Solutions to a combined problem of excessive hydrogen sulfide in biogas and struvite scaling.

The Woodman Point Wastewater Treatment Plant (WWTP) in Western Australia has experienced two separate problems causing avoidable maintenance costs: the build-up of massive struvite (MgNH4PO4. 6H2O) scaling downstream of the anaerobic digester and the formation of hydrogen sulfide (H2S) levels in the digester gas to levels that compromised gas engine operation and caused high operating costs on the gas scrubber. As both problems hang together with a chemical imbalance in the anaerobic digester, we decided to investigate whether both problems could be (feasibly and economically) addressed by a common solution (such as dosing of iron solutions to precipitate both sulfide and phosphate), or by using separate approaches. Laboratory results showed that, the hydrogen sulfide emission in digesters could be effectively and economically controlled by the addition of iron dosing. Slightly higher than the theoretical value of 1.5 mol of FeCl3 was required to precipitate 1 mol of dissolved sulfide inside the digester. Due to the high concentration of PO4(3-) in the digested sludge liquor, significantly higher iron is required for struvite precipitation. Iron dosing did not appear an economic solution for struvite control via iron phosphate formation. By taking advantage of the natural tendency of struvite formation in the digester liquid, it is possible to reduce the risk of struvite precipitation in and around the sludge-dewatering centrifuge by increasing the pH to precipitate struvite out before passing through the centrifuge. However, as the Mg2+/PO4(3-) molar ratio in digested sludge was low, by increasing the pH alone (using NaOH) the precipitation of PO4(3-) was limited by the amount of cations (Ca2+ and Mg2+) available in the sludge. Although this would reduce struvite precipitation in the centrifuge, it could not significantly reduce PO4(3-) recycling back to the plant. For long-term operation, maximum PO4(3-) reduction should be the ultimate aim to minimise PO4(3-) accumulation in the plant. Magnesium hydroxide liquid (MHL) was found to be the most cost-effective chemical to achieve this goal. It enhanced struvite precipitation from both, digested sludge and centrate to the point where more than 95% PO4(3-) reduction in the digested sludge was achieved.     

LD端面抽运掺Yb3+双包层光纤激光器自脉动行为的实验研究

本文对连续波半导体激光器端面抽运的Fabry-Perot腔掺Yb3 双包层光纤激光器的自脉动输出行为进行了研究．发现低Q值腔光纤激光器具有两种形式的自脉动输出，一种是饱和吸收被动调Q产生的自脉冲,另一种是与光纤中的受激Raman散射(SRS)效应相对应的阵发性巨脉冲．通过提高光纤激光器谐振腔的Q值并选择合适的抽运功率，可以有效地减小输出功率的自脉动，获得稳定的连续波激光输出．     

了解您的管理跨度--科研项目管理方法探索

概要介绍了科学的管理技术——项目管理方法，讨论了管理跨度在项目管理中的重要性，并推荐了如何了解管理跨度的方法。     

掺杂聚苯胺导电膜的制备及对核设施表面铀的去污

制备了掺杂导电聚苯胺可剥离膜，首次采用涂膜、电解联用去污方法，进行涂膜电解去除渗透到核设施金属材料内部形成氧化物的铀。在膜中，聚苯胺、盐酸、EDTA-2Na含量各为4％、0．5％～1%、1％；电解电压2．3V、电解时间25min～30min时，其去污率可达99％，优于其它的方法。     

Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application

A new process for solid phase crystallization (SPC) of amorphous silicon (a-Si) using thin film heater is reported. With this localized Ti silicide thin film heater, we successfully crystallized 500 Å-thick a-Si in a few minutes without any thermal deformation of glass substrate. The size of crystallized silicon grain was abnormally big (30-40 μm). Polycrystalline thin film transistors (TFT) fabricated using this unique thin film heater showed better mobility than those of conventional ones by furnace annealing.     

Inhibition effect of carbon dioxide on the oxidation of hydrogen over a platinum foil catalyst

This paper investigates the catalytic ignition of the H₂/O₂/CO₂ mixture on platinum in a stagnation flow at atmospheric pressure experimentally and numerically. We measure the ignition temperatures of the gas mixtures flowing towards resistively heated platinum with various composition ratios and various diluent gases of N₂, Ar and CO₂. Compared with N₂ or Ar, the CO₂ dilution shows higher ignition temperature by about 50 K, even at the same composition ratio. The ignition temperature increase is proportional to the dilution ratio. Through the numerical simulation, it is illustrated that higher ignition temperature is caused by the adsorption of CO₂ and following dissociation on platinum surface, which was to date considered negligible in catalytic combustion.     

重复压裂气井产能模拟研究

由于重复压裂气井原有裂缝的失效程度难以评价。导致重复压裂气井的产能预测常常有很大的误差。为此，根据重复压裂气井的压前产量和舍水率，拟合了原有裂缝的有效率，在考虑新裂缝和原有裂缝共同作用的情况下，建立了气、水两相平面二维的裂缝-油藏数学模型，通过对模型的数值求解，对重复压裂气井进行了产能评价。研究表明，在考虑新、老裂缝共同作用下的产能评价方法，能更为准确地预测重复压裂后的生产动态情况，对压裂时机的确定、压后经济效益的预测都具有重要的指导意义。     

A New Approach for Built‐in Self‐Test of 4.5 to 5.5 GHz Low‐Noise Amplifiers

This paper presents a low‐cost RF parameter estimation technique using a new RF built‐in self‐test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using 0.18 μm SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.     

General expression for pdf of a sum of independent exponential random variables

In order to evaluate exactly the performance of some diversity schemes, the probability density function (pdf) of a sum of independent exponential random variables (r.v.'s) must be known. This paper proposes a simple method to find it by using characteristic function., The resultant pdf is successfully applied to formulate the closed-form BER expression of 2 Tx-J Rx transmit diversity as well as the outage probability of repetition coding.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.