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981.
PGE2 is one of the key molecules in the osteoblast. It is the major prostanoid in the bone, and its production is under the control of both systemic and local factors. PGE2 has been reported to have multiple actions in the osteoblast, such as growth promotion and cell differentiation. To better understand the action of PGE2 in the osteoblast, we determined the PGE receptor subtypes in MC3T3-E1, an osteoblastic cell line derived from the normal mouse calvaria. Northern blot analysis revealed that EP1 and EP4 subtypes are expressed in MC3T3-E1. In contrast, EP3 subtype was not detected by either Northern blot analysis or RT-PCR. The contribution of each subtype was evaluated by studying the effects of subtype-specific analogs on osteoblastic function at confluency and 5 days after confluency. An EP1 agonist, 17-phenyl-omega-trinor PGE2, increased DNA synthesis and decreased alkaline phosphatase activity. 11-Deoxy-PGE1, and EP2 and EP4 agonist, decreased DNA synthesis and increased alkaline phosphatase activity at both stages. Butaprost, an EP2-selective agonist, showed effects similar to those of 11-deoxy-PGE1 only at confluency. Another and more differentiated osteoblastic marker, osteocalcin production, was detectable and was stimulated by 11-deoxy-PGE1 only 5 days after confluency. The exposure of these cells to EP1 agonist changed the cell shape to a more fibroblastic appearance. These results indicate that EP1, EP4, and probably EP2 are present in MC3T3-E1 cells; EP1 promotes cell growth, and EP2 and EP4 mediate differentiation of the osteoblast. Furthermore, the decreased response to EP2-specific agonist 5 days after confluency suggests that the expression of PGE receptor subtype is dependent on the stage of osteoblastic differentiation. This is the first report to determine PGE receptor subtypes in the bone.  相似文献   
982.
InxGa1−xAs (x=0.25–0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher after a brief anneal at 600°C. High-resolution transmission electron microscopy shows all the as-grown epilayers to be heavily dislocated due to the large lattice mismatch (2–3%). When the layers are annealed, in addition to the dislocations, precipitates are also generally observed. As with LT-GaAs, the lifetime shortens as growth temperature is reduced through the range 300–120°C; also, the lifetime in LT-InxGa1−xAs is generally shorter in as-grown samples relative to annealed samples. Metal-semiconductor-metal photodetectors fabricated on the material exhibit response times of 1–2 picoseconds, comparable to results reported on GaAs grown at low temperature, and the fastest ever reported in the wavelength range of 1.0–1.3 μm.  相似文献   
983.
For pt.I see IEEE Trans. Neural Networks, vol.1, p.167-78 (1990). Parallel, self-organizing, hierarchical neural networks (PSHNNs) involve a number of stages with error detection at the end of each stage, i.e., rejection of error-causing vectors, which are then fed into the next stage after a nonlinear transformation. The stages operate in parallel during testing. Statistical properties and the mechanisms of vector rejection of the PSHNN are discussed in comparison to the maximum likelihood method and the backpropagation network. The PSHNN is highly fault tolerant and robust against errors in the weight values due to the adjustment of the error detection bounds to compensate errors in the weight values. These properties are exploited to develop architectures for programmable implementations in which the programmable parts are reduced to on-off or bipolar switching operations for bulk computations and attenuators for pointwise operations  相似文献   
984.
An analysis of a wide rectangular radiating slot excited by a microstrip line is described. Coupled integral equations are formulated to find the electric current distribution on the feed line and the electric field in the aperture. The solution is based on the method of moments and using the space domain Sommerfeld-type Green's function. The information about the input impedance or reflection coefficient is extracted from the electric current distribution on the microstrip line utilizing the matrix pencil technique. The theoretical analysis is described and data are presented and compared with other theoretical and experimental results  相似文献   
985.
Call admission control schemes: a review   总被引:11,自引:0,他引:11  
Over the last few years, a substantial number of call admission control (CAC) schemes have been proposed for ATM networks. We review the salient features of some of these algorithms. Also, we quantitatively compare the performance of three of these schemes  相似文献   
986.
A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage Vd considerably less than the Si/SiO2 injection barrier height φb. Simulation of both devices reveal that 1) although qVdb, carriers can obtain energies greater than φb, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates  相似文献   
987.
An attempt is made to elucidate the electrochemical aspects of the electroosmotic dewatering (EOD) of clays as reported in some recent work, especially that on interrupted DC power electroosmotic dewatering published by Rabie, Mujumdar and Weber (2). These authors showed that the dewatering by EOD stops after the DC power has been on for several minutes or hours; on interruption of their power and on short-circuiting of the electrodes, conditions can be created again for some further dewatering by DC power EOD. This discovery, of Rabie et al. is interpreted as a fuel cell effect and it is shown that it affords clues to several other electrochemical strategies for the possible enhancement of the efficiency of the EOD by DC power.

Further, the open circuit potentials observed by Rabie et al. (2) on the interruption of DC power are given an electrochemical interpretation which leads to quantitative estimates in agreement with the experimental values.  相似文献   
988.
Solidification of aluminum oxide from undercooled melts was investigated in containerless experiments. Specimens were levitated in a gas jet, stabilized with an acoustic positioning device, and melted with cw CO2 laser beams. Cooling curves were obtained by optical pyrometry when the laser intensity was reduced. The materials examined were high-purity Verneuil sapphire, 99.5% polycrystalline alumina, and oxide materials recovered from the effluent of an aluminum-fueled rocket motor. The degree of undercooling, the apparent temperature behavior during the thermal arrest on solidification, and the structure of the materials formed were different in argon and oxygen atmospheres. Undercooling of the sapphire and alumina materials was 360 ± 10 K in an oxygen atmosphere and approximately 450 K in argon. Melting and solidification of high-purity sapphire resulted in a dendritic and porous polycrystalline material in oxygen. Dense, larger crystals were obtained in argon. Products formed from 99.5% alumina were discolored and the cores were white, indicating impurity segregation effects. More reproducible behavior was observed for the sapphire and 99.5% alumina than for the tungstencontaminated rocket motor effluent materials.  相似文献   
989.
Safety, local and systemic immunomodulation, and tumor response to treatment with aerosolized natural interleukin 2 (nIL-2) applied five times a day were studied in a Phase I trial in 16 patients with pulmonary malignancies refractory to conventional therapy. The toxicity of inhaled nIL-2 was different from that observed after systemic administration. Reversible airway irritation causing a nonproductive cough represented the dose-limiting toxicity. Mild to moderate reduction of the vital capacity and forced expiratory volume (FEV1) with minor effects on relative FEV1, peak expiratory flow, airway resistance, and PaO2 was experienced by individual patients. In 14 patients suffering from pulmonary metastases due to renal cell cancer, one durable complete response, one partial response, and one mixed response were observed. Inhalation of nIL-2 aerosol resulted in a dose-dependent expansion of pulmonary immunocompetent cells in bronchoalveolar lavage fluid. Posttreatment bronchoalveolar lavage showed an activated lymphocyte phenotype with increased HLA-DR expression. The only systemic biological effect detectable in peripheral blood was a marked increase of soluble interleukin 2 receptor serum levels. We conclude that treatment with aerosolized nIL-2 is an effective means for site-specific immunomodulation and deserves further investigation for the treatment of malignant and inflammatory lung disease.  相似文献   
990.
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