Study of metal assisted anisotropic chemical etching of silicon for high aspect ratio in crystalline silicon solar cells

Textured surface is commonly used to enhance the efficiency of silicon solar cells by reducing the overall reflectance and improving the light scattering. In this study, a comparison between isotropic and anisotropic etching methods was investigated. The deep funnel shaped structures with high aspect ratio are proposed for better light trapping with low reflectance in crystalline silicon solar cells. The anisotropic metal assisted chemical etching (MACE) was used to form the funnel shaped structures with various aspect ratios. The funnel shaped structures showed an average reflectance of 14.75% while it was 15.77% for the pillar shaped structures. The average reflectance was further reduced to 9.49% using deep funnel shaped structures with an aspect ratio of 1:1.18. The deep funnel shaped structures with high aspect ratios can be employed for high performance of crystalline silicon solar cells.     

Ion beam induced evolution of surface morphology and optical properties of SnO2–ZnO nanocomposite thin films

SnO₂–ZnO nanocomposite thin films, prepared by a simple carbothermal reduction based vapor deposition method, were irradiated with 8 MeV Si³⁺ ions for engineering the morphological and optical properties. The surface morphology of the nanocomposites was studied by atomic force microscopy (AFM), while the optical properties were investigated by photoluminescence spectroscopy (PL) and Raman spectroscopy. AFM studies on the irradiated samples revealed growth of nanoparticles at lower fluence and a significant change in surface morphology leading to the formation of nanosheets and their aggregates at higher fluences. A tentative mechanism underlying the observed ion induced evolution of surface morphology of SnO₂–ZnO nanocomposite is proposed. PL studies revealed strong enhancement in the UV emissions from the nanocomposite thin film at lower fluence, while a drastic decrease in the UV emissions along with a significant enhancement in the defect emissions has been observed at higher fluences.     

Kinetics of light-induced degradation in compensated boron-doped silicon investigated using photoluminescence and numerical simulation

We use photoluminescence to observe light-induced degradation in silicon in real time. Numerical simulations are used to match our results and lifetime decay data from the literature with theoretical models for the generation of the light-induced boron–oxygen defects. It is found that the existing model of the slowly generated defect SRC, where its saturated concentration is a function of the majority carrier concentration, does not explain certain results in both p- and n-type samples. A new model is proposed in which the saturated SRC concentration is controlled by the total hole concentration under illumination.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Unusual Two-Step Assembly of a Minimalistic Dipeptide-Based Functional Hypergelator

Self-assembled peptide hydrogels represent the realization of peptide nanotechnology into biomedical products. There is a continuous quest to identify the simplest building blocks and optimize their critical gelation concentration (CGC). Herein, a minimalistic, de novo dipeptide, Fmoc-Lys(Fmoc)-Asp, as an hydrogelator with the lowest CGC ever reported, almost fourfold lower as compared to that of a large hexadecapeptide previously described, is reported. The dipeptide self-assembles through an unusual and unprecedented two-step process as elucidated by solid-state NMR and molecular dynamics simulation. The hydrogel is cytocompatible and supports 2D/3D cell growth. Conductive composite gels composed of Fmoc-Lys(Fmoc)-Asp and a conductive polymer exhibit excellent DNA binding. Fmoc-Lys(Fmoc)-Asp exhibits the lowest CGC and highest mechanical properties when compared to a library of dipeptide analogues, thus validating the uniqueness of the molecular design which confers useful properties for various potential applications.     

Fabrication and microwave absorption properties of magnetite nanoparticle–carbon nanotube–hollow carbon fiber composites

Absorbents with “tree-like” structures, which were composed of hollow porous carbon fibers (HPCFs) acting as “trunk” structures, carbon nanotubes (CNTs) as “branch” structures and magnetite (Fe₃O₄) nanoparticles playing the role of “fruit” structures were prepared by chemical vapor deposition technique and chemical reaction. Microwave reflection loss, permittivity and permeability of Fe₃O₄–CNTs–HPCFs composites were investigated in the frequency range of 2–18 GHz. It was proven that prepared absorbents possessed the excellent electromagnetic wave absorbing performances. The bandwidth with a reflection loss less than −15 dB covers a wide frequency range from 10.2 to 18 GHz with the thickness of 1.5–3.0 mm, and the minimum reflection loss is −50.9 dB at 14.03 GHz with a 2.5 mm thick sample layer. Microwave absorbing mechanism of the Fe₃O₄–CNTs–HPCFs composites is concluded as dielectric polarization and the synergetic interactions exist between Fe₃O₄ and CNTs–HPCFs.     

Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films

We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion–oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall–van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ~10²⁰ cm⁻³ in average and carrier mobilities of 5 cm²/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR~0.5% in accordance with the usual literature reports on samples produced by other methods.