水动力学数学模型并行计算技术研究及实现

基于MPI(Message Passing Interface)消息传递实现了黄河二维水动力学数学模型的并行编程。以数据的分布存储作为区域划分的依据,实现了计算量的负载平衡;在全局网格和局部区域之间建立映射关系,并且在临界单元、进出口单元、共用节点等通过规约等进行特殊处理,一方面尽可能的减少通讯量,另一方面也避免消息的阻塞。采用曙光4000A系统的8个CPU进行计算的加速比达0.8,多CPU并行计算极大的提高了计算任务的容量,使得无法在单机上完成的巨量计算成为可能。     

透过3GSM看通信业未来发展两大趋势

3GSM大会的规模一年比一年大,此次是我连续第六次参加3GSM大会.仅大会的前3天就有55,000多名参观者,使今年的大会成为最热闹的一届.     

多掺炼新疆渣油的催化裂化工业生产技术

兰州石化公司以加工新疆原油为主，重油收率高，平均在37％左右，所生产的重油主要靠催化裂化装置来加工，多余部分以低附加值重油出厂。随着涩宁兰天然气工程的逐渐建成，低附加值重油出厂将受到严重威胁，因此，催化裂化装置加工重油显得尤为重要。兰州石化公司炼油厂1.2Mt/a重催装置通过采用先进技术进行改造，使重油掺炼比由41.52%提高到52.20%，提高了10.68个百分点，年多加工重油14.95万t，产品收率达到79.20%以上，能够灵活调节产品结构，创造了良好的经济效益。     

Coplanar stripline resonators modeling and applications to filters

This paper presents coplanar stripline (CPS) resonators and their practical implementations to filters. Five types of CPS resonator are built using open and short-ended strips. Lumped-element equivalent circuits are presented for each resonator. Their performances are investigated and compared in terms of Q factor or bandwidth. Two types of bandpass filter are developed with the resonators. The bandpass filters have low-passband insertion losses and wide-stopband suppression bandwidths. Lumped-element equivalent circuits are presented for the bandpass filters. A wide-band CPS-to-microstrip transition is developed for the measurements. The back-to-back transition has an insertion loss of less than 3 dB and a return loss of better than 10 dB for the frequency range from 1.3 to 13.3 GHz (1:10.2)     

石油系油浆与煤系闪蒸油的焦化性能——I．热解条件的影响

通过偏光显微镜观察了石油系油浆（LH）与煤系闪蒸油（SN）焦化后所得焦块的光学结构。结果表明，在较宽条件下两种原料单独焦化均得不到取向度高的流线型结构。将两种原料以一定比例混合后先热解丙焦化所得焦块的光学结构明显好于二者混合后直接焦化所得焦块的光学结构，其中LH和SN以3：2的重量比混合后在440℃、1MPa下热解3．5h然后再在530℃、1MPa下焦化8h所得焦块为具有较高取向度的流线型结构，适合于作为针状焦的起始原料。     

Residue curve maps for reactive distillation systems with liquid-phase splitting

A model has been developed to study the effects of chemical kinetics on the residue curve maps (RCM) for reactive distillation systems with liquid phase splitting. In the model, chemical reaction can occur in both or only one of the two liquid phases. The heating policy V/V₀=H/H₀ is applied so that the kinetic effect can be described by a single parameter, the Damköhler number Da. The effects of reaction kinetics on pseudohomogeneous and heterogeneous mixtures have been compared. The properties of their RCMs are the same outside, but are fully different inside the liquid-liquid (L-L) region if they have different chemical equilibrium curves. Inside the L-L region, the chemical equilibrium curve coincides to a unique reactive liquid-liquid tie line in case that the pseudohomogeneous chemical equilibrium curve intersects with the L-L envelope. When the reaction occurs in only one of the two liquid phases, the residue curves inside the L-L region are strongly affected by the L-L envelope, especially at high Da. In the present paper, first an illustrative arbitrary reaction system, and then the reaction of cyclohexene with water to cyclohexanol are analysed with respect to their RCMs.     

NFC移动通信终端的研究与应用

随着计算机网络及通信技术的发展,人们对短距离无线通信(NFC,Near Field Communication)的需求迅速增加。文中介绍了NFC技术的基本特点,给出了NFC的技术架构,然后在其基础上研究了NFC移动通信终端以及功能模块,并且给出了具体的应用,最后对NFC移动通信终端的应用前景做出展望。     

高层建筑损伤识别中的补偿算法

本文在已有研究工作的基础上，提出了处理激励测量信息不完备情况下的补偿算法。此方法主要针对高层建筑动力检测中强迫激励的情况，是一种基于时域的识别方法，该方法实际上是利用客观工程实际中结构系统激励所具有的物理持征作为识别计算的辅助条件，来解决测量信息的不完备性问题。算例分析表明了该方法的可行性。     

Hot-carrier-injected oxide region in front and back interfaces inultra-thin (50 nm), fully depleted, deep-submicron NMOS andPMOSFET's/SIMOX and their hot-carrier immunity

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 μm have fairly high hot-carrier immunity, even for single-drain structures