Effect of annealing on the structure and electrical properties of sulfur-doped amorphous c-BN layers

Undoped and sulfur doped amorphous cubic boron nitride (a-cBN) layers were deposited on to silicon substrates by reactive pulse plasma (RPP) method. Subsequently they were annealed at 475, 500 and 700 K for 1 h in pure nitrogen atmosphere. In this study structural and electronic properties of unannealed and annealed layers were investigated. The results show that a consequence of annealing is formation of microstructural stable nanocrystalline cubic boron nitride film as well as substitutional location of introducedin situ donor impurities. This resulted in creation of a-cBN(n-type)-Si(p-type) heterojunction.     

An Efficient Code-Based Voxel-Traversing Algorithm

The paper considers an efficient approach to traversing a uniformly-subdivided space pierced by a line segment. A voxel, as the basic constituent element of the uniformly subdivided space, is restricted to having the form of a cube. The algorithm works in two steps. In the first step, the so-called Bresenham voxels are identified and, by comparing their position codes, their type of connectivity is determined. To achieve the required connectivity between neighbouring voxels, the second step of the algorithm is applied to find the missing voxels. In this way, the algorithm efficiently switches between face-, edge- and vertex-connectivity. Although the algorithm works with oating-point precision, it is extremely computationally efficient, and tests of speed compared with the Müller, Cleary & Wyvill, Amanatides & Woo, and Zemčik algorithms are described.     

Dielectric integrity of thin thermal oxides on silicon

The role of silicon dioxide layers in microelectronics and the importance of their integrity are undisputable. From passivating coatings and masking layers for diffusion to ultra-thin tunneling films — all the silicon technology could not exist without silicon dioxide. This review deals with some aspects of the integrity of thin silicon dioxide films for VLSI applications. The problems of dielectric strength and wear-out are considered from the point of view of their mechanisms, models, oxide processing dependence, testing, and measuring. A brief presentation of statistical approaches commonly applied to reliability topics is also included.     

Determination of porous glass surface free energy components from contact angles

The contact angles of water drops and diiodomethane drops on pellets made of controlled porosity glasses have been measured. The surface of the glasses was modified by thermal treatment at 873 K which led to an increase in the surface concentration of boron atoms. Glass modified with Carbowax 20M (polyethylene glycol) and fully hydroxylated glass have also been studied. Using the measured contact angles and modified Young equation, the dispersion and nondispersion components of the glass surface free energy have been calculated. The values show that with increasing heating time (increasing surface density of boron atoms) an increase in the surface polarity takes place. However, the polarity of the same samples decreases after treatment with Carbowax, increasingly so with higher boron atom concentrations.     

Allotropic phase transformations induced by ultraviolet power laser irradiation of graphite

Optically induced allotropic phase transformations of carbon were studied. Under irradiation with a laser beam of 337.1 nm wavelength, at an energy density of 1.9 mJ per 0.1 mm², graphite transformed into -carbin, and amorphous carbon-film transformed into rhombohedral graphite with no evidence of high-temperature effects. The transformations differ from the changes occurring due to heating alone. We suggest that the results could be explained by the one-photon excitation and recombination of electrons.     

Allotropie phase transformation induced by UV power laser irradiation of boron nitride

The optically induced allotropic phase transformations of boron nitride were studied. Under irradiation with laser beam of 337.1 nm wavelength, at energy density of 1.9mJ per 0.1 mm² a hexagonal boron nitride transformed into the cubic form. The suggestion is made that the results obtained could be explained by the multiphoton excitation and recombination of electrons.     

Thermodynamic analysis of the refining of technical boron nitride

The efficiency of the process of refining technical boron nitride was assessed based on calculations of the chemical equilibrium in the B-N-O-C-Cl-H system. Three refining mixtures, CCl₄ + H₂, CCl₄ + NH₃ and CHCl₃ + NH₃, were considered. The analysis indicates that the use of ammonia-containing mixtures is more convenient, a lower residual oxygen content, lower contamination of the product by carbon and a better overall boron balance emerging. The calculations of the equilibrium composition of the solid phase enabled suitable technological conditions of the refining process (temperature and starting composition of the gaseous phase) to be established. The calculated results are compared with experimental data, and some observed differences are discussed.     

Observation of higher order NMR larmor lines by SQUID in solids at low magnetic field

We describe an apparatus allowing the observation of the NMR static longitudinal component of nuclear magnetizationM _z by a SQUID at low magnetic fields and atT=4.2 K in Plexiglas, Teflon, and CaF₂. The higher order NMR Larmor lines at 2f ₀, 3f ₀, and 4f ₀, wheref ₀ is the Larmor frequency of the allowed NMR line, were measured. These lines correspond to a flip of two, three, and four spins, respectively, by one photon. The amplitudes of 2f ₀ and 3f ₀ lines and their field dependences show that the common assertion that the forbidden lines at 2f ₀ and 3f ₀ appear in the same order of perturbation theory and that their intensity decreases with static magnetic fieldB ₀ asB ₀ ^–2 is wrong. In fact, the third Larmor line 3f ₀ appears at higher order than the second Larmor line 2f ₀ and its intensity decreases asB ₀ ^–4 . This is also shown by a theoretical calculation of its intensity. For the first time the NMR SQUID technique allowed the detection of the 4f ₀ line, corresponding to the simultaneous flip of four spins by one photon.     

Sensing properties of the CB-PCV composites for chlorinated hydrocarbon vapours

The conductivity measurements of carbon black (CB)-polyvinyl chloride (PCV) composite in a tetrachloride (CCl₄), trichloromethane (chloroform, CHCl₃) or methylene chloride (CH₂Cl₂) vapour ambient have been performed. The composite contains 20% Chezacarb K2 carbon black and was prepared as a plastic strip. Based on the =f(t) dependence, three methods to determine the vapour concentration,c, are presented. The investigations could allow one to construct a CCl₄ and CHCl₃ vapour detector.