全耗尽CMOS／SOI技术的研究进展

ＳＯＩ材料技术的成熟，为功耗低，抗干扰能力强，集成度高，速度快的ＣＭＯＳ／ＳＯＩ器件的研制提供了条件，分析比较了ＣＭＯＳ／ＳＯＩ器件与体硅器件的差异，介绍了国外薄膜全耗尽ＳＯＩ技术的发展和北京大学微电子所的研究成果。     

开关电流技术：一种新的模拟抽样数据处理方法

开关电流（ＳＩ）技术是一种新的模拟抽样数据处理技术，介绍了开关电流电路的基本单元结构，讨论了目前开关电流技术中存在的问题及其解决方法。对开关电流技术与开关电容技术的一些基本特征进行了比较，ＳＩ技术不仅结构简单，而且与标准ＣＭＯＳ工艺兼容，可望替代开关电容电路。     

钠化焙烧钒渣时氯化挥发镓的热力学分析

本文讨论了６００～１２００Ｋ范围内使用ＮａＣｌ作为添加剂焙烧钒渣时氯化发镓的热力可靠性。结论是：氯氧比的大小与溶性钒酸钠生成有直接联系，ＮａＣｌ和Ｎａ２Ｏ。Ｖ２Ｏ５平衡时的氯氧比最大；在氯化钠作用下，镓主要生成ＧａＣｌ３挥发，计算得到的ＧａＣｌ３的生成压相当大。     

Pharmacokinetics of SPECT radiopharmaceuticals for imaging hypoxic tissues

Low back pain (LBP), a common illness that may progress to chronic disability, costs many billions for care, lost work, and compensation. Conventional medicine does not effectively restore chronic LBP patients to work; multidisciplinary rehabilitation does, but limited or delayed access risks unnecessary costs, additional morbidity, and permanent disability. The authors examine costs of delayed treatment for 23 disabled LBP patients in a rehabilitation program. Compensation costs average $26,159 per patient, a sum covering treatment for 3 patients. Additional medical and societal costs are estimated. Factors causing delay, such as economic incentives and ignorance about pain, and policies to remediate these problems, are discussed.     

TiO_2压敏陶瓷晶粒半导化

本文主要研究 TiO_2陶瓷晶粒半导化的途径及晶粒电阻率的测试方法。实验结果表明,通过掺入Nb_2O_5施主杂质可以有效地降低晶粒电阻率,并使 TiO_2系陶瓷具有良好的压敏特性。     

气相处理对碳纤维表面及其复合材料性能的影响

本文对气相表面处理碳纤维的新工艺进行了系统研究。处理后的碳纤维强度、模量不下降,且其表面能、表面化学官能团含量明显增加;表面微晶结构变小,与环氧树脂复合后,层间剪切强度(LLSS)提高47%左右。本文还对复合材料断口的形态结构进行了分析,说明这种表面处理方法能有效改善碳纤维增强环氧树脂复合材料(CFRP)的界面粘结。     

镀Cu碳毡／环氧树脂复合的研制

研究了镀Ｃｕ碳毡／环氧树脂（ＣｕＣＦ／ＥＰ）复合材料的制备，并探讨了镀Ｃｕ量对碳毡电阻率，复合材料电阻率及其电磁屏蔽效率的影响规律，经合理工艺制得的镀Ｃｕ碳毡（４００ｍｇ．ｇ＾－１Ｃｕ－ＣＦ）含量为３００ｍｇ．ｇ＾－１ＣｕＣＦ／ＥＰ复合材料，其电磁屏蔽效率可在２０＝－１０００ＭＨＺ范围内达到６０ｄＢ。     

EFFECT OF HYDROGEN ON THE MICROSTRUCTURE OF SUPER-α2 ALLOY WITH β SOLUTION AND AGEING TREATMENT

借助透射电镜和Ｘ射线衍射仪探讨了氢对Ｓｕｐｅｒ－α２合金β固溶后时效组织的影响，结果表明，氢使时效组织显著细化，使析出相呈细小板条状规则排布，此外，氢还促进Ｂ２相转变为Ｏ相。     

80钢盘条拉拔断裂原因分析

用扫描电镜、金相显微镜观察分析了80钢盘条拉拔断裂的断口，并对盘条进行了理化检验分析。结果表明，盘条组织中较多的网状二次渗碳体是盘条在拉拔过程中脆断的主要原因。     

Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on Spectroscopy Method

An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.