Design of Smart Sensors Based on the Introduction of Minimal Structural Redundancy

Measurement Techniques - Problems related to the use of measurement systems and the variation of the parameters of measurement systems under the effect of different types of destabilizing factors,...     

Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount

Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm² in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.     

Geomechanical assessment of mining conditions in the Khingansk manganese ore body

The article reports the geomechanical assessment of rockburst-hazardous Khingansk manganese ore body (Poperechny extraction site) at the early stage of development. The researchers accomplished geodynamic zoning of the ore body, analyzed mining-and-geological and mine-technical conditions, and estimated parameters of physico-mechanical properties of host rocks and ore. Using numerical modeling, the stress state of the ore body and enclosing rock mass at various mining stages is assessed, and the bottom part of the Khingansk ore body is considered rockburst-hazardous.     

Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

The luminescence properties of a GaN/Al_0.1Ga_0.9N double heterostructure grown by vapor-phase deposition from organometallic compounds are studied. When luminescence is observed from the end, the radiation intensity shows a sharply defined threshold dependence on the pump density. The threshold excitation density at T=77 K was ∼40 kW/cm² and the wavelength of the stimulated emission was λ=357 nm. The long-wavelength shift of the emission line at high pump densities may be attributed to renormalization of the band gap caused by many-particle interactions in the electron-hole plasma. Pis’ma Zh. Tekh. Fiz. 23, 53–59 (August 12, 1997)     

Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers

Room-temperature photoluminescence (PL) has been studied in AlGaN/GaN superlattices and GaN epitaxial layers implanted with 1-MeV erbium at a dose of 3 × 10¹⁵ cm^?2 and annealed in argon. The intensity of PL from Er³⁺ ions in the superlattices exceeds that for the epitaxial layers at annealing temperatures of 700–1000°C. The strongest difference (by a factor of ～2.8) in PL intensity between the epitaxial layers and the superlattices and the highest PL intensity for the superlattices are observed upon annealing at 900°C. On raising the annealing temperature to 1050°C, the intensity of the erbium emission from the superlattices decreases substantially. This circumstance may be due to their thermal destruction.     

Nanorelief of a GaN surface: The effect of sulfide treatment

Atomic-force microscopy and photoluminescence were used for studying the nanorelief of a (0001)GaN surface treated in sodium-sulfide solutions. The small-scale surface relief of the layer was shown to be largely smoothed after the sulfide treatment.     

Specifics of MOCVD formation of InxGa1−x N inclusions in a GaN matrix

MOCVD-grown heterostructures with one or several In_xGa_1?x N layers in a GaN matrix have been studied by transmission electron microscopy. In heterostructures with thick InGaN layers, a noncoherent system of domains with lateral dimensions (～50 nm) on the order of the layer thickness (～40 nm) is formed. In the case of ultrathin InGaN inclusions, nanodomains coherent with the GaN matrix are formed. The content of indium in nanodomains, determined by the DALI method, is as high as x≈0.6 or more, substantially exceeding the average In concentration. The density of the nanodomains formed in the structures studied is n≈(2–5)×10¹¹ cm^?2. In the structures with ultrathin InGaN inclusions, two characteristic nanodomain sizes are observed (3–6 and 8–15 nm).     

Effect of substructure on the heat resistance of platinum alloys

Conclusions The heat resistance of alloys of metals in the platinum group varies with the character of the dislocation structure and the extent of its completeness, determined by the extent of subcritical plastic deformation and the subsequent annealing temperature; with increasing degrees of subcritical deformation the annealing temperature at which a completely polygonal structure is formed decreases.All-Union Scientific-Research Institute of Plastics and Glass Fibers. I. P. Bardin Central Scientific-Research Institute of Ferrous Metallurgy. Translated from Metallovedenie i Termicheskaya Obrabotka Metallov, No. 9, pp. 54–55, September, 1982.