Reusable and Efficient Polystyrene Immobilized Ionic Liquid Catalyst for Batch and Flow Methylation of Hydroquinone

Catalysis Letters - An environmentally benign process for synthesizing 4-methoxyphenol through methylation of hydroquinone using polystyrene immobilized Bronsted acidic ionic liquid is presented....     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

Drug rationalization: now for the hard part

In 1995 a national drug policy was finalized in Nepal. The authors outline the measures that were recommended for its implementation and the activities that have so far been undertaken. Much remains to be done, most notably in assisting, coordinating and supervising these activities.     

PES News

This paper presents a new method for the generation of a reference voltage for a dynamic voltage restorer (DVR). These voltages, when injected in series with a distribution feeder by a voltage source inverter, can tightly regulate the voltage at the load terminal against imbalance or harmonics in the source side. It is stipulated that the DVR does not supply any real power in the steady state. The reference voltage generation scheme is validated through digital computer simulation studies.     

High yield formation of carbon nanotubes using a rotating cathode in open air

Carbon nanotubes (CNTs) have been synthesized using the arc discharge method with a rotating graphite disc as the cathode. Arcing was carried out in open air and without the use of catalysts. The current density was maintained constant through out the experiment, while, the rate of rotation of the cathode and atmosphere under which arcing was carried out were changed during experimentation. Characterization of the samples produced indicates that rotation of the cathode has a significant impact on the quality and yield of the process. It is proposed that rotation of the cathode drags plasma formed between two electrodes away from high temperature region. This results in a sudden quenching of the reactive plasma. The time available for nucleation and growth phenomena is significantly reduced and thus leads to the formation of highly graphitic multi walled CNTs (yield 60%) and traces of double walled CNTs.