HotSpot: a compact thermal modeling methodology for early-stage VLSI design

This paper presents HotSpot-a modeling methodology for developing compact thermal models based on the popular stacked-layer packaging scheme in modern very large-scale integration systems. In addition to modeling silicon and packaging layers, HotSpot includes a high-level on-chip interconnect self-heating power and thermal model such that the thermal impacts on interconnects can also be considered during early design stages. The HotSpot compact thermal modeling approach is especially well suited for preregister transfer level (RTL) and presynthesis thermal analysis and is able to provide detailed static and transient temperature information across the die and the package, as it is also computationally efficient.     

多元视觉显示中的变化盲问题

多元视觉显示界面逐渐成为主要的信息显示方式。观察者经常不能探测到场景中大的变化,并且高估自己的变化探测的能力,严重削弱了信息系统的使用效率。针对这种变化盲现象进行了回顾,分析总结影响操作人员变化探测能力的因素,对信息系统的显示界面设计使用和研究具有积极的指导意义。     

板中油田东部板桥油层组沉积相及砂体分布规律研究

板中油田已进入开发中后期，由于含油面积大、断块多、含油井段长，具有多套油水系统,该区的勘探开发是一个不断认识、不断挖潜的过程。在消化吸收前人研究成果的基础上，根据区域背景、沉积特征和砂体形态等综合分析．确定主力油层组——板桥油层组沉积物为重力流水道沉积，以取心井建立的单井相模式为依据，利用典型的测井曲线、形态特征、砂岩等厚图及钻井沉积剖面特征等多种反映沉积演化规律的地质信息，将重力流水道沉积体系划分为水道、水道侧翼、水道间、湖盆泥4种微相，进一步利用取心和测井资料．确定储集层物性与沉积相的关系，为滚动勘探开发和综合治理提供了可靠的地质依据。     

0-3型压电复合材料圆柱形水听器

使用0-3型PZT/P(VDF-TFE)压电复合材料研制出一种圆柱形水听器,对水听器的结构、材料以及灵敏度进行了理论分析,测量了水听器样品灵敏度随频率的变化曲线。研究结果表明,利用0-3型PZT/P(VDF-TFE)压电复合材料可制作出灵敏度高达-202.3 dB ref.1V/μPa的水听器,静态电容量较大,制作工艺简单,实际测量值和理论计算值很相近。     

Deformable template recognition of multiple occluded objects

Based on deformable templates, the paper formulates an integrated and flexible Bayesian recognition system of multiple occluded objects. Various local dependence properties of the model are obtained to reduce the computational cost with the increase in the number of objects. Numerical results for a synthetic image and for a real image of mushrooms are discussed     

CMOS scaling into the nanometer regime

Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling     

复杂形体目标激光散射特征测量系统的研制

复杂形体目标激光散射特征的测量系统中，利用反射式离轴光路满足了可见到远红外波段的测量需要，通过大孔径（250mm）物方远心接收光路实现了对实际远场的模拟测量，以光滑镀金球体作为标准器，可直接获得任意目标散射截面的绝对值。在0．6328、1．06和10．6μm三个波段针对标准器的实测结果表明，平均误差小于4．95％。     

改善高平均功率固体激光器光束质量的研究

本文首先概述了内含热透镜的激光谐振腔的分析方法，提出影响高平均功率固体激光器光束质量的主要因素是激光介质的热效应，尤其是非对称的热透镜象差。因此，改善光束质量的途径是补偿或修正透镜象差，使光束质量达到非相干多模振荡的理论值。     

31位低频声表面波可程序匹配滤波器

报道了３１位声表面波可程序匹配滤波器的结构、设计和性能参数。声表面波可程序抽头延迟线是近年来快速发展的直扩技术广泛应用的一种器件。它的强大信号处理能力和极高的运算速度，使得直扩序列信号的快速同步及匹配滤波较传统的技术大为简化。文章报道的３１位声表面波低频可程序抽头延迟线是一种用于扩频抗干扰通信系统所用的关键信号处理器件。在研制过程中，采用的ＣＯＭＳ／ＳＯＳ等新技术以及分裂抽头等新设计，使器件的时钟速率和主旁瓣比关键技术指标获得了较大的提高，完全满足系统要求     

Low phase noise millimeter-wave frequency sources using InP-basedHBT MMIC technology

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMIC's