氟挥发对氟化物乳白玻璃瓶罐生产的影响

氟挥发对氟化物乳白玻璃瓶罐生产的影响陆德明，周俊梅，付希英（山东轻工业学院２５０１００）（山东德州玻璃厂２５３０１９）ＴｈｅＩｎｆｌｕｅｎｃｅｏｆＦｌｕｏｒｉｎｅＶｏｌａｔｉｌｉｚａｔｉｏｎｏｎＰｒｏｄｕｃｔｉｏｎｏｆＦｌｕｏｒｉｄｅｏｐａｌＧｌａｓ...     

等距码的对偶距离分布及其性质

本文主要讨论了等距码的对偶距离分布及其性质，然后利用这些性质将［１］中的某些结果推广到ｑ元等距码情形，并得到了其对偶距离分布的递推关系式，最后，本文给出了ｑ元等距码的码字数目的一个上界。     

气相处理对碳纤维表面及其复合材料性能的影响

本文对气相表面处理碳纤维的新工艺进行了系统研究。处理后的碳纤维强度、模量不下降,且其表面能、表面化学官能团含量明显增加;表面微晶结构变小,与环氧树脂复合后,层间剪切强度(LLSS)提高47%左右。本文还对复合材料断口的形态结构进行了分析,说明这种表面处理方法能有效改善碳纤维增强环氧树脂复合材料(CFRP)的界面粘结。     

深过冷熔体激发快速定向凝固

阐述了深过冷的方法，深过冷的遗传性，深过冷度的理论极限以及深过冷熔体激发发快速定向凝固的试验方法及其凝固过程，给出了深过冷熔体（Ｃｕ－５ｗｔ％）激发快速定向凝固与铸态试验激发快速定向凝固的初步试验结果。     

超微粒乳剂的制备及量子尺寸效应的研究

本文制备了四种不同粒度的超微粒AgBr照相乳剂,用X射线衍射技术对其粒子的大小进行了测定;观察到乳剂的紫外吸收峰随晶体颗粒的减小表现出逐渐蓝移;本文提出晶体表面的悬键的存在使得纳米晶体的平均键能升高,并对纳米AgBr乳剂的量子尺寸效应进行了解释。     

Influences of artificial pre-stressing on ply stresses and tensile properties of Vinylon fibre-reinforced aluminium laminates (VIRALL)

A simple micromechanical model based primarily upon the rule-of-mixtures is developed which allows prediction of the effects of fibre preload on the ply stresses (i.e., the initial residual stresses of fibre, adhesive and matrix) induced within VIRALL laminates, and the tensile stress-strain curves and mechanical properties of VIRALL laminates. The analysis of the ply stresses of VIRALL laminates indicates that pre-stressing will dramatically influence the ply stresses. The predicted tensile stress-strain curves of VIRALL laminates are in good agreement with the experimental curves and the results show that the stress-strain curves of VIRALL laminates move upwards when the prestress increases. The predicted tensile mechanical properties of VIRALL laminates at room temperature show good agreement with those obtained experimentally; both show that prestress can improve the tensile properties (i.e., elastic limit strength, 0.2% yield strength and failure strength) of VIRALL laminates.     

The relationship between serum lipids, apolipoproteins level and bile lipids level, chemical type of stone

To pick up serum high risk lithogenic factors predisposing one to gallstone formation and protective factors against gallstone formation in gallbladder. We compared serum lipid and apolipoprotein level of patients with gallbladder stone (stone group) with that of patients without gallbladder stone (control group). The correlation between serum lipid, apolipoprotein level and bile lipid level, cholesterol saturated index (CSI), characteristics of lipidemia in different kinds of gallbladder stones were studied. The results showed that the increase of serum Apo A1, C2 and E level in the stone group was more significant than in the control group. But there was no statistical significance in TC, TG, LDL-C, HDL-C, Apo A2, B, C3 level between the stone and control groups. These results suggested that serum apolipoproteins perhaps are more sensitive parameters than serum lipids in distinguishing patients with stones from those without stones. There were different profiles of serum lipid and apolipoproteins in different chemical types of gallbladder stones. Increased level in serum LDL-C, Apo B and ratio of LDL-C/HDL-C were characterized by an index for cholesterol stone, otherwise that in serum TG and Apo C2 an index for pigment stones. There was a positive correlation between serum total cholesterol (TC) or Apo B, C2, C3 and cholesterol amount or CSI in gallbladder bile. Therefore, TC, Apo B, C2, C3 could be considered as high risk lithogenic factors. A positive correlation existed between serum HDL-C and lecithin in gallbladder or common bile duct (CBD) bile as well as between HDL-C and bile acids in CBD bile. Thus, HDL-C might be a protective factor against gallstone formation in gallbladder.     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

集群移动通信系统的组网设计

本文对集群移动通信系统在组网设计时应考虑的问题进行了分析，并提出了具体步骤和方法，可供集群系统组网设计时参考。