prevail, which cause a change in the character of discontinuous flow and transform a serrated tensile diagram into a wavy graph, with the yield stress of steel increased significantly.     

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures

The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E _g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E _g (including the case of CO₂ laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T _c = 45 K); at higher temperatures, the effect disappears.     

Synthesis of an isotropic reradiator for suppression of TE-polarized wave scattering by a perfectly conducting cylinder

The problem of synthesis of an isotropic reradiator providing for the transparency of a circular perfectly conducting cylinder illuminated by a TE-polarized plane wave is investigated. A general solution to the problem of diffraction from the cylinder with a reradiator is obtained, and a system of nonlinear equations for the synthesis problem is derived. Numerical solution of the synthesis problem is illustrated by a number of examples.     

Power-aware network swapping for wireless palmtop PCs

Virtual memory is considered to be an unlimited resource in desktop or notebook computers with high storage capabilities. However, in wireless mobile devices, like palmtops and personal digital assistants (PDAs), storage memory is limited or absent due to weight, size, and power constraints, so that swapping over remote memory devices can be considered as a viable alternative. However, power-hungry wireless network interface cards (WNICs) may limit the battery lifetime and application performance if not efficiently exploited. In this paper, we study performance and energy of network swapping in comparison with swapping on local microdrives and flash memories. We report the results of extensive experiments conducted on different WNICs and local swapping devices, using both synthetic and natural benchmarks. Our study points out that remote swapping over power-manageable WNICs can be more efficient than local swapping, especially in bursty workload conditions. Such conditions can be forced where possible by reshaping swapping requests to increase energy efficiency and performance.     

Operating Penalties in Single-Fiber Operation 10-Gb/s, 1024-Way Split, 110-km Long-Reach Optical Access Networks

We report for the first time optical signal-to-noise penalties which lead to performance degradations in single-fiber long-reach optical access networks when compared to identical dual-fiber systems. A simplified architecture, with reduced optical amplifier count compared to previous work, for single-fiber operation of a symmetrical 10-Gb/s, 1024-way split, 110-km long-reach optical access network is presented and demonstrated. In addition, a possible solution to remove the optical signal-to-noise penalty is suggested     

Co-digestion of manure and biowaste according to the EC animal by-products regulation and Finnish national regulations.

The objective of this study was to compare methane production and characteristics of digested material in anaerobic digestion concepts according to the Animal By-Products Regulation (ABP-Regulation) of the EC (hygienisation of biowaste for 1 hour at 70 degrees C, particle size < 12 mm) and Finnish national regulations (treatment temperature 55 degrees C, feeding interval 24 h, hydraulic retention time (HRT) 20 d, particle size < 40 mm) and with small variations in treatment methods for treating manure and biowaste. Moreover, the survival of three different salmonella bacteria in these processes was studied. Hygienisation of biowaste prior to digestion at 35 degrees C enhanced methane production by 14-18% compared to similar treatment without hygienisation. The differences in treatment temperature, HRT and hygienisation of biowaste prior to digestion did not significantly affect the characteristics of digested material. The concepts according to the ABP-Regulation and Finnish national regulations were effective in destroying salmonella bacteria to an undetectable level.     

Effect of surface waxes on the persistence of chlorpyrifos-methyl in apples, strawberries and grapefruits

The effects of the cuticle and epicuticular waxes of grapefruit, strawberry and apple on the photodegradation and penetration of chlorpyrifos-methyl were studied. Photodegradation experiments were conducted by exposing the insecticide to the light of a xenon lamp in the presence of a film of wax extracted from the fruit surface. The half-life of chlorpyrifos-methyl irradiated in absence of waxes was 9.6 min. The half-lives of pesticide irradiated in the presence of wax extracts of apple, grapefruit and strawberry were 83, 34 and 26 min, respectively. In penetration studies, fruit with and without wax layers were treated with an aqueous suspension of pesticide. The penetration of the pesticide from the cuticle to the pulp was measured after 24 h. Samples without wax contained a higher total amount of insecticide than those with wax. No pesticide was detected in samples of apple and grapefruit pulp. Residues were detected in all fractions of strawberry. The waxes and cuticle appear to have some effect on the photodegradation and penetration of chlorpyrifos-methyl in fruit samples.