摩托罗拉8位HC08微控制器系列

摩托罗拉微控制器(MCU)具有编程语言简单、外围设备齐全、存储器模型用户友好、选择广及供应多、性能价格比高等优点,被设计者评为最容易使用的产品之一。在全球顶级的原始设备制造厂商(OEM)的无数嵌入式系统和用户最终产品中都可找到摩托罗拉的MCU,包括键盘、传呼机、电子游戏机、洗衣机、安全系统及汽车等。     

Highly Efficient Orange and Green Solid‐State Light‐Emitting Electrochemical Cells Based on Cationic IrIII Complexes with Enhanced Steric Hindrance

Highly efficient orange and green emission from single‐layered solid‐state light‐emitting electrochemical cells based on cationic transition‐metal complexes [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ (where ppy is 2‐phenylpyridine, dFppy is 2‐(2,4‐difluorophenyl)pyridine, and sb is 4,5‐diaza‐9,9′‐spirobifluorene) is reported. Photoluminescence measurements show highly retained quantum yields for [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂ sb]PF₆ in neat films (compared with quantum yields of these complexes dispersed in m‐bis(N‐carbazolyl)benzene films). The spiroconfigured sb ligands effectively enhance the steric hindrance of the complexes and reduce the self‐quenching effect. The devices that use single‐layered neat films of [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ achieve high peak external quantum efficiencies and power efficiencies of 7.1 % and 22.6 lm W^–1) at 2.5 V, and 7.1 % and 26.2 lm W^–1 at 2.8 V, respectively. These efficiencies are among the highest reported for solid‐state light‐emitting electrochemical cells, and indicate that cationic transition‐metal complexes containing ligands with good steric hindrance are excellent candidates for highly efficient solid‐state electrochemical cells.     

Optimal diagonal precoder for multiantenna communication systems

In this paper, we examine a multiantenna single-user wireless communication system fitted with a QR-based successive cancellation receiver (QR receiver). Initially, our consideration is confined to uncoded binary phase shift keying (BPSK) signals transmitted through independent and identically distributed (IID) Rayleigh fading channels and to the design of an optimum precoder for the transmitter. For minimum feeding back of the channel state information (CSI) to the transmitter from the receiver, we stipulate the precoder to be in the form of a power loading square diagonal matrix. We proceed to develop the theory for the design of this diagonal matrix based on the minimization of the lower bound of the average bit error rate (BER) of transmission. The design obtained provides substantially lower error rates than most of other existing schemes under the same environment. The corresponding gain in signal-to-noise ratio (SNR) can be several decibels. To further improve the performance, we extend the design to include an optimal detection order of the received bits using an iterative approach. This iterative process proves to have fast convergence and results in a design providing significant SNR gain. We also propose a subchannel dropping scheme for cases in which SNR is low, and when the minimum BER precoder is equipped with this scheme, its average performance can be substantially superior to the Vertical Bell Laboratories Layered Space-Time (V-BLAST) detection. We extend our design of the optimum precoder to quadrature amplitude modulation (QAM) modulation scheme and similar performance gain has been observed.     

Study of specific absorption rate (SAR) induced in two child head models and in adult heads using mobile phones

This paper gives a first comparison of specific absorption rate (SAR) induced in a child-sized (CS) head and an adult head using a dual-band mobile phone. In the second study, the visible human head is considered and comparison of SAR induced in a CS or child-like (CL) head and an adult head using a dual-band mobile phone is given. All the peaks of average SAR over a mass of 10 and 1 g in the head and the power budget are determined in the two comparisons using the finite-difference time-domain method. The differences between the results for adult and CS or CL heads are given at 900 and 1800 MHz. No important differences are noted for the peak SAR averaged over 10 g (SAR10 g), between the two adult head models, as well as between the two child head models. The peak SAR10 g in the brain of the CS or CL head is slightly more significant than that for the adult one.     

Ni catalyst promotion of a Cis-selective Pd catalyst for canola oil hydrogenation

A Ni catalyst was added to a cis-selective Pd catalyst in an attempt to further improve the Pd catalyst's cis-selectivity and activity for canola oil hydrogenation. The system was tested under reaction conditions known to be suitable for cis-selective hydrogenation with the Pd catalyst (50 ppm Pd, 70 °C, and 5.2 MPa). Although inactive on its own under these conditions, the addition of 100 ppm Ni increased the hydrogenation activity (from 2.12 to 2.49 10⁻² min⁻¹). Further addition of Ni up to 1000 ppm resulted in no further improvements in activity. The trans isomer contents of the oils hydrogenated with Pd and the Pd/Ni systems were similar. The level of conjugated dienes decreased rapidly during hydrogenation with both Pd alone and with the Pd/Ni combination and no changes in conjugation were detected in the presence of the Ni catalyst alone. The increased activity of the Pd/Ni system over Pd alone was attributed to adsorption of catalyst poisons from the oil by Ni.     

Integrated carbon nanotube field emission differential amplifier: Modeling and measurement of the common-mode rejection ratio

A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics.     

Growth of highly orientated strontium barium niobate thin films on Si substrates through the sol–gel process using a K: SBN template layer

We report the growth of highly C-axis orientation of Sr _x Ba_1−x Nb₂O₆ (SBN) thin films on p-type (100) Si substrates by using a potassium-substituted SBN template layer with the sol–gel method. The crystallization of SBN thin films was found closely related to the potassium ion doping concentration and the postannealing temperature of the K-SBN template layer. Secondary ion mass spectrometry analysis showed that potassium elements were accumulated at the interface of the template layer and silicon substrate. SBN films postannealed at 750 °C with K-SBN template layer has a smaller full width at half maximum of X-ray rocking curve of 2.45° than that of 5.40° for the pure SBN films. By introducing a template layer, the surface morphologies of SBN films fabricated on silicon substrate were greatly improved.     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.