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991.
The two photon absorption (TPA) process is currently used to write high resolution microstructures for a variety of applications. Key parameters required to predict the final structure formation for this process are experimentally determined and reported in this article for two commercially available resists, Ormocore and SU-8. The measured TPA coefficients measured at 800 nm for Ormocore and SU-8 are 27 ± 6 and 28 ± 6 cm TW−1, respectively. For Ormocore and SU-8 the dose required to write 35 and 50 μm high structures, respectively, were 54 ± 8 and 3.5 ± 0.5 J cm−3, respectively, and the measured contrasts were 15 ± 2 μm per decade J−1 cm3 and 55 ± 8 μm per decade J−1 cm3, respectively.  相似文献   
992.
Physical insights on electron mobility in contemporary FinFETs   总被引:1,自引:0,他引:1  
Calibration of a physics/process-based model for double-gate (DG) MOSFETs to contemporary nanoscale undoped n-channel DG FinFETs reveals that 1) significant densities of source/drain donor dopants readily diffuse to the ultrathin (fin) body/channel, even with relatively long fin extensions, degrading electron mobility at low/moderate levels of inversion-carrier density (N/sub inv/), 2) surface-roughness scattering of electrons is less severe at the {110} silicon-fin surfaces than anticipated, and 3) strong-inversion electron mobility is quite high (e.g., /spl cong/290 cm/sup 2//V/spl middot/s at N/sub inv/=10/sup 13/ cm/sup -2/), being about three times higher than that in contemporary bulk-Si MOSFETs.  相似文献   
993.
Multimedia Tools and Applications - Self-confidence is one’s own belief of success with respect to a specific task. Cognitive tasks like decision making, problem solving etc. are influenced a...  相似文献   
994.
This paper determines an optimum production schedule and raw material ordering policy for a family of products that share a common piece of production facility, and the inventory operates under a shelf life constraint. The problem of manufacturing a family of products under shelf life is addressed here mainly under three major issues: adjusted production rate, adjusted cycle time, and simultaneous adjustment of production rate and cycle time. This research addressed the issues in two major parts: the first part comprises planning an optimum production schedule and material ordering policy for a family of products with a constant production cost for operating the machines. The second part of the research considers a generalized production cost of operation where the cost of operation may increase or decrease depending on the production system. Results are demonstrated to show the computational mechanics and incremental advantages over the other models. A sensitivity analysis is performed to study the effect of variability of some parameters that play important roles in the models. An empirical test has also been conducted to show the relative performance of the models.  相似文献   
995.
Landslide hazard assessment: summary review and new perspectives   总被引:65,自引:4,他引:65  
This paper deals with several aspects of the assessment of hazard and risk of landsliding. In recent years the interest in this topic has increased greatly and there are many technical papers dealing with this subject in the literature. This article presents a summary review and a classification of the main approaches that have been developed world-wide. The first step is the subdivision between qualitative and quantitative methods. The first group is mainly based on the site-specific experience of experts with the susceptibility/hazard determined directly in the field or by combining different index maps. The approaches of the second group are formally more rigorous. It is possible to distinguish between statistical analyses (bivariate or multivariate) and deterministic methods that involve the analysis of specific sites or slopes based on geo-engineering models. Such analyses can be deterministic or probabilistic. Among the quantitative methods discussed is the Neural Networks approach which has only recently been applied to engineering geology problems. Finally several considerations concerning the concept of acceptable risk and risk management are presented. Received: 30 November 1998 · Accepted: 2 April 1999  相似文献   
996.
Ultra smooth nanostructured diamond (USND) coatings were deposited by microwave plasma chemical vapor deposition (MPCVD) technique using He/H2/CH4/N2 gas mixture. The RMS surface roughness as low as 4 nm (2 micron square area) and grain size of 5–6 nm diamond coatings were achieved on medical grade titanium alloy. Previously it was demonstrated that the C2 species in the plasma is responsible for the production of nanocrystalline diamond coatings in the Ar/H2/CH4 gas mixture. In this work we have found that CN species is responsible for the production of USND coatings in He/H2/CH4/N2 plasma. It was found that diamond coatings deposited with higher CN species concentration (normalized by Balmer Hα line) in the plasma produced smoother and highly nanostructured diamond coatings. The correlation between CN/Hα ratios with the coating roughness and grain size were also confirmed with different set of gas flows/ plasma parameters. It is suggested that the presence of CN species could be responsible for producing nanocrystallinity in the growth of USND coatings using He/H2/CH4/N2 gas mixture. The RMS roughness of 4 nm and grain size of 5–6 nm were calculated from the deposited diamond coatings using the gas mixture which produced the highest CN/Hα species in the plasma. Wear tests were performed on the OrthoPOD®, a six station pin-on-disk apparatus with ultra-high molecular weight polyethylene (UHMWPE) pins articulating on USND disks and CoCrMo alloy disk. Wear of the UHMWPE was found to be lower for the polyethylene on USND than that of polyethylene on CoCrMo alloy.  相似文献   
997.
    
An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region(DDR) impact avalanche transit time(IMPATT) devices operating at both millimetre-wave(mm-wave) and terahertz(THz) frequencies. A rigorous large-signal(L-S) simulation based on the non-sinusoidal voltage excitation(NSVE) model developed earlier by the authors is used in this study. At first,a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulationresultsshowthattheDDRdiamondIMPATTdevicedeliversapeakRFpowerof7.79Wwithan18.17%conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to6.19mWand8.17%respectively,taking50%voltagemodulation.AcomparativestudyofDDRIMPATTsbasedon diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.  相似文献   
998.
    
Ultra-wide bandgap semiconductor AlGaN is a promising candidate for high-power and high-frequency electronics. AlGaN-heterostructures with nitrogen (N)-polarity can offer added benefits of low-leakage and large drive current. However, electro-thermal transport in such heterostructures remains unexplored, although they are essential for electronic device functionality. Here, the thermal and electrical properties of N-polar AlxGa1-xN-channel heterostructures (Al percentage, x = 15–90%) are explored and compared with their GaN counterpart. The thermal measurements uncover that the effective thermal resistance of the thin channel and barrier layers are similar in magnitudes for N-polar- AlGaN and GaN heterostructures, however, the total effective thermal conductivity in N-polar AlGaN heterostructure is ≈4× smaller. This reduction originates from the larger thermal resistance of the thick Al0.15Ga0.85N buffer layer within the AlGaN stack. N-polar AlxGa1-xN stack displays a thermal conductivity almost independent of temperature, measured from room temperature up to 200 °C. Hall measurements of an N-polar Al0.30Ga0.70N-channel heterostructure further reveal that electrical properties such as resistivity, carrier density, and mobility remain nearly unchanged with temperature, indicating the dominance of alloy-phonon scattering in such material systems. These results offer important insights into material-device co-design and reliability of N-polar AlGaN heterostructures.  相似文献   
999.
1000.
    
ABSTRACT: Minced goat meat (Black Bengal variety) was stored aerobically and refrigerated at 4°C for 15 d after washing with hot water followed by different combination pretreatments including acetic acid-glucose, a curing mixture, and tea liquor and honey mixture. It was observed that pretreated samples exhibited better physicochemical (pH, water-holding capacity, thiobarbutyric acid value, and extract release volume), sensory, and microbial characteristics compared with the control goat meat samples, which were not washed and pretreated ( P < 0.05). Microbial characterization of goat meat samples was evaluated with respect to aerobic bacterial, yeast, and mold growth during its storage. Microbial growth characteristics were modeled by 2 nonlinear regression models of sigmoidal functions, specifically, a logistic equation and modified Gompertz equation. In this study, the modified Gompertz equation was found to be more suitable to explain the microbial growth characteristics. Tea liquor and honey pretreatment was most effective in controlling aerobic bacterial growth, whereas acetic acid-glucose pretreatment was most effective in controlling yeast and mold growth. Storage life of pretreated samples was >15 d, whereas storage life of the control sample was <5 d.  相似文献   
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