Removal of nitrates from groundwater through the use of artificial wetlands

Intensive fertilizer use has led to nitrate contamination of groundwater in many areas. This article examines the possibility of removing nitrates through the construction of artificial wetlands. A pilot study conducted in Denmark has found that the method is effective and economical, at least for small waterworks, though further treatment is necessary before an acceptable microbiological water quality is attained.     

Quality of the surface of strip annealed in bell-type furnaces

Institute of Ferrous Metallurgy. Novolipetsk Metallurgical Combine. Translated from Metallurg, No. 11, pp. 32–33, November, 1989.     

OTDM transmitter using WDM-TDM conversion with an electroabsorptionwavelength converter

An all-optical multiplexing technique using wavelength division multiplexing (WDM)-time division multiplexing (TDM) conversion with an electroabsorption wavelength converter has been proposed and demonstrated. The effectiveness of this WDM-TDM conversion technique for various pulsewidth settings was experimentally investigated. The fluctuation of the signal performance, which was inevitably caused by the coherent crosstalk between adjacent pulses in the conventional optical time division multiplexing (OTDM) technique, were successfully suppressed, even in the case of wide pulse duration. High Q-factor performance has been maintained for a wide range of duty ration from 36% to 74%. By introducing this technique to the optical time division multiplexer, a highly stable and high-quality 40-Gb/s optical signal can be effectively produced without generating the short pulse or setting two tributaries at orthogonal polarization states, and without introducing high-speed electronics for signal multiplexing. The WDM-TDM conversion with an electroabsorption wavelength converter was extended to 60-Gb/s operation by using three 20-Gb/s tributaries. A clear eye opening was confirmed for a waveform after the WDM-TDM conversion of the 60-Gb/s signal     

Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganicchemical vapour deposition

The performance of an innovative delta-doped AlGaN/AlN/GaN heterojunction field-effect transistor (HFET) structure is reported. The epitaxial heterostructures were grown on semi-insulating SiC substrates by low-pressure metalorganic chemical vapour deposition. These structures exhibit a maximum carrier mobility of 1058 cm²/V s and a sheet carrier density of 2.35×10¹³ cm^-2 at room temperature, corresponding to a large n_s μ_n product of 2.49×10¹⁶ V s. HFET devices with 0.25 μm gate length were fabricated and exhibited a maximum current density as high as 1.5 A/mm (at V_G=+1 V) and a peak transconductance of g_m=240 mS/mm. High-frequency device measurements yielded a cutoff frequency of f_t≃50 GHz and maximum oscillation frequency f_max≃130 GHz     

Quantitative prediction of the degree of pollution of effluent from reactive dye mixtures

By using mathematical formulae developed in previous studies, certain pollution parameters of dye effluent obtained from reactive dyeing with a single dye can be predicted with good accuracy. In this study, the degree of pollution of reactive dyeing effluent using dye mixtures was also predicted by other approaches, such as linear and non-linear regression. The prediction accuracy was found to be satisfactory.