Nondestructive evaluation of the characteristics of degraded materials using backward radiated ultrasound

The frequency dependency of Rayleigh surface wave is investigated indirectly by measuring the angular dependency of the backward radiation of the incident ultrasonic wave in two kinds of degraded specimens by scuffing or corrosion. Then, the frequency dependency is compared with the residual stress distribution or the corrosion-fatigue characteristics for the scuffed or corroded specimens, respectively. The width of the backward radiation profile increases with the increase of the variation in residual stress distribution for the scuffed specimens. In the corroded specimens, the profile width decreases with the increase of the effective aging layer thickness and is inversely proportional to the exponent, m, in the Paris’ law that can predict the crack size increase due to fatigue. The result observed in this study demonstrates high potential of backward radiated ultrasound as a tool for nondestructive evaluation of subsurface gradient of material degradation generated by scuffing or corrosion.     

Partitioning for pseudo-exhaustive testing is NP-complete

In the letter, two schemes of circuit partitioning for pseudo-exhaustive testing are described. The complexities of both are proved to be NP-complete.     

数字电视传输流的实时码率变换系统

数字视频压缩后通常是打包成传输流的形式进行传送，年个传输流有其固定的发送码率，在某些应用场合，比如信道调制前端，需要对输入传输流码率进行改变以适应该信道要求，描述了一种全硬件实现，双路输出，实时，节目可选择的码率变换系统的原理及具体实现。     

功率电子器件用AlN陶瓷基板的研制

阐述了AlN陶瓷的烧结原理 ,分析了烧结工艺参数对大面积AlN基板性能的影响 ,成功研制出了高热导率(190W /m·K)、大面积 (14 0mm× 90mm)、翘曲度为 2 0 μm/5 0mm的AlN陶瓷基板。     

高温预析出对Al-Zn-Mg系铝合金时效硬化和应力腐蚀的影响

研究了高温固溶后降温处理工艺对中强可使预析出LC52和7039铝合金的组织、时效硬化和应力腐蚀的影响。金相观察发现,高温预析出可优先在晶界处产生,并提高随后时效状态下晶界析出相的不连续分布程度,温度降低到一定程度晶内和晶界产生大量析出。合金拉伸性能和应力腐蚀结果表明,预析出在保持强度和塑性的同时,可提高抗应力腐蚀性能。而预析出温度降低,合金强度呈下降趋势。     

Application of a multi-channel system for continuous monitoring and an early warning system.

A multi-channel continuous toxicity monitoring system developed in our laboratory, based on two-stage mini-bioreactors, was successfully implemented in the form of computer-based data acquisition. The multi-channel system consists of a series of a two-stage minibioreactor systems connected by a fiber optic probe to a luminometer, and uses genetically engineered bioluminescent bacteria for the detection of the potential toxicity from the soluble chemicals. This system can be stably and continuously operated due to the separation of the culture reactor from the test reactor and accomplish easy and long-term monitoring without system shut down by abrupt inflows of severe polluting chemicals. Four different recombinant bioluminescent bacteria were used in different channels so that the modes of the samples toxicities can be reasonably identified and evaluated based upon the response signature of each channel. The bioluminescent signatures were delivered from four channels by switching one at once, while the data is automatically logged to an IBM compatible computer. We also achieved the enhancement of the system through the manipulation of the dilution rate and the use of thermo-lux fusion strains. Finally, this system is now being implemented to a drinking water reservoir and river for remote sensing as an early warning system.     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.