Electron diffraction study of flake graphite extracted from molten pig iron

Single graphite flakes segregated from molten carbon or silicon-rich iron at 1200° to 1500°C were subjected to electron diffraction experiments. The results indicated that the well developed thick flakes are composed of one single crystal, while the thin almost colorless flakes consist of two or three single crystals oriented with the basal plane parallel to the flake surface and rotated at an angle of 15°, 18°, 22°, 25° or 28° about the C-axis. The stacking of the atomic layers in each single crystal indicates that they are α and β-type, or a more disordered structure, at each instant. Double diffraction evidence and additional electron microdiffraction observations showed that the thin single flake has an aggregate structure with two close-packed single crystals.     

Numerical simulation on the behavior of a liquid jet into an air flow

A numerical simulation has been performed to clarify the effects of turbulence in a liquid on the deformation of the liquid jet surface into an air flow. The turbulences in the liquid jet were simulated by the Rankin vortices, and the liquid jet surface was tracked numerically by the volume of fluid method. By numerical simulations, the onset of the protrusions on the liquid jet surface is caused by the vortices in the liquid, and the surrounding air flow plays an important role in the amplification of the protrusions. The amplification rate of the trough displacement is proportional to the air‐to‐liquid velocity ratio. At large imposed vortex intensities, the trough displacement increases with the vortex intensity. On the other hand, at small imposed vortex intensities, the amplification of the trough displacement is also affected by factors other than vortex intensity. © 2001 Scripta Technica, Heat Trans Asian Res, 30(6): 473–484, 2001     

Health-monitoring technologies for alumina-fiber-reinforced plastics

Transmitted light could detect matrix cracks that occurred in the early stages of fracture of alumina-fiber-reinforced plastics (alumina-FRPs); these cracks could not be detected by acoustic emission (AE). An optical-fiber Bragg grating (FBG) sensor could detect the matrix cracks but it must be embedded in the FRPs. To determine which wavelength is sensitive to the defects in the FRP, the spectra of the transmitted and reflected light were measured. The intensity of the transmitted light, especially in the visible region (wavelength: 400–800 nm), decreased as the bending stiffness of the test piece decreased. It is thus concluded that to monitor the decrease in bending stiffness of FRPs, a simple sensor using a visible ray is good enough. And this transmitted-light NDE technique can work in the strong electromagentic field associated with a superconductor. It will therefore be useful for detecting defects in the FRP of the load-support system in service.     

Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding

This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices.     

Dendrite growth processes of silicon and germanium from highly undercooled melts

The crystal growth behavior of a semiconductor from a very highly undercooled melt is expected to be different from that of a metal. In the present experiment, highly pure undoped Si and Ge were undercooled by an electromagnetic levitation method, and their crystal growth velocities (V) were measured as a function of undercooling (ΔT). The value of V increased with ΔT, and V=26 m/s was observed at ΔT=260 K for Si. This result corresponds well with the predicted value based on the dendrite growth theory. The growth behaviors of Si and Ge were found to be thermally controlled in the measured range of undercooling. The microstructures of samples solidified from undercooled liquid were investigated, and the amount of dendrites immediately after recalescence increased with undercooling. The dendrite growth was also observed by a high-speed camera.     

Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films—Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing

A high-pressure annealing was applied to a post-annealing process for sol-gel derived PZT thin films. The squareness of D-E hysteresis curves changes depending on both total pressure and oxygen concentration. Moreover, the change follows the product of the total pressure and the oxygen concentration, which correspond to oxygen partial pressure P_O2. Where the P_O2 is higher than 0.03 MPa, few of the squareness of the hysteresis curve are excellent. The squareness of the hysteresis curves dramatically improve as the P_O2 decreases. Where the P_O2 is lower than 0.01 MPa, the squareness deteriorates slightly. These changes in the D-E hysteresis curves are thought to be explained by the generation of lead and oxygen vacancies as a function of the P_O2.     

Neuroblastoma in an adult with a high serum level of carbohydrate antigen, CA125: report of a case

OBJECTIVE: The clinical characteristics and outcomes of endometrial cancer patients 45 years of age and younger were compared with those of patients older than 45 years of age. METHODS: We performed a cross-sectional study of 301 consecutive endometrial cancer patients referred to our center from 1989 to 1994. Of the 289 patients eligible for study, 40 were 45 years of age or younger (group A) and 249 were older than 45 years of age (group B). RESULTS: The majority of patients in both groups presented with stage I disease. Of the women with stage I disease, patients in group A were more likely than those in group B to have low-grade disease localized to the endometrium (P < .001; relative prevalence 3.39; confidence interval [CI] 1.88, 6.12). However, the distribution of stages I to IV overall was the same for the two groups (P = .269). Although univariate analysis revealed that 11% of the patients in group A and 2% in group B had synchronous ovarian malignancies (P = .007; relative prevalence 5.42; CI 1.39, 21.14), multivariate logistic regression found that nulliparity, not age, was an independent risk factor for synchronous ovarian malignancy (P = .017; relative prevalence 6.15; CI 1.52, 25.61). There were no statistically significant differences by age in the prevalence of high-risk endometrial histology (serous and clear cell carcinoma) or in survival. CONCLUSION: The overall distribution of tumor stage and survival were the same for the younger and older women; this finding contradicts previous reports that suggest that young women with endometrial cancer are at lower risk. Additionally, nulliparity, which occurs with a higher prevalence in younger women who develop endometrial cancer, is associated statistically with the development of synchronous ovarian malignancies.     

6-in diameter InP single crystals grown by the hot-wall LEC method and the mirror wafers

6-in diameter Fe-doped semi-insulating InP single crystals have been grown by the hot-wall liquid encapsulated Czochralski method. This method has a quartz inner vessel to stabilize the thermal convection. Temperature gradient and solid-liquid interface shape can be controlled by a multizone heater system. The weight of grown crystal was 18 kg and the full length was 250 mm. The dislocation density was about 1/spl times/10/sup 5/ cm/sup -2/. The resistivity was more than 1/spl times/10/sup 7/ /spl Omega/cm and its uniformity was the same as the smaller diameter crystal. The conditions of wafer processing were optimized to improve the wafer flatness. The rolloff and the slope of the wafer surface could be reduced especially by the improvement of the polishing conditions. The typical total thickness variation was 3.3 /spl mu/m, and it was comparable to the GaAs wafer.