Simple material parameter estimation via terahertz time-domain spectroscopy

A simple and precise method based on fixed-point iteration is used to estimate dielectric parameters using terahertz time-domain spectroscopy (THz-TDS). The method converges and gives correct parameters when the sample thickness is greater than 200 /spl mu/m at a frequency of 0.1 THz or 20 /spl mu/m at a frequency of 1.0 THz. The technique in validated using measured terahertz data, obtained by probing a sample of high-resistivity silicon.     

Measurement of the working parameters of an air-post vertical-cavity surface-emitting laser

We present a complete experimental evaluation of the effective parameters necessary to describe the dynamical behavior of an air-post vertical-cavity surface-emitting lasers, on the basis of theoretical equations which are also derived in this paper. The experimental investigation is composed of several steps, including power versus current measurement, noise spectrum analysis, linewidth evaluation. The complete set of parameters derived, in particular the linewidth-enhancement factor and the spontaneous emission factor, is particularly important for accurate comparisons of theoretical models on the laser dynamics with experiments.     

A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV.     

A study on charge reduction in HfO/sub 2/ gate stacks

Charge in metal-organic chemical vapor deposition-grown HfO/sub 2/ gate stacks has been systematically studied using nMOS capacitors. It is found that, for these films, the charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO/sub 2//interfacial layer (IL) interface and positive at the Si/IL interface. In general, the calculated charge densities at both interfaces are of order 10/sup 12/ cm/sup -2/. A forming gas anneal (FGA) reduces both interface charge greatly. The FGA can also significantly reduce the hysteresis and interface state density. The effects of post deposition anneal at various temperatures and under various ambients have also been studied. It is found that a high-temperature dilute oxidizing ambient anneal followed by an FGA reduces the charge at both interfaces.     

Processing techniques for particulate-reinforced metal aluminium matrix composites

The critical need for high strength, lightweight and high stiffness materials has, in recent years, resurrected much interest in discontinuously reinforced powder metallurgy metal matrix composites. These hybrid materials have combined both standard wrought alloys of aluminium and a wide variety of discontinuous reinforcements such as particulates and whiskers of ceramic materials. Renewed interest in these materials as attractive candidates for use in the aerospace and transportation industry has resulted from an attractive and unique combination of physical and mechanical properties, and an ability to offer near isotropic properties coupled with the low cost of these materials when compared with existing monolithic materials. In this paper, the primary processing categories for discontinuously-reinforced metal-matrix composites are highlighted and the salient features of the various techniques in each category are discussed. The variables involved in each processing technique are examined, and the influence of alloy chemistry highlighted. Novel processing techniques for these materials such as the variable co-deposition method is presented as a means to process these novel engineering materials in order to improve their overall mechanical performance.     

Effect of temperature and cyclic heating on the structure and strength of glass textolite

The article established the regularities of change of the physicomechanical characteristics and strength of glass textolites in single and repeated thermal loading. It shows that under multiple loading the intense loss of strength of the investigated materials is due to increased porosity on account of the large number of microcracks appearing in the structure. A correlation is obtained between the elastic and strength characteristics and porosity in dependence on the temperature of multiple heating which in the first approximation is described by a polynomial of second degree with respect to temperature, multiplied by the reciprocal of porosity.Translated from Problemy Prochnosti, No. 6, pp. 53–58, June, 1991.     

Comfort limits for asymmetric thermal radiation

Groups of 32 and 16 subjects of both sexes were exposed in an environmental chamber to radiant asymmetry caused by a cool wall, a warm wall, and a cool ceiling. Each subject was tested individually while seated and clothed at 0.6 clo. During each 3.5-hour experiment the subject was exposed to six radiant temperature asymmetries. He was asked whether and where he experienced any local cool or warm sensation, and whether it was felt to be uncomfortable. During the entire experiment he was kept thermally neutral by changing the air temperature according to his wishes.For cool walls, warm walls, and cool ceilings curves have been established showing the percentage of dissatisfied subjects as a function of the radiant asymmetry. Radiant asymmetry at a warm wall caused less discomfort than a cool wall. A cool ceiling caused less discomfort than a warm ceiling. Accepting that 5% of the subjects may feel uncomfortable. a radiant temperature asymmetry of 10°C is allowable at a cool wall, 23°C at a warm wall, and 14°C under a cool ceiling. A previous study showed that 4°C is allowable under a warm ceiling. Radiant asymmetry had no significant impact on the operative temperatures preferred by the subjects. No significant differences were observed between the responses of men and women exposed to radiant asymmetry.     

The microstructures of laser-alloyed Ni-Ta surface layers

Evaporated thin tantalum films on single and polycrystalline nickel have been laser surface alloyed using either continuous-wave CO₂ or Q-switched Nd-YAG radiation. In the case of the continuous-wave laser, surface alloys contain amorphous tantalum-rich regions, intermediate polycrystalline bands of TaNi, and an underlying Ni(Ta) solid solution. In the Q-switched laser case, a much more laterally uniform amorphous phase with approximately equal atomic fractions of nickel and tantalum is found, with little evidence of polycrystalline intermetallics.In situ annealing with the electron beam of the microscope results in formation of microcrystallites, predominantly nickel.     

Extremely low-loss 1.5%-/spl Delta/ 32-channel athermal arrayed-waveguide grating multi/demultiplexer

A silica-based 1.5%-/spl Delta/ 100 GHz-spacing 32-channel athermal arrayed-waveguide grating (AWG) with compact size and extremely low insertion loss is described. By reducing the fibre coupling loss and the excess loss in a silicone-filled groove, an insertion loss of 1.3 dB was achieved with this athermal AWG.     

Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels.