Electrical characterization and modelling of top‐emitting PIN‐OLEDs

Abstract— Positively doped, intrinsic, negatively doped organic light‐emitting diodes (PIN‐OLEDs) have been shown to exhibit high efficiency and a long lifetime compared to conventional small‐molecule OLEDs (SM‐OLEDs). The improved performance of PIN‐OLEDs makes them attractive for use in display applications. Knowledge of the electrical load exhibited by these devices is used to develop an equivalent electrical‐circuit model. Such models are used by circuit designers to assist with the precise design of active‐matrix‐display driver circuits used in such applications. In this paper, the development of a SPICE model for a top‐emitting PIN‐OLED stack is reported.     

Effect of lithium and silver diffusion in single-stack and tandem OLED devices

A study of metal (Li, Ag) diffusion has been carried out in an archetypal OLED device based on N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine|tris(8-hydroxyquinolinato) aluminum|4,7-diphenyl-1,10-phenanthroline (NPB|Alq₃|Bphen). Using single-stack and two-stack tandem OLED structures with variations of layer thicknesses and metal layer placements, we have found that Ag vapor-deposited on Alq₃ layer can diffuse or penetrate deep into Alq₃, up to ∼2,000 Å, causing luminescence quenching. This diffusion can be substantially prevented by a thin layer of Li or Bphen deposited on Alq₃ prior to the deposition of Ag. In contrast, Li diffusion in either Alq₃ or Bphen is limited to about 50–100 Å. Li appears to be able to diffuse into Bphen irrespective of the order of Li and Bphen depositions.     

Highly efficient and stable white organic light emitting diode with triply doped structure

A triply doped white organic light emitting diode with red and blue dyes in the light emitting layer and a green dye in another layer is proposed. The device structure was CuPc(12 nm)/NPB(40 nm)/ADN:DCJTB(0.2%):TBPe(1%)(50 nm)/Alq:C545(0.5%)(12 nm)/LiF(4 nm)/Al. Here copper phthalocyanine (CuPc) is a buffer layer, N,N′-di(naphthalene-1-y1)-N,N′-dipheyl-benzidine (NPB) is a hole transporting layer, 9,10-di-(2-naphthyl) anthracene (ADN) is blue emitting layer, tris (8-quinolinolato)aluminium complex (Alq) is an electron transporting layer, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidy1-9-enyl)-4H- pyran (DCJTB), 2,5,8,11-tetra-butylperylene (TBPe), Coumarin6 and deveriative (C545) are red, blue and green dyes, respectively. This device shows a luminance of 21200 cd/m² at driving current of 400 mA/cm² and 1026 cd/m² at 20 mA/cm². Its efficiency is 6 cd/A and 3.11 Lm/W. It also shows a higher operating stability: the half lifetime is 22,245 h at an initial luminance of 100 cd/m², while the driving voltage increased only 0.3 V.     

Ink‐jet printing: The route to production of full‐color P‐OLED displays

Abstract— Ink‐jet‐printing technology for displays has been making rapid progress and is now nearing production. This paper will go through the developments that have been carried out at CDT, Ltd., to achieve this status. The ink‐jet head and machine development that underpin the capability of the RGB printing process to manufacture P‐OLEDs at high speed with high reliability and with the film‐forming properties to achieve the appropriate device performance will be described. The important contribution made by the availability of flexible metrological tools will be discussed.     

Full‐color AMOLED with RGBW pixel pattern

Abstract— A full‐color AMOLED display with an RGBW color filter pattern has been fabricated. Displays with this format require about one‐half the power of analogous RGB displays. RGBW and RGB 2.16‐in.‐diagonal displays with average power consumptions of 180 and 340 mW, respectively, were characterized for a set of standard digital still camera images at a luminance of 100 cd/m². In both cases, a white‐emitting AMOLED was used as the light source, and standard LCD filters were used to provide the R, G, and B emission. The color gamuts of these displays were identical and the higher overall efficiency of the RGBW format results from two factors. First, a large fraction of a typical image is near neutral in color and can be reproduced using the white sub‐pixel. Second, the white sub‐pixel in an RGBW AMOLED display is highly efficient because of the absence of any color filter. The efficiency of these displays can be further enhanced by choosing a white emitter optimized to the target display white point (in this case D65). A two‐emission layer configuration based upon separate yellow and blue‐emitting regions is shown to be well suited for both the RGBW and RGB formats.     

单层结构白色聚合物电致发光器件制备及其性能

选择梯形对次苯基聚合物(I．PPP)为母体和蓝色发光材料,掺杂MEH-PPV、OXD-7、PMMA分别作为橙红色发光材料、电子传输材料和绝缘介质材料,用旋涂法制成结构为ITO／白色发光层／A1的单层白色有机发光器件。对器件进行热处理(最佳热处理条件为180℃,1h)后,发现器件的发光性能得到明显改善。驱动电压25V时器件的发光亮度由42cd／m^2提高到355cd／m^2,色坐标为(x=0．332,y=0．347),非常接近于白色等能点。     

利用多阱结构改善有机电致发光器件效率

将N,N'-bis-(1-naphthy1)-N,N'-dipheny-1,1'bipheny1 4,4'-diamine(NPB)与bathocuproine(BCP)2种材料以交叠沉积方式组成一种周期性结构作为空穴注入层,制备了结构为ITO/[NPB/BCP]n/AlQ/LiF/Al的有机电致发光器件(OLED).通过改变空穴注入层阱状结构的重复周期数n,可改变载流子复合区域,进而获得近白光和绿光发射.由于该结构能获得更好的载流子注入平衡,具有交叠结构空穴注入层的近白光器件在15 V时亮度达到3 433.8 cd/m2,在电流密度为60.9 mA/cm2时最大发光效率为2.26 cd/A.当周期数n大于3时得到绿光发射,与单空穴注入层ITO/NPB/AlQ/LiF/Al器件相比,交叠空穴注入层可将器件的最大亮度由2 512.8 cd/m2提高到866 1.0 cd/m2,最大亮度效率在20 mA/cm2时达到4.94 cd/A.     

用于液晶背光源的双层掺杂白光OLED

制备了一种双层掺杂的白光有机电致发光器件(OLED),其中BAlq:TBPe掺杂层发蓝光,Zn(BTZ)2:Rubrene掺杂层发橙色光.器件在驱动电压5 V时就能发出白光,且在驱动电压5～15 V内色坐标变化较小,均在白光色域区,在15 V时亮度达到8 572 cd/m2,在电流密度50 mA/cm2时量子效率最高达到0.9%.对该白光OLED的发光和电学性能以及发光机理进行了深入的研究和探讨,进而制备了应用于液晶显示(LCD)背光源的近白光OLED,有效面积达到3 cm×3 cm,在10 V时平均亮度达到～1 300 cd/m2,发光亮度均匀性为90%,色度均匀性较好,很好地符合了LCD对背光源的要求.     

有机电致发光的研究进展及展望

对有机电致发光(OLEDs)的研究进展进行了综述。内容包括:有机电致发光器件的阴、阳极材料、电极修饰、发光材料、发光效率、新的器件结构以及驱动电路的研究现状。剖析了该领域的研究热点,并展望了其发展应用前景。     

一种显示控制与驱动芯片中的高速双端口SRAM设计

文章详细描述了一种集成在OLED显示控制驱动芯片中的双端口SRAM的设计，从电路和版图两方面对SRAM的核心部分进行了详细描述，并且设计了一种可用于OLED显示控制驱动芯片中的96x64x16位的双端口SRAM．最后给出了测试结果，验证了设计的正确性。