Thermomechanical finite-element model of shell behavior in continuous casting of steel

A coupled finite-element model, CON2D, has been developed to simulate temperature, stress, and shape development during the continuous casting of steel, both in and below the mold. The model simulates a transverse section of the strand in generalized plane strain as it moves down at the casting speed. It includes the effects of heat conduction, solidification, nonuniform superheat dissipation due to turbulent fluid flow, mutual dependence of the heat transfer and shrinkage on the size of the interfacial gap, the taper of the mold wall, and the thermal distortion of the mold. The stress model features an elastic-viscoplastic creep constitutive equation that accounts for the different responses of the liquid, semisolid, delta-ferrite, and austenite phases. Functions depending on temperature and composition are employed for properties such as thermal linear expansion. A contact algorithm is used to prevent penetration of the shell into the mold wall due to the internal liquid pressure. An efficient two-step algorithm is used to integrate these highly nonlinear equations. The model is validated with an analytical solution for both temperature and stress in a solidifying slab. It is applied to simulate continuous casting of a 120 mm billet and compares favorably with plant measurements of mold wall temperature, total heat removal, and shell thickness, including thinning of the corner. The model is ready to investigate issues in continuous casting such as mold taper optimization, minimum shell thickness to avoid breakouts, and maximum casting speed to avoid hot-tear crack formation due to submold bulging.     

Glycoconjugated polymer 6. Synthesis of poly[styrene-<Emphasis Type="Italic">block</Emphasis>-(styrene-<Emphasis Type="Italic">graft</Emphasis>-amylose)] via potato phosphorylase-catalyzed polymerization

Summary The potato phosphorylase-catalyzed polymerization of α-D-glucose-1-phosphate (G-1-P) onto poly[styrene-block-(4-vinylbenzyl maltohexaoside)] (1) was performed at the molar ratios of [G-l-P]₀ and [maltohexaose]₀ of 35, 80, and 250. The product was found to be soluble in dimethyl sulfoxide, which was a good solvent for amylose, and showed the complex-formation with iodine, indicating that the product was assignable to poly[styrene-block-(styrene-graft-amylose)] (2). The quantitative analysis of the liberated phosphoric acid gave the average degree of polymerization o f the glucose unit (n) as 27, 5 1, and 180 for 2-I, 2-II, and 2-III, respectively. Received: 29 November 2002/Accepted: 22 December 2002 Correspondence to Toyoji Kakuchi     

MULTICARRIER DS—CDMA WITH ADAPTIVE MODULATION AND POWER ALLOCATION

Adaptive modulation and power allocation is introduced into the multicarrier DSCDMA system to improve the system performance and bandwidth efficiency.First,the system design appropriate for adaptive modulation and power allocation is given,then the algorithm of adaptive modulation and power allocation is applied.Simulation results demonstrate great performance improvement compared with the fixed modulated one.     

Exchange-correlation errors at harmonic and anharmonic orders: the case of bulk Cu

As an aid towards improving the treatment of exchange and correlation effects in electronic structure calculations, it is desirable to have a clear picture of the errors introduced by currently popular approximate exchange-correlation functionals. We have performed ab initio density functional theory and density functional perturbation theory calculations to investigate the thermal properties of bulk Cu, using both the local density approximation (LDA) and the generalized gradient approximation (GGA). Thermal effects are treated within the quasiharmonic approximation. We find that the LDA and GGA errors for anharmonic quantities are an order of magnitude smaller than for harmonic quantities; we argue that this might be a general feature. We also obtain much closer agreement with experiment than earlier, more approximate calculations.     

Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

橡胶促进剂DM的合成工艺

M氧化生成DM是自由基反应机理，结合微反应器机理，采用分子氧化的反应方式，选用绿色溶剂异丙醇、环境友好型氧化剂H202，一步法制取高品质DM。对反应时间、反应温度、氧化剂用量等因素进行考察，确定最佳工艺条件为：反应时间90min，反应温度55℃，氧化剂不过量，碱过量5％，M—Na溶液M含量30％，加料时N60 min，溶剂用量为M—Na溶液质量的1．5倍，所得产品质量合格，熔点可达180℃。     

重复压裂气井产能模拟研究

由于重复压裂气井原有裂缝的失效程度难以评价。导致重复压裂气井的产能预测常常有很大的误差。为此，根据重复压裂气井的压前产量和舍水率，拟合了原有裂缝的有效率，在考虑新裂缝和原有裂缝共同作用的情况下，建立了气、水两相平面二维的裂缝-油藏数学模型，通过对模型的数值求解，对重复压裂气井进行了产能评价。研究表明，在考虑新、老裂缝共同作用下的产能评价方法，能更为准确地预测重复压裂后的生产动态情况，对压裂时机的确定、压后经济效益的预测都具有重要的指导意义。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.