High-power 1.7–1.8 μm single-mode laser diodes

Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-phase epitaxy. High-power single-mode laser diodes of mesastripe design based on these heterostructures operate in a wavelength interval of 1.7–1.8 μm with a maximum continuous room temperature output power of 150 mW. The single-mode lasing regime is maintained up to an output power level of 100 mW.     

SHS of shape memory CuZnAl alloys

Aiming at preparation of shape memory alloys (SMAs), we explored the SHS of Cu_{1 − x} Zn_{1 − y} Al_{1 − z} alloys (0.29 < x < 0.30, 0.74 < y < 0.75, and 0.83 < z < 0.96). The most pronounced shape memory effect was exhibited by the alloys of the following compositions (wt %): (1) Cu(70.6)Zn(25.4)Al(4.0), (2) Cu(70.1)Zn(25.9)Al(4.0), and (3) Cu(69.9)Zn(26.1)Al(4.0). The effect of process parameters on the synthesis of CuZnAl alloys was studied by XRD, optical microscopy, and scanning electron microscopy (SEM). The grain size of CuZnAl was found to depend on the relative amount of the primary CuZn and AlZn phases. Changes in the transformation temperature and heat of transformation are discussed in terms of ignition intensity and compaction. Mechanism of the process depends on the level of the temperature attained relative to the melting point of components. At the melting point of AlZn, the process is controlled by the solid-state diffusion of AlZn into a product layer. The ignition temperature for this system depends on the temperature of the austenite-martensite transformation in CuZnAl alloys. The composition and structure of the products was found to markedly depend on process parameters. The SHS technique has been successfully used to prepare a variety of SMAs.      

Choosing the technology of combined processing of titanium-rare-metal raw materials

The main rules and principles which govern the choice of new variants for chemical technology of combined processing of titanium-rare-metal raw materials are considered. The existing variants of the technology are characterized from the viewpoint of their technological, economical, and ecological efficiency and social importance for a given region. A realistic choice of a technology from a large number of available variants should take into account the entire combination of their advantages and disadvantages The implementation of a rational technological scheme will result in the creation of economically profitable and efficient domestic production satisfying the demands of Russian industry in rare-metal and titanium materials. Directions are noted in which it is expedient to continue studies on designing a rational technology of loparite concentrate or some other concentrate.     

Highly heat-resistant mullite-silicon carbide materials

Cross-linking additions of silicon carbide and waste material from ferroalloy production make it possible to increase the heat-resistance index for mullite-containing refractories. For briquette specimens based on a charge containing aluminum powder it reaches 45 thermal cycles (1300°C – water). Translated from Novye Ogneupory, No. 11, pp. 44–46, November 2008.     

Analysis of an algorithm for solution of conditional optimization problems with linear-fractional objective functions over permutations

A method is considered to solve a conditional optimization problem with a linear-fractional objective function over permutations. The performance of sub algorithms to solve this problem is evaluated. The practical efficiency of the algorithm is analyzed by conducting numerical experiments. __________ Translated from Kibernetika i Sistemnyi Analiz, No. 4, pp. 133–146, July–August 2007.     

Rehabilitation of the radioactively contaminated objects and territory of the Russian Science Center Kurchatov Institute

This article is devoted to work done in 2002–2006 as part of the unified project Reabilitatsiya to rehabilitate radiation hazardous objects and sections of the radioactively contaminated territory of the Russian Science Center Kurchatov Institute. The main objects of the rehabilitation work were old storage sites built for radioactive wastes on the territory of the Institute when military and civilian nuclear technologies were under development. The structural features of the storage sites, including the volumes and characteristics of the wastes stored, are presented. The salient aspects of the disposal sites, taken into account during the rehabilitation work, are discussed. The organization of the rehabilitation operations and the sequence in which they are performed, the special features of the technical design solutions used, the technological methods, and ways for conducting the work are described. __________ Translated from Atomnaya énergiya, Vol. 102, No. 5, pp. 300–306, May, 2007.     

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon

The results of the analysis of variations in the radiative recombination coefficient with varying doping level and concentration of excess electron-hole pairs are reported. It is shown that, along with the effect of narrowing of the band gap calculated in the many-electron approximation, the effect of screening of the Coulomb interaction responsible for the decrease in the excition binding energy should be taken into account. Both effects produce similar trends and decrease the radiative recombination coefficient with increasing levels of doping or injection. The contributions of excitonic radiative recombination and band-to-band radiative recombination to the total radiative recombination coefficient are separated from each other. It is shown that, in the region of room temperature, both contributions are comparable, while at liquid-nitrogen temperature, the excitonic component dominates over the band-to-band component. The results obtained by refined calculations of the limiting value of the internal quantum yield of electroluminescence for the silicon diodes and p-i-n structures are presented. It is shown that the internal quantum yield of electroluminescence can be as high as 14%. However, this values sharply decreases with increasing surface recombination rate and decreasing lifetime of excess charge carriers in the bulk.     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.