和鼎铜业500kt/a烟气制酸及脱硫装置设计和生产实践

介绍了和鼎铜业公司冶炼烟气制酸及脱硫装置的设计与生产运行情况,详细叙述了各工序的工艺流程、主要设备及运行指标。该装置SO2转化率稳定保持在99.86%以上,吸收率稳定保持在99.99%以上,污酸废水经处理达标后全部回用,制酸尾气和环集烟气经脱硫后实现达标排放,系统运行状况良好。     

eLORAN系统的GRI组合设计研究

针对增强型罗兰(eLORAN)系统增补发射台站建设中的组重复周期(GRI)选择问题,该文主要从数学的角度出发,提出一种基于交叉干扰率的筛选算法.该算法首先考虑了最小可用组重复周期以及秒信息量的要求,并在此基础上通过比较与临近的罗兰C台站间的相对交叉干扰率进行1次筛选;之后通过排列组合进行两两比较并2次筛选;最后,综合考...     

General Spatial Confinement Recrystallization Method for Rapid Preparation of Thickness-Controllable and Uniform Organic Semiconductor Single Crystals

Organic semiconductor single crystals (OSSCs) are ideal materials for studying the intrinsic properties of organic semiconductors (OSCs) and constructing high-performance organic field-effect transistors (OFETs). However, there is no general method to rapidly prepare thickness-controllable and uniform single crystals for various OSCs. Here, inspired by the recrystallization (a spontaneous morphological instability phenomenon) of polycrystalline films, a spatial confinement recrystallization (SCR) method is developed to rapidly (even at several second timescales) grow thickness-controllable and uniform OSSCs in a well-controlled way by applying longitudinal pressure to tailor the growth direction of grains in OSCs polycrystalline films. The relationship between growth parameters including the growth time, temperature, longitudinal pressure, and thickness is comprehensively investigated. Remarkably, this method is applicable for various OSCs including insoluble and soluble small molecules and polymers, and can realize the high-quality crystal array growth. The corresponding 50 dinaphtho[2,3-b:2″,3″-f]thieno[3,2-b]thiophene (DNTT) single crystals coplanar OFETs prepared by the same batch have the mobility of 4.1 ± 0.4 cm² V⁻¹ s⁻¹, showing excellent uniformity. The overall performance of the method is superior to the reported methods in term of growth rate, generality, thickness controllability, and uniformity, indicating its broad application prospects in organic electronic and optoelectronic devices.