Doping-free hybrid white organic light-emitting diodes with fluorescent blue,phosphorescent green and red emission layers

Industrialized white organic light-emitting diodes (OLEDs) currently require host-guest doping, a complicated process necessitating precise control of the guest concentration to get high efficiency and stability. Two doping-free, hybrid white OLEDs with fluorescent blue, and phosphorescent green and red emissive layers (EMLs) are reported in this work. An ultra-thin red phosphorescent EML was situated in a blue-emitting electron transport layer (ETL), while the ultra-thin green phosphorescent EML was placed either in the ETL (Device 1), or the hole transport layer (HTL) (Device 2). Device 2 exhibits higher efficiency and more stable spectrum due to the enhanced utilization of excitons by ultra-thin green EML at the exciton generation zone within the HTL. Values of current efficiency (CE), power efficiency (PE), and CRI obtained for the optimized hybrid white OLEDs fabricated through a doping-free process were of 23.2 cd/A, 20.5 lm/W and 82 at 1000 cd/m², respectively.     

Theoretical investigations on the spin Hamiltonian parameters for Er3+ ion in LiYF4

The spin Hamiltonian parameters g_∥, g_⊥, A_∥ and A_⊥ for Er³⁺ ion in LiYF₄ are investigated by using the perturbation formulas of these parameters for a 4f¹¹ ion in tetragonal symmetry. In these formulas, the contributions to the spin Hamiltonian parameters from the second-order perturbation terms and the admixtures of different states are considered. The relevant crystal field parameters are calculated from the superposition model and the local structural parameters of the Y³⁺ site occupied by impurity Er³⁺. The theoretical optical spectra within ⁴I_15/2 and ⁴I_13/2 states and the spin Hamiltonian parameters obtained in this work are consistent with the observed values.     

Synthesis and characterization of LiNi0.95-xCoxAl0.05O2 for lithium-ion batteries

Samples of LiNi0.95-xCoxAl0.05O2 （x = 0.10 and 0.15） and LiNiO2, synthesized by the solid-state reaction at 725℃ for 24 h from LiOH-H2O, Ni2O3, Co2O3, and AI（OH）3 under an oxygen stream, were characterized by TG-DTA, XRD, SEM, and electrochemical tests. Simultaneous doping of cobalt and aluminum at the Ni-site in LiNiO2 was tried to improve the cathode performance for lithium-ion batteries. The results showed that co-doping （especially, 5 at.% A1 and 10 at.% Co） definitely had a large beneficial effect in increasing the capacity （186.2 mA.h/g of the first discharge capacity for LiNio.s.42OoaoAlo.0502） and cycling behavior （180.1 mA-h/g after 10 cycles for LiNio.85CooaoAlo.osO2） compared with 180.7 mA.h/g of the first discharge capacity and 157.7 mA.h/g of the tenth discharge capacity for LiNiO2, respectively. Differen- tial capacity versus voltage curves showed that the co-doped LiNio.95_xCoxmlo.osO2 had less intensity of the phase transitions than the pristine LiNiO2.     

AgTaO3 and AgNbO3 thin films by pulsed laser deposition

Silver tantalate AgTaO₃ (ATO) and silver niobate AgNbO₃ (ANO) films have been grown on to the LaAlO₃ (001) and sapphire Al₂O₃ (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO₃ (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz.     

Preparation and employment of carbon nanodots to improve electron extraction capacity of polyethylenimine interfacial layer for polymer solar cells

The performance of polymer solar cells is substantially enhanced by introducing carbon nanodots as additives in polyethylenimine buffer layer. The most pronounced effect is observed in one type of device with the average power conversion efficiencies increased from 5.78% to 7.56% after the addition of carbon nanodots at an optimal concentration in the interfacial layer, which is mainly attributed to the enhanced light trapping and electron transfer in the devices. Besides the light-harvesting and electron transport capacity improvement, the addition of carbon nanodots can also increase exciton generation and dissociation, leading to a high electron mobility. This study demonstrates a facile approach for enhancing the efficiencies of polymer solar cells.     

Luminescence and energy transfer of color-tunable Lu_2MgAl_4SiO_(12):Eu~(2+),Ce~(3+),Mn~(2+) phosphors

Energy transfer among the co-doped activators is an efficient route to achieve color-tunable emission in inorganic phosphors.Herein,photoluminescence tuning from blue to cyan has been achieved in the Lu_2MgAl_4 SiO_(12);Eu~(2+),Ce~(3+)phosphors by varying the Ce~(3+) concentration with a fixed Eu~(2+)content.With the further introduction of a Mn~(2+)-Si4+couple into the host lattice,the emission color can be tuned to red through the energy transfer of Eu~(2+)and Mn~(2+).The luminescence properties and the energy transfer mechanism were studied in detail.The energy transfer from Eu~(2+)to Ce~(3+)is certified as a dipolequadrupole interaction with the energy transfer efficiency of 41.4% and Eu~(2+)to Mn~(2+)belongs to a dipole-dipole interaction with the energy transfer efficiency of 94.3%.The results imply that this singlephased Lu_2MgAl4 SiO_(12):Eu~(2+),Ce~(3+),Mn~(2+)phosphor has a potential prospect for application in near-UV chip pumped white light emitting diodes.     

Structure,spectroscopic properties and laser performance of Nd:YNbO4 at 1066 nm

We have demonstrated continuous wave (CW) laser operation of Nd:YNbO₄ crystal at 1066 nm for the first time. A maximum output power of 1.12 W with the incident power of 5.0 W is successfully achieved corresponding to an optical-to-optical conversion efficiency of 22.4% and a slope efficiency of 24.0%. The large absorption cross section (8.7 × 10⁻²⁰ cm²) and wide absorption band (6 nm) at around 808 nm indicates the good pumping efficiency by laser diodes (LD). The small emission cross section (29 × 10⁻²⁰ cm²) and relative long lifetime of the ⁴F_3/2 → ⁴I_11/2 transition indicates good energy storage capacity of Nd:YNbO₄. Moreover, the raw materials of Nd:YNbO₄ are stable, thus, it can grow high-quality and large-size by Czochralski (CZ) method. Therefore the Nd:YNbO₄ crystal is a potentially new laser material suitable for LD pumping.     

Oxidation of graphene-modified HfB2-SiC ceramics by supersonic dissociated air flow

The oxidation resistance of ultra-high-temperature ceramic material (HfB₂-30 vol%SiC)-2 vol%rGO (rGO: reduced graphene oxide) under long-term exposure (2000s) to a supersonic air flow has been studied. The ceramics were obtained by reactive hot pressing of HfB₂-(SiO₂-C)-rGO composite powder at a temperature of 1800°C (pressure 30 MPa, holding time 15 min, Ar). The surface temperature of graphene-modified ceramics under the influence of heating by high-enthalpy air flow (heat flow q reached 779 W·cm^–2) did not exceed 1700°C, which is 650–700°C less than for the HfB₂-30 vol%SiC baseline ceramics. This may be related to an increase in the efficiency of heat transfer from the sample to the water-cooled module, due to the higher thermal conductivity of the rGO-containing material. Thereby, a decrease in the material degradation degree has been noted, i.e. decrease in the recession rate and decrease in the total thickness of the oxidised ceramic layer by tenth. The peculiarities of the oxidised surface and near-surface region microstructure upon aerodynamic heating of the graphene-modified ceramic material, have been shown.     

Insight into t->m transition of MW treated 3Y-PSZ ceramics by grazing incidence X-ray diffraction

The influence of a microwave hybrid heat treatment (MHH) on the surface and in-depth mineralogical transformation of pre-sintered 3Y-PSZ was investigated. 3Y-PSZ samples were prepared by slip casting and sintered by conventional firing (1270 °C). Then, different MHH treatments from 5 to 15 min. at 1200 °C were applied to obtain a fully stabilized 3Y-TZP. The monoclinic fraction depth profiles in the first micrometres (up to 5) of thickness were investigated by means of the grazing incident X-ray diffraction technique (GIXRD). A good sintering degree with practically nil closed porosity and grain growth was achieved after MHH of 15 min. MHH increases the tetragonal phase content both in the surface and in-depth, reducing completely the monoclinic phase shell typically found after conventional sintering. A new parabolic model is proposed for the convoluted monoclinic fraction depth profile, which through the value of its horizontal asymptote allows the determination of the monoclinic shell thickness.     

Low dielectric loss ceramics in the Mg4Nb2O9-ZnAl2O4-TiO2 ternary system

This study used a traditional solid-state reaction method to prepare a series of composite ceramics in the 0.7Mg₄Nb₂O₉-(0.3-x)ZnAl₂O₄-xTiO₂ ternary system. Crystalline phases and microstructure of Mg₄Nb₂O₉-ZnAl₂O₄-TiO₂ dielectric ceramic composites were investigated and correlated with the relevant dielectric properties. It was observed that the addition of Ti⁴⁺ substituted Nb⁵⁺ in the Mg₄Nb₂O₉ structure, which promoted the decomposition of Mg₄Nb₂O₉ to form the second phase, Mg₅Nb₄O₁₅, during sintering. The synergistic effect of ZnAl₂O₄-TiO₂ co-doping promoted the Mg₄Nb₂O₉ ceramic densification. The sample (0.7Mg₄Nb₂O₉-(0.3-x)ZnAl₂O₄-xTiO₂) with x = 0.15?0.2 exhibited dielectric constants of 13–14, larger than those of ZnAl₂O₄, Mg₄Nb₂O₉ and Mg₅Nb₄O₁₅, due to the NbO₆ octahedra distortion resulting from the substitution of Al³⁺/Ti⁴⁺ for Nb⁵⁺ in Mg₄Nb₂O₉ and Mg₅Nb₄O₁₅. The long-range order of the NbO₆ octahedra was enhanced by co-doping ZnAl₂O₄ and TiO₂, thereby enhancing the Qxf value. A dielectric constant of 13.1, Qxf value of 366,000 GHz and a τ_f of ?60.8 ppm/°C were obtained from 1300 °C sintered 0.7Mg₄Nb₂O₉-0.15ZnAl₂O₄-0.15TiO₂. These results show that 0.7Mg₄Nb₂O₉-0.15 ZnAl₂O₄-0.15TiO₂ ceramic is a good candidate for microwave electronic device applications.