di/dt Noise in CMOS Integrated Circuits

This is an overview paper presenting di/dtnoise from a designers perspective. Analysis and circuit designtechniques are presented taking package parasitics into account.The main focus is on digital CMOS design, but analysis and designsuggestions can easily be extended to mixed-mode design.     

Anodic Synthesis of Hierarchical SnS/SnOx Hollow Nanospheres and Their Application for High‐Performance Na‐Ion Batteries

Constructing hollow nanostructures is attractive for both fundamental research and practical applications. However, how to prepare hollow nanostructures in a simple, scalable, and cost‐effective way still remains a great challenge. In this study, for the first time, the anodization technique is applied to construct hollow nanostructures. Specifically, hollow nanospheres of SnS/SnO_x with a hierarchical porous structure are self‐assembled directly on the Sn substrate, via a convenient one‐step anodization method. When applied for sodium‐ion batteries, the thus fabricated SnS/SnO_x hollow nanospheres on the substrate readily serve as a binder‐free electrode, delivering remarkably high cycling stability and rate capability.     

Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes

In this work, a fast approach for the fabrication of hundreds of ultraclean field‐effect transistors (FETs) is introduced, using single‐walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating‐catalyst chemical vapor deposition, which is employed to fabricate high‐performance thin‐film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT‐based FETs exhibit a mean field‐effect mobility, which is 3.3 times higher than that of high‐quality solution‐processed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on–off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT‐based FETs shed light on further study of contamination‐free SWCNTs on various metal contacts and substrates.     

Three-dimensional modeling of removal torque and fracture progression around implants

In the present study, a model for simulations of removal torque experiments was developed using finite element method. The interfacial retention and fracturing of the surrounding material caused by the surface features during torque was analyzed. It was hypothesized that the progression of removal torque and the phases identified in the torque response plot represents sequential fractures at the interface. The 3-dimensional finite element model fairly accurately predicts the torque required to break the fixation of acid-etched implants, and also provides insight to how sequential fractures progress downwards along the implant side.     

Cavitation Bubbles Generated by Vibrating Quartz Tuning Fork in Liquid $$^$$He Close to the $$\lambda $$λ-Transition

We report direct optical observation of cavitation bubbles in liquid helium, both in classical viscous He I and in superfluid He II, close to the \(\lambda \)-transition. Heterogenous cavitation due to the fast-flowing liquid over the rough surface of prongs of a quartz tuning fork oscillating at its fundamental resonant frequency of \(4\,\mathrm {kHz}\) occurs in the form of a cluster of small bubbles rapidly changing its size and position. In accord with previous investigators, we find the cavitation threshold lower in He I than in He II. In He I, the detached bubbles last longer than one camera frame (10 ms), while in He II the cavitation bubbles do not tear off from the surface of the fork up to the highest attainable drive.     

Backstepping approach for design of PID controller with guaranteed performance for micro-air UAV

Flight controllers for micro-air UAVs are generally designed using proportional-integral-derivative (PID) methods, where the tuning of gains is difficult and time-consuming, and performance is not guaranteed. In this paper, we develop a rigorous method based on the sliding mode analysis and nonlinear backstepping to design a PID controller with guaranteed performance. This technique provides the structure and gains for the PID controller, such that a robust and fast response of the UAV (unmanned aerial vehicle) for trajectory tracking is achieved. First, the second-order sliding variable errors are used in a rigorous nonlinear backstepping design to obtain guaranteed performance for the nonlinear UAV dynamics. Then, using a small angle approximation and rigorous geometric manipulations, this nonlinear design is converted into a PID controller whose structure is naturally determined through the backstepping procedure. PID gains that guarantee robust UAV performance are finally computed from the sliding mode gains and from stabilizing gains for tracking error dynamics. We prove that the desired Euler angles of the inner attitude controller loop are related to the dynamics of the outer backstepping tracker loop by inverse kinematics, which provides a seamless connection with existing built-in UAV attitude controllers. We implement the proposed method on actual UAV, and experimental flight tests prove the validity of these algorithms. It is seen that our PID design procedure yields tighter UAV performance than an existing popular PID control technique.     

A 3D Cu-Naphthalene-Phosphonate Metal–Organic Framework with Ultra-High Electrical Conductivity

A conductive phosphonate metal–organic framework (MOF), [{Cu(H₂O)}(2,6-NDPA)_0.5] (NDPA = naphthalenediphosphonic acid), which contains a 2D inorganic building unit (IBU) comprised of a continuous edge-sharing sheet of copper phosphonate polyhedra is reported. The 2D IBUs are connected to each other via polyaromatic 2,6-NDPA's, forming a 3D pillared-layered MOF structure. This MOF, known as TUB40, has a narrow band gap of 1.42 eV, a record high average electrical conductance of 2 × 10² S m⁻¹ at room temperature based on single-crystal conductivity measurements, and an electrical conductance of 142 S m⁻¹ based on a pellet measurement. Density functional theory (DFT) calculations reveal that the conductivity is due to an excitation from the highest occupied molecular orbital on the naphthalene-building unit to the lowest unoccupied molecular orbital on the copper atoms. Temperature-dependent magnetization measurements show that the copper atoms are antiferromagnetically coupled at very low temperatures, which is also confirmed by the DFT calculations. Due to its high conductance and thermal/chemical stability, TUB40 may prove useful as an electrode material in supercapacitors.     

Progress in SIFT‐MS: Breath analysis and other applications

The development of selected ion flow tube mass spectrometry, SIFT‐MS, is described from its inception as the modified very large SIFT instruments used to demonstrate the feasibility of SIFT‐MS as an analytical technique, towards the smaller but bulky transportable instruments and finally to the current smallest Profile 3 instruments that have been located in various places, including hospitals and schools to obtain on‐line breath analyses. The essential physics and engineering principles are discussed, which must be appreciated to design and construct a SIFT‐MS instrument. The versatility and sensitivity of the Profile 3 instrument is illustrated by typical mass spectra obtained using the three precursor ions H₃O⁺, NO⁺ and ${\rm O}_{{\rm 2}}^{{\rm + } \cdot }$ , and the need to account for differential ionic diffusion and mass discrimination in the analytical algorithms is emphasized to obtain accurate trace gas analyses. The performance of the Profile 3 instrument is illustrated by the results of several pilot studies, including (i) on‐line real time quantification of several breath metabolites for cohorts of healthy adults and children, which have provided representative concentration/population distributions, and the comparative analyses of breath exhaled via the mouth and nose that identify systemic and orally‐generated compounds, (ii) the enhancement of breath metabolites by drug ingestion, (iii) the identification of HCN as a marker of Pseudomonas colonization of the airways and (iv) emission of volatile compounds from urine, especially ketone bodies, and from skin. Some very recent developments are discussed, including the quantification of carbon dioxide in breath and the combination of SIFT‐MS with GC and ATD, and their significance. Finally, prospects for future SIFT‐MS developments are alluded to. © 2010 Wiley Periodicals, Inc., Mass Spec Rev 30:236–267, 2011     

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

By pretreating the substrate of a graphene field-effect transistor (G-FET), a stable unipolar transfer characteristic, instead of the typical V-shape ambipolar behavior, has been demonstrated. This behavior is achieved through functionalization of the SiO₂/Si substrate that changes the SiO₂ surface from hydrophilic to hydrophobic, in combination with postdeposition of an Al₂O₃ film by atomic layer deposition (ALD). Consequently, the back-gated G-FET is found to have increased apparent hole mobility and suppressed apparent electron mobility. Furthermore, with addition of a top-gate electrode, the G-FET is in a double-gate configuration with independent top- or back-gate control. The observed difference in mobility is shown to also be dependent on the top-gate bias, with more pronounced effect at higher electric field. Thus, the combination of top and bottom gates allows control of the G-FET’s electron and hole mobilities, i.e., of the transfer behavior. Based on these observations, it is proposed that polar ligands are introduced during the ALD step and, depending on their polarization, result in an apparent increase of the effective hole mobility and an apparent suppressed effective electron mobility.