Microstructure of Reaction Zone Formed During Diffusion Bonding of TiAl with Ni/Al Multilayer

In this article, the characterization of the interfacial structure of diffusion bonding a TiAl alloy is presented. The joining surfaces were modified by Ni/Al reactive multilayer deposition as an alternative approach to conventional diffusion bonding. TiAl substrates were coated with alternated Ni and Al nanolayers. The nanolayers were deposited by dc magnetron sputtering with 14 nm of period (bilayer thickness). Joining experiments were performed at 900 °C for 30 and 60 min with a pressure of 5 MPa. Cross sections of the joints were prepared for characterization of their interfaces by scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), high resolution TEM (HRTEM), energy dispersive x-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD). Several intermetallic compounds form at the interface, assuring the bonding of the TiAl. The interface can be divided into three distinct zones: zone 1 exhibits elongated nanograins, very small equiaxed grains are observed in zone 2, while zone 3 has larger equiaxed grains. EBSD analysis reveals that zone 1 corresponds to the intermetallic Al₂NiTi and AlNiTi, and zones 2 and 3 to NiAl.     

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120 °C and 1 kgf/cm² for 2 min, followed by a 10 min post-baking at 100 °C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-κ titanium oxynitride (TiO _x N _y ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon (～0.01 cm²/V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media.     

Calorimetric Measurements at Low Temperatures in Toluene Glass and Crystal

The specific heat of toluene in glass and crystal states has been measured both at low temperatures down to 1.8 K (using the thermal relaxation method) and in a wide temperature range up to the liquid state (using a quasiadiabatic continuous method). Our measurements therefore extend earlier published data to much lower temperatures, thereby allowing to explore the low-temperature “glassy anomalies” in the case of toluene. Surprisingly, no indication of the existence of tunneling states is found, at least within the temperature range studied. At moderate temperatures, our data either for the glass or for the crystal show good agreement with those found in the literature. Also, we have been able to prepare bulk samples of toluene glass by only doping with 2% mol ethanol instead of with higher impurity doses used by other authors.     

Modeling and performance analysis of an absorption chiller with a microchannel membrane‐based absorber using LiBr‐H2O,LiCl‐H2O,and LiNO3‐NH3

In order to develop compact absorption refrigeration cycles driven by low heat sources, the simulated performance of a microchannel absorber of 5‐cm length and 9.5 cm³ in volume provided with a porous membrane is presented for 3 different solution‐refrigerant pairs: LiBr‐H₂O, LiCl‐H₂O, and LiNO₃‐NH₃. The high absorption rates calculated for the 3 solutions lead to large cooling effect to absorber volume ratios: 625 kW/m³ for the LiNO₃‐NH₃, 552 kW/m³ for the LiBr‐H₂O, and 318 kW/m³ for the LiCl‐H₂O solutions given the studied geometry. The performance of a complete absorption system is also analyzed varying the solution concentration, condensation temperature, and desorption temperature. The LiNO₃‐NH₃ and the LiBr‐H₂O solutions provide the largest cooling effects. The LiNO₃‐NH₃ can work at a lower temperature of the heating source, in comparison with the one needed in a LiBr‐H₂O system. The lowest cooling effect and coefficient of performance are found for the LiCl‐H₂O solution, but this mixture allows the use of lower temperature heating sources (below 70°C). These results can be used for the selection of the most suitable solution for a given cooling duty, depending on the available heat source and condensation temperature.