Dealumination–aging pattern of REUSY zeolites contained in fluid cracking catalysts

The evolution of the properties of a REUSY zeolite contained in a fluid cracking catalyst was investigated under laboratory steam deactivation procedures and in age fractions of the corresponding equilibrium catalyst (Ecat). The aging pattern, defined by the evolution of the zeolite surface area (ZSA) related to the decrease of the unit cell size (UCS), was similar between lab-steamed zeolites and Ecat fractions. A sharp drop in ZSA occurred at ca. 2.430 nm UCS. A study done by FT-IR spectroscopy suggested that zeolite dealumination initially took place more extensively on the sodalite cages and double six-member rings (D6R) of the structure and that the final collapse of the zeolite framework occurred through destruction of the 12-member rings (12M). This can be explained by a crystal fracture and break down process and disassembling of the sodalite cages in the faujasite structure. NH₃ microcalorimetry showed that strong acid sites in faujasites are destroyed by steam aging, but this effect does not lead to a reduction in the cracking activity of the Ecat form. The microactivity test (MAT) showed that the specific activity declined sharply at 2.430 nm UCS. Differences in product selectivity were related to the extent of damage of the zeolite, extra-framework alumina and mesoporosity. While further aging canceled the effect attributed to extra-framework alumina differences attributed to mesoporosity increased.     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

Effect of oxygenation on electrocatalysis of La0.6Ca0.4CoO3−x in bifunctional air electrode

A vacuum-annealed La_0.6Ca_0.4CoO_3−x was consecutively oxygenated in air at temperatures decreasing from 800 to 100 °C, and its electrocatalytic activities for oxygen reduction and evolution were then measured as a function of the oxygenation temperature. The valence of Co cation, changing between +2 and +3, was found susceptible to annealing either in vacuum or air. The catalytic activities initially decrease monotonically as the oxygenation temperature was decreased from 800 to 300 °C, as a result of increasing oxygen content, and then rise abruptly with the oxygen reduction activity reaching a maximum at 200 °C and the oxidation activity at 150 °C. X-ray photoelectron spectroscopy analysis indicated that the enhancements by the low-temperature oxygenation involved increased OH coverage and less charged cations at surface. The results clearly reveal the importance of the post-calcination annealing process for optimizing the performance of La_0.6Ca_0.4CoO_3−x in air electrode applications.     

一种微透镜阵列的研制

介绍一种利用表面张力的作用、以光纤作材料、用分离的自聚焦透镜制作微透镜阵型的方法，这种方法具有制作工艺简单、无须昂贵设备等优点，用此方法实际制作了具有良好连续面型的微透镜阵列，并对制作的微透镜阵列进行了测试，效果较好。     

硫化氢吸收液的电化学分解条件研究

理想的脱硫工艺应满足体积小、费用低、净化度高、无二次污染等要求。在碱性溶液吸收微量硫化氢时同步进行电解，可有效减小设备体积，并将硫化氢转变为氢气和硫磺，不产生恶性气味。为此，实验研究了温度、浓度、电流密度、pH值等因素对电解阳极过程的影响，确定了适宜的电解条件，并在该条件下进行了吸收实验。结果表明，在最佳电解条件下，硫化钠溶液能充分吸收天然气中经变压吸附提浓的硫化氢（800 mg/m³），吸收率大于99.9％。     

高功率横流CO2激光熔池形成过程检测研究

检测激光熔池信息,研究其分布情况,对于控制激光熔池形貌,改进工艺设计,提高激光加工质量,具有重要意义.研制了一套激光熔池动态检测系统,实时检测了高功率横流CO2激光熔池的形成过程,并给出了其温度场分布情况.实验结果表明,刚开始形成的激光熔池由几个分熔池组成,经过一段时间后,形成一个完整的熔池.可通过调整能量密度较高的分光斑覆盖整个加工轨迹截面,优化加工速度和激光功率等参数,提高激光加工质量均匀性.     

东江干流河道来沙量变化分析及泥沙沉积量计算

在对东江干流来水来沙的特性以及东江干流河道梯级枢纽建成前后河道的水沙变化进行分析的基础上,进行了东江干流河道泥沙沉积量的分析计算,为东江干流河道采砂控制规划提供科学依据。     

LD端面抽运掺Yb3+双包层光纤激光器自脉动行为的实验研究

本文对连续波半导体激光器端面抽运的Fabry-Perot腔掺Yb3 双包层光纤激光器的自脉动输出行为进行了研究．发现低Q值腔光纤激光器具有两种形式的自脉动输出，一种是饱和吸收被动调Q产生的自脉冲,另一种是与光纤中的受激Raman散射(SRS)效应相对应的阵发性巨脉冲．通过提高光纤激光器谐振腔的Q值并选择合适的抽运功率，可以有效地减小输出功率的自脉动，获得稳定的连续波激光输出．     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

洼60-H26水平井套铣打捞技术

洼60-H26井是一口中曲率水平井,设计井深1 922 m,由于地面条件的限制,设计采用三维井眼轨道。该井水平段在钻至井深1 801 m时,发生卡钻事故。在卡钻事故处理过程中,采用测卡、爆炸松扣技术取出上部钻具后,应用了不同规格的套铣管对被卡钻具进行套铣,采用间歇式套铣方式实现了大斜度井段(45°-90°)的安全套铣,采用短套铣管完成了时水平井段内φ215．0 mm稳定器的套铣,采用φ228．6 mm套铣管成功套铣水平井段被卡LWD仪器,最后通过震击器震击成功解卡。详细介绍了洼60-H26水平井卡钻事故的处理过程,分析了在水平段处理卡钻事故的难点。该井处理卡钻事故的经验,对以后水平井施工中处理井下事故、打捞贵重仪器具有借鉴价值。