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1.
The influence of the environment on the excited state transitions of meso-tetrakis(p-sulfonatophenyl) porphyrin (TPPS) is reported. TPPS was investigated in protonated and non-protonated forms, and in the presence of the cationic cetyltrimethylammonium bromide (CTAB) micelles. The singlet excited-state absorption spectra were measured by using the white-light continuum Z-scan technique and the triplet–triplet absorption spectra were acquired employing an association of laser flash photolysis and Z-scan techniques. Our results show that the perseveration of the molecular symmetry, upon excitation, depends on the state of multiplicity of the molecules, as well as on the environment and structural characteristics of the porphyrin. Additionally, it was observed that for excited molecules, the ring distortion caused by the protonation of porphyrin ring has great influence on the changes observed for the symmetry and vibronic structure. The results clearly show that the porphyrin investigated is a promising candidate for optical limiting applications for all investigated environments. 相似文献
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介绍了圆形超细金属/合金丝制备技术基本原理、技术特点及基本性能,主要包括拉拔技术、电解腐蚀技术及熔融快速凝固技术。回顾了超细W、Mo、Al丝等在Z箍缩丝阵负载材料中的应用。 相似文献
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《Diamond and Related Materials》2005,14(10):1673-1677
This paper summarizes the preliminary results obtained from lithium electrochemical intercalation into boron-doped diamond films grown on carbon felt (BDD/CF electrode). BDD films have been grown by Hot Filaments Chemical Vapor Deposition (HFCVD) and have been characterized by Scanning Electron Microscopy (SEM) and Raman Scattering spectroscopy. BDD/CF composite electrodes, which contain a diamond layer, lead to higher conductivity and smaller grain sizes. In turn, they are richer in boundary or sp2 sites, and present a reversible specific capacity that is much larger than that of the substrate alone, indicating that the diamond layer effectively participates in lithium storage. Diamond layers displaying boron doping levels of 1019 and 1021 part cm− 3 provide a specific capacity of 160 and 370 mA h g− 1, respectively, which is associated with lithium storage. 相似文献
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研制了用于探测脉宽为亚纳秒级软X射线脉冲的小型化X射线探测器,对该类结构的X射线探测器的响应时间参数进行了理论分析与计算。根据理论分析与计算结果,采用基于有限元法的电磁场仿真软件HFSS10.0对该探测器的探测二极管进行了电磁场建模与仿真,并根据传输线理论对传输超宽带信号的同轴输出通路进行了优化设计,采用超薄高介电强度薄膜构成大存储电容的新方式,解决了设计该类高速探测器中存在的大存储电容与耐高压的技术难题。在“神光Ⅲ原型激光装置”上对该探测器进行了实验考核。实验结果表明,探测器的响应时间可达51 ps。此外,还对设计该类高速响应探测器时某些物理学方面的考虑进行了讨论。 相似文献
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彭丽萍 《武汉理工大学学报(材料科学英文版)》2017,32(4):866-870
Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10~(-4) Ω·cm and the highest carrier concentration of 1.86×10~(21) cm~(-3) can be obtained from Zn O thin films with an indium content of 5at% in the target. 相似文献
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熔石英元件抛光加工表面残余应力的计算方法 总被引:1,自引:1,他引:0
为解决传统检测方法无法直接定量检测非晶体熔石英玻璃表面残余应力的问题,基于脆性固体断裂力学理论,推导残余应力的理论计算公式,提出光学元件抛光加工表面残余应力计算新方法.采用尖锐压头进行纳米印压实验,提取压痕过程中对残余应力敏感的参数,并对实验数据进行线性拟合,确定拟合线的斜率,通过测量残余应力引起其他物理参数的变化计算残余应力.对比分析结果表明,计算得到残余应力值与应力双折射仪检测得到的数据基本吻合,验证了提出残余应力计算方法的正确性. 相似文献
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