Methanation of CO2 with the oxygen-deficient Ni(II)-ferrite under dynamic conditions

The continuous methanation of CO₂ has been accomplished over hydrogen-reduced Ni(II)-bearing ferrite (Ni_xFe_3–xO_4–; x=0.39, > 0) in a mixed gas flow of CO₂ and H₂ at 250–375 °C. The yield and the selectivity for the methanation were larger than 50% and 95%, respectively, at the initial stage of the process. They decreased to 31% and 89%, respectively, after 6 h methanation. The innovative results can be ascribed to the use of the new material; hydrogen-reduced Ni(II)-bearing ferrite. Its formation was evinced by chemical analyses and the increase in the lattice constant; the lattice constant of the Ni(II)-bearing ferrite (a₀ 0.8375 nm) was enlarged to 0.8379 nm by hydrogen reduction. The enlarged lattice constant was not changed during the methanation. These findings suggest that the methanation occurs at the oxygen-deficient site of the hydrogen-reduced Ni(II)-bearing ferrite, as well as the formation of water by combination of the incorporated oxygens with hydrogen. The methanation consists of three steps of the elementary reaction. First, the oxygen-deficient sites are formed by hydrogen reduction; second, CO₂ is reduced to elementary carbon and two oxygen ions which are incorporated into the oxygen-deficient sites; and third, the carbon deposited on the surface of the reduced ferrite is selectively hydrogenated to CH₄.     

Out‐of‐Plane Strain Induced in a Moiré Superstructure of Monolayer MoS2 and MoSe2 on Au(111)

Making contact of transition metal dichalcogenides (TMDCs) with a metal surface is essential for fabricating and designing electronic devices and catalytic systems. It also generates strain in the TMDCs that plays significant role in both electronic and phonon structures. Therefore, detailed understanding of mechanism of the strain generation is important to fully comprehend the modulation effect for the electronic and phonon properties. Here, MoS₂ and MoSe₂ monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out‐of‐plane strain in both MoS₂ and MoSe₂ layers, whereas no strain generation is observed on polycrystalline Au or SiO₂/Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the S? Mo? S (Se? Mo? Se) structure and Au atoms via unique moiré superstructure formation for MoS₂ and MoSe₂ layers on Au(111). This observation indicates that the specific adsorption sites give rise to out‐of‐plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS₂ or MoSe₂ layer.     

Moiré‐reduction methods for integral videography autostereoscopic display with color‐filter LCD

Abstract— Moiré‐reduction methods for integral videography displays are proposed. Integral videography is based on the principles of integral photography and extended real‐time video processing. There are two moiré‐reduction methods that can be used for integral videography displays that have a lens array and a liquid‐crystal display. The first is color moiré, and the second is intensity moiré. To reduce color moiré, an optimized color‐filter layout in the liquid‐crystal display was used. To reduce intensity moiré, a defocusing method was used. Adesign of a viewing area for the integral videography display is also presented. To control the viewing area, the lens pitch and the shape of the integral videography elemental image was changed. A 5‐in. integral videography display was implemented by using the proposed methods, and an integral videography display was evaluated.     

New pixel driving circuit using self‐discharging compensation method for high‐resolution OLED micro displays on a silicon backplane

A new 4T2C pixel circuit formed on a silicon substrate is proposed to realize a high‐resolution 7.8‐μm pixel pitch AMOLED microdisplay. In order to achieve high luminance uniformity, the pixel circuit compensates its Vth variation of the MOSFET for the driving transistor internally by using self‐discharging method. Also presented are 0.5‐in Quad‐VGA and 1.25‐in wide Quad‐XGA microdisplays with the proposed pixel circuit.     

Toward Optimal Space Partitioning for Unbiased,Adaptive Free Path Sampling of Inhomogeneous Participating Media

Photo‐realistic rendering of inhomogeneous participating media with light scattering in consideration is important in computer graphics, and is typically computed using Monte Carlo based methods. The key technique in such methods is the free path sampling, which is used for determining the distance (free path) between successive scattering events. Recently, it has been shown that efficient and unbiased free path sampling methods can be constructed based on Woodcock tracking. The key concept for improving the efficiency is to utilize space partitioning (e.g., kd‐tree or uniform grid), and a better space partitioning scheme is important for better sampling efficiency. Thus, an estimation framework for investigating the gain in sampling efficiency is important for determining how to partition the space. However, currently, there is no estimation framework that works in 3D space. In this paper, we propose a new estimation framework to overcome this problem. Using our framework, we can analytically estimate the sampling efficiency for any typical partitioned space. Conversely, we can also use this estimation framework for determining the optimal space partitioning. As an application, we show that new space partitioning schemes can be constructed using our estimation framework. Moreover, we show that the differences in the performances using different schemes can be predicted fairly well using our estimation framework.     

Output intersampling approach to direct closed-loop identification

A new direct closed-loop identification method, which uses the output intersampling technique, is proposed in this note. By using the intersampled plant input-output data, the proposed method removes the traditional restrictive identifiability condition, and does not require an external persistently exciting (PE) test signal     

Increase in the amount of erythrocyte delta-aminolevulinic acid dehydratase in workers with moderate lead exposure

This report summarizes our current understanding of the heavy chain haplotypes found in our laboratories' rabbits. Independently derived data from several laboratories have been synthesizes into a consistent picture of the linked inheritance of allotypic markers found on the different heavy chain classes and subclasses of rabbit immunoglobulins in pedigreed rabbits, including the families of three apparent VH-CH recombinants. In one recombinant, the entire group of CH markers (C mu, C gamma, and C alpha) recombined with the set of VH. Although in the other two recombinants all CH markers may also have recombined as a group, in one of these only IgG and IgA CH genes were informative; in the other recombinant, only the IgG allotypes were informative. Some allotypic determinants found on IgM molecules ("conformational") appear only when a specific variable region allotype (VHa) is combined with a specific mu constant region allotype (C mu). New combinations of VHa and C mu allotypes were generated in two of the genetic recombinants and led to new "conformational" determinants. The gains and losses observed lend support to the hypothesis that the determinants result from conformations generated by the combination of allotype-specific VH and C mu protein sequences. Conceivably, DNA events that join VH to diversity (D)- and joining (J)-coding sequences or mRNA processing events that splice J to C mu could be involved in generating the sequences that form allotype-specific determinants.     

Analysis of PD-generated SF/sub 6/ decomposition gases adsorbed on carbon nanotubes

Chemical byproducts analysis has been recognized as a powerful diagnosis method for SF₆ gas-insulated switchgear (GIS). The authors have previously demonstrated that a carbon nanotube (CNT) gas sensor could detect partial discharge (PD) generated in SF₆ gas. However, PD-generated decomposition gas species, which were responsible for the CNT gas sensor response, have not been identified yet. In this paper, two kinds of experiments were conducted in order to identify the responsible decomposition gas species. At first, the decomposition gas molecules adsorbed on CNTs were analyzed by Fourier transformation infrared (FTIR) spectroscopy. FTIR absorbance was observed around 735 cm^-1 after CNTs were exposed to PD generated in SF₆. In the second experiment, the CNT gas sensor responses to typical SF₆ decomposition products (HF and SF₄) were examined. The CNT gas sensor responded to these gases in the same way as to PD generated in SF₆. SF₄ response was larger than HF response. Based on these results, SF ₄ and SOF₂ emerged as candidates for the responsible decomposition gases. Electrochemical interactions between adsorbed gas molecules and CNT were discussed based on theoretical predictions of molecular orbital calculations. The calculation results suggested that both of SOF₂ and SF₄ could increase the CNT gas sensor conductance     

Proton conduction at the surface of Y-doped BaCeO3 and its application to an air/fuel sensor

25 mol% Y³⁺-doped BaCeO₃ (BCY25) showed an extremely low activation energy of 0.3 eV for proton conduction at the surface. The resulting overall conductivity at the surface reached 8.24 × 10^–3 S cm^–1 at 400°C, which was 3, 8, and 28 times higher than those in the bulk of BCY25, 20 mol% Sm³⁺-doped ceria, and 8 mol% yttria-stabilized zirconia, respectively. Such fast proton conduction enabled an air/fuel (A/F ) sensor using BCY25 as the solid electrolyte to work above 150°C for H₂ and above 250°C for C₂H₄.