双电层电容器用沥青焦基活性炭的制备工艺条件对其孔结构及电化学性能的影响

以沥青焦为原料，KOH为活化剂在不同的工艺条件下制备了双层电容器用活性炭电极材料。分别考察了活化剂用量、活化时间、以及加入Cu、Ni催化活化等工艺条件对活性炭孔结构及作为双电层电容器电极的电化学性能的影响。结果表明：在实验范围内增加KOH用量及活化时间，活性炭的比表面积和比电容增加，比电容最高达到247F／g。添加Cu、Ni催化活化后活性炭的比表面积及比电容增加，高功率放电性能明显改善。     

电压波动和闪变对整流桥后电解电容器的影响

电网电压存在波动和闪变,使整流桥后电解电容器的纹波电流明显增加,导致其损耗增加和使用寿命缩短。为了分析该现象的成因和机制,利用三角函数模型定性分析电网电压波动和闪变引起电解电容器纹波电流的变化情况,同时推导验证了其有效值变大的现象。同时还介绍了电容器纹波电流的测试方法,并采用具有傅里叶分析功能的示波器对实际样机的纹波电流进行测试分析,获得了支持理论分析的实验数据和结果。     

Electrochemical study of the chromium electrode behaviour in borate buffer solution

The electrochemical behaviour of the chromium electrode in borate buffer solution (pH 9.3) was studied by cyclic voltammetry and electrochemical impedance spectroscopy. Chromium passivity was observed over a broad potential region, from –1.0 to 0.5 V vs SCE. The passivation process took place in two steps: formation of a chromium oxide monolayer and transition of chromium to a higher valence state. The anodic film exhibited the properties of a p-type semiconductor. Transpassive dissolution of chromium occurred at 0.5 V vs SCE, with two reaction intermediates present, Cr_Cr ^III and Cr_ad ⁴⁺.     

BLDCM控制系统功率逆变电路发热分析及实验验证

针对BLDCM控制系统功率逆变电路能耗问题,分析了功率器件工作时产生损耗的机理,探讨了PWM斩波方式、斩波频率及BLDCM绕组电感3个因素对功率逆变电路发热的影响并进行了相应实验验证,给出了不同条件下BLDCM电枢绕组电流波形和功率器件温升实验数据,对降低BLDCM控制系统功率逆变电路损耗进而提高控制系统效率、增强工作可靠性、提升BLDCM控制系统使用寿命等具有重要的理论及工程应用价值。     

一种准Z-源DC-DC变换器的建模与控制

分析了准Z-源DC-DC变换器在稳态时的工作原理,根据状态空间平均法建立了准Z-源DC-DC网络在电流连续工作模式下(CCM)的交流小信号模型,并对模型进行分析,获得控制至输出的传递函数,实现了输出电压闭环控制。最后建立了实验样机,进行了实验验证。     

Capacitance behavior of activated carbon fibers with oxygen-plasma treatment

Modified activated carbon fibers (ACFs) were used as the electrodes of an electric double-layer capacitor and showed an enhanced capacitance effect after a RF-plasma treatment. The capacitance and the surface functional groups of the ACFs were studied. For the plasma-treated ACFs having a specific surface area of 1500 m² g⁻¹, the capacitance increased by 28% compared to the untreated sample and the highest electric capacitance value of 142 F g⁻¹ was achieved with an oxygen feed concentration of 10 vol.%. The Brunauer-Emmett-Teller (BET) surface area was 2103 m² g⁻¹, which was 34% higher than that of the untreated sample. The pore volume was similarly increased to 483.1 cm³ g⁻¹ STP, and from the pore distribution plot, quantities of mesopores of 10 nm or less and micropores also increased. However, in order to enhance the capacitance, the quinone functional group had a significant influence in addition to the BET surface area. The correlation between the capacitance and the number of quinone functional groups was confirmed because quinone is an electron acceptor.     

基于乘坐舒适、节能的电梯变频调速系统设计及实现

电梯作为高层建筑中大量使用的机电一体化设备,为了改善乘坐的舒适度、节能,电梯的控制系统中广泛使用交流变压变频调速,作为变压变频控制装置,变频器以其成熟的技术和可靠性被应用于电梯控制系统中,与其他类型交流调速系统相比具有运行效率高、节能效果显著,电梯运行乘坐舒适等优点。本文以日本富士电梯专用变频器5000G11UD为控制器,组成电梯变频调速系统,从理论上分析了实现电梯乘坐舒适、节能的控制关键点,并给出了实际操作方法,具体应用取得了较好的效果。     

一次低烧SrTiO3基晶界层电容器的研究

研究了以Ｌｉ２ＣＯ３为助烧结剂、Ｓｒ（Ｌｉ１／４Ｎｂ３／４）Ｏ３为施主掺杂剂、Ｂｉ２Ｏ３和ＳｉＯ２为晶界绝缘剂的ＳｒＴｉＯ３基晶界层电容器的一次低温烧成技术。初步探索了Ｔｉ／Ｓｒ比值、施主掺杂剂、绝缘剂对显微结构及介电性能的影响。在１１５０℃烧成温度下，获得了εａｐｐ〉３．５×１０＾４；ｐ〉１．０×１０＾１１Ω·ｃｍ；ｔｇδ〈１．０％；ΔＣ／Ｃ〈±５．０％（－２５￣＋８５℃）的ＳｒＴｉＯ３基晶界层     

制备工艺和添加剂对TiO2体系陶瓷的复合功能特性的影响

TiO2体系复合功能陶瓷是一种兼有压敏功能和介电性能的新型功能陶瓷材料,具有压敏电压低、非线性系数高、介电常数大等优点,在微小型电子设备与器件中有广泛的用途。本文从制备工艺、添加改性等方面分析了TiO2体系复合功能陶瓷的研究现状,并对其发展方向进行了展望。     

Activated carbon fiber cloths as electrodes for high performance electric double layer capacitors

Activated carbon fiber cloth (ACFC) electrodes with high double layer capacitance and good rate capability were prepared from polyacrylonitrile (PAN) fabrics by optimizing the carbonization temperature prior to CO₂ activation. The carbonization temperature has a marked effect on both the pore structure and the electrochemical performances of the ACFCs. Moderate carbonization at 600 °C results in higher specific surface area and larger pore size, and hence higher capacitance and better rate capability. The specific capacitance of the ACFCs in 6 mol L⁻¹ KOH aqueous solution can be as high as 208 F g⁻¹. It remains 129 F g⁻¹ as the current density increases to 10 000 mA g⁻¹.