"JDS-音频化渣微机综合检测系统"的应用与效果

简要介绍“JDS-音频化渣微机综合检测系统”的工作原理和应用效果，证明使用该装置是提高炼钢操作水平的一条较好途径。     

Decentralized control design for large-scale systems with strong interconnections using neural networks

We propose a decentralized neural network (NN) controller for a class of large-scale nonlinear systems with the strong interconnections. The NNs are used to approximate the unknown subsystems and interconnections. Due to the functional approximation capabilities of NNs, the additional precautions are not required to be made for avoiding the possible control singularity problems. Semiglobal asymptotic stability results are obtained and the tracking error converges to zero. Furthermore, the issue of transient performance of the subsystems is also addressed under an analytical framework.     

Long-term progression in chronic manganism: ten years of follow-up

We studied the long-term clinical course of five patients with chronic manganese intoxication. The mean scores of the King's College Hospital Rating Scale for Parkinson's disease increased from 15.0 +/- 4.2 in 1987 to 28.3 +/- 6.70 in 1991 and then to 38.1 +/- 12.9 in 1995. The deterioration was most prominent in gait, rigidity, speed of foot tapping, and writing. Tissue concentrations of manganese in blood, urine, scalp hair, and pubic hair returned to normal. Follow-up MRIs did not show paramagnetic high-signal intensity on T1-weighted images. The data indicate that clinical progression in patients with manganese parkinsonism continues even 10 years after cessation of exposure.     

大型离心复合球墨铸铁轧辊的生产

简述了我公司为舞阳铜厂试制４２００ｍｍ厚板轧机离心复合球墨铸铁轧辊的性能要求、内外层双重金属铸造工艺参数的选择及整个铸造生产工艺过程。     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

Ti－15－3合金的性能数据

研究了可冷成形的Ｔｉ－１５－３高强钛合金两种时效制度的全面力学性能，为该合金的扩大应用提供了依据。