Spidermen Strategy for Stable 24% Efficiency Perovskite Solar Cells

The interface energetics-modification plays an important role in improving the power conversion efficiency (PCE) among the perovskite solar cells (PSCs). Considering the low carrier mobility caused by defects in PSCs, a double-layer modification engineering strategy is adopted to introduce the “spiderman” NOBF₄ (nitrosonium tetrafluoroborate) between tin dioxide (SnO₂ and perovskite layers. NO⁺, as the interfacial bonding layer, can passivate the oxygen vacancy in SnO₂, while BF₄⁻ can optimize the defects in the bulk of perovskite. This conclusion is confirmed by theoretical calculation and transmission electron microscopy (TEM). The synergistic effect of NO⁺ and BF₄⁻ distinctly heightens the carrier extraction efficiency, and the PCE of PSCs is 24.04% with a fill factor (FF) of 82.98% and long-term stability. This study underlines the effectiveness of multifunctional additives in improving interface contact and enhancing PCE of PSCs.     

双循环策略下岸桥与跨运车的联合调度

集装箱码头采用跨运车能够减少作业环节和码头机械设备的种类与数量,同时缓存区容量的设置至关重要。首先,为降低码头总完工时间、提高码头作业效率,并解决采用跨运车作为水平运输设备与岸桥进行联合装卸作业时产生的时空协调问题,引入了双循环操作策略,对岸桥与跨运车的联合作业序列优化问题进行研究。其次,建立以总完工时间最小化为目标,考虑岸桥与跨运车双循环操作的实际约束、岸桥缓存区容量限制、安全时间等约束的混合整数规划模型。然后,针对传统禁忌搜索（TS）算法的局限性,加入贪婪算法、多种邻域搜索方式、响应性策略,设计了基于贪婪算法的响应性TS算法,并进行了数值实验。实验结果验证了所提模型与算法的有效性。最后,通过对缓存区容量与跨运车数量、岸桥与跨运车配比的实验分析,得出了最优的跨运车数量和缓存区容量、岸桥与跨运车配比。结果表明：与传统码头设备配置相比,双循环策略可减少跨运车使用数量,提高岸桥与跨运车使用率。     

材料饱和特性对永磁电机性能的影响研究

针对非晶材料饱和磁密低,非晶永磁电机性能易受铁心饱和作用影响的问题,本文提出了饱和磁密解析模型用以分析定子铁心齿部饱和作用产生的影响,该模型的特点是利用饱和前后气隙磁密的比率代替实验实测的电压比率求解出饱和系数,从而实现在电机初始设计阶段饱和效应对电机性能影响的分析与研究。基于该饱和磁路解析模型分析了定子铁心饱和对非晶永磁电机绕组电感、谐波电流以及逆变器供电情况下由载波引起的损耗的影响规律。     

一种基于Arnold置乱和DCT编码的无载体信息隐藏方法北大核心CSCD

近年来十分火热的搜索映射式无载体信息隐藏虽具有一定的鲁棒性,但其隐藏容量较低、传输负载大且算法复杂度高。针对以上问题,该文章提出一种基于Arnold置乱和离散余弦变换(discrete cosine transform,DCT)编码的无载体信息隐藏方法。该算法先对图片进行Arnold置乱,再对DCT后的低频系数进行编码,接着更换置乱参数来构建索引表。选择索引表中与秘密信息相同的编码值所对应的参数构建候选队列,最后筛选出鲁棒性强的参数作为密钥发送给接收方。实验结果表明,该方法与现有方法相比大大提高了嵌入容量,拥有更强的抗JPEG压缩性能。并且减少了传输负载,算法简捷,具有较强的应用价值。     

掺In碲镉汞的光学和电学性能研究

碲镉汞材料的电学、光学性能直接影响红外探测器的性能,掺杂是一种有效提高材料性能的手段,因此碲镉汞材料的相关掺杂研究至关重要。利用步进式扫描傅里叶红外调制光致发光(Fourier Transform Infrared Modulated Photoluminescence, FTIR-PL)测试仪对不同退火条件下的掺In碲镉汞材料进行了变温测试,降低了实验过程中的信噪比,获得了较好的光谱图。在此基础上结合霍尔测试结果,分析了由温度变化导致的能级位置变化以及不同退火条件处理后碲镉汞材料的发光峰强度和位置的变化。     

Effect of carrier screening on ZnO-based resistive switching memory devices

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10⁵ at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

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T型发射区单晶硅太阳电池的输出特性研究

利用TCAD半导体器件仿真软件对具有T型发射区结构的单晶硅太阳电池进行了仿真研究。全面系统地分析了在不同衬底少子寿命情况下,不同T型发射区深度对太阳电池外量子效率、短路电流密度、开路电压、填充因子及转换效率的影响。仿真结果表明:采用T型发射区结构可在一定程度上提高常规均匀发射区太阳电池的电学性能;T型发射区结构对700~1200nm长波段入射光的外量子效率具有明显的改善作用;当衬底少子寿命一定时,太阳电池短路电流密度、填充因子均随T型发射区深度的增大而增大,而开路电压随T型发射区深度的增大而减小;当T型发射区深度大于80μm时,对于低衬底少子寿命的单晶硅太阳电池,T型发射区结构对其转换效率的改善效果最为显著。