以有机化学课程内容为引导，加强课程思政的探索与实践

有机化学是化学化工、材料、制药、食品等多个专业的基础课程,在其教学过程中,教师可以根据课程的内容及特点,分别以有机化学发展中的重大历史事件、有机化物的性质及有机反应为引导,开展学生的思想品德教育,加强课程思政建设。     

论携号转网行为的私法规制

以电信用户入网协议为切入点,电信用户的携号转网行为应受到《合同法》《消费者权益保护法》等私法规范的保护与限制。该行为引起的格式条款解释、合同终止、违约责任、损失赔偿等问题,不能仅靠《电信条例》等公法规范来调整。应当积极引导广大消费者用户以私法领域相关规定为依据,转变争议解决思维,拓宽纠纷处理途径,合理选择维权手段,以保护自身合法民事权益,与行业监管部门共同推动电信行业有序发展。     

基于设备改造的选煤厂介质消耗控制研究

同忻选煤厂采用重介质选煤技术,磁性介质的消耗较大,为此,相关技术人员针对介质回收系统设备进行了改造设计。改造后,设备运行稳定,介质消耗降低,提高了原煤的分选效率,创造了较好的安全经济效益。     

Phase-composition dependent domain responses in (K0.5Na0.5)NbO3-based piezoceramics

Lead-free (K_0.5Na_0.5)NbO₃-based (KNN) piezoceramics featuring a polymorphic phase boundary (PPB) between the orthorhombic and tetragonal phases at room temperature are reported to possess high piezoelectric properties but with inferior cycling stability, while the ceramics with a single tetragonal phase show improved cycling stability but with lower piezoelectric coefficients. In this work, electric biasing in-situ transmission electron microscopy (TEM) study is conducted on two KNN-based compositions, which are respectively at and off PPB. Our observations reveal the distinctive domain responses in these two ceramics under cyclic fields. The higher domain wall density in the poled KNN at PPB contributes to the high piezoelectric properties. Upon cycling, however, a new microstructure feature, “domain intersection”, is directly observed in this PPB composition. In comparison, the off-PPB KNN ceramic develops large domains during poling, which experience much less extent of disruption during cycling. Our comparative study provides the basis for understanding the relation between phase composition and piezoelectric performance.     

剂油比对煤焦油沥青质加氢过程的影响

以中低温煤焦油沥青质为原料,采用NiMoW/γ-Al_2O_3商业催化剂,在反应温度380℃、反应压力8 MPa和反应时间1.5 h条件下,分别在不同剂油质量比(1∶25、1∶20、1∶15、1∶10)条件下进行加氢实验,通过采用元素分析、FT-IR、XRD、~1H-NMR和XPS等分析表征手段,考察不同剂油质量比对中低温煤焦油沥青质加氢转化过程的影响。结果表明,随着剂油质量比的增加,沥青质转化率提高,加氢产物分布也发生大幅变化,沥青质和芳香分轻质化转化为饱和分。但随着剂油质量比的进一步提高,同时也发生了更多的裂化反应和缩合反应,剂油质量比在合适范围能够很好地起到加氢轻质化且抑制结焦的效果。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.