Pool boiling on a superhydrophilic surface

Titanium Dioxide, TiO₂, is a photocatalyst with a unique characteristic. A surface coated with TiO₂ exhibits an extremely high affinity for water when exposed to UV light and the contact angle decreases nearly to zero. Inversely, the contact angle increases when the surface is shielded from UV. This superhydrophilic nature gives a self-cleaning effect to the coated surface and has already been applied to some construction materials, car coatings and so on. We applied this property to the enhancement of boiling heat transfer. An experiment involving the pool boiling of pure water has been performed to make clear the effect of high wettability on heat transfer characteristics. The heat transfer surface is a vertical copper cylinder of 17 mm in diameter and the measurement has been done at saturated temperature and in a steady state. Both TiO₂-coated and non-coated surfaces were used for comparison. In the case of the TiO₂-coated surface, it is exposed to UV light for a few hours before experiment and it is found that the maximum heat flux (CHF) is about two times larger than that of the uncoated surface. The temperature at minimum heat flux (MHF) for the superhydrophilic surface is higher by 100 K than that for the normal one. The superhydrophilic surface can be an ideal heat transfer surface. Copyright © 2002 John Wiley & Sons, Ltd.     

Effect of rare-earth doping on the electrical and photoelectrical properties of furazano [ 3,4-b] piperazine (FP) thin-film devices

Schottky diodes of rare-earth, praseodymium (Pr)-doped and samarium (Sm)-doped furazano [3,4-b] piperazine (FP), sandwiched between Al and indium-tin oxide (ITO) were made by a spin-coating technique. The diodes, in which doped FP behaves as a p-type organic semiconductor, exhibit rectification behaviour. The p-type semiconductivity and rectification properties of the devices improve with rare-earth doping. The electrical effects observed in these devices are explained in terms of the p-type semiconducting behaviour of the doped FP thin films and the formation of a blocking contact (Schottky barrier) with the Al electrode and ohmic contact with the ITO electrode. Various electrical parameters such as carrier mobility, position of Fermi level, free carrier concentration, trap density, trap level and conductivity of doped FP are calculated and discussed. It is found that the position of the Fermi level shifts toward the valence band on rare-earth doping; concentration of free carriers and carrier mobility increase on doping. From the capacitance-voltage (C-V measurements, various electrical parameters such as barrier height, density of ionized acceptor atoms and depletion layer width are calculated and discussed. From the action spectra and absorption spectra it is confirmed that the Al-doped FP interface forms a Schottky barrier and the ITO-doped FP interface shows ohmic contact. The photovoltaic measurement on the two devices reveals that the short circuit current, open circuit voltage, fill factor and power conversion efficiency increase on rare-earth doping.     

简并量子拍频三能级系统中的光场压缩效应

本文讨论了V-型简并量子拍频三能级原子与单模相干辐射场相互作用时的动力学行为，并研究了光场的压缩效应。     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

有机发光显示的几项新技术

有机发光显示(OLED)作为下一代显示器倍受关注。本文简要介绍OLED显示器的几项新技术和制作方法，以及其研究现状和今后的发展趋势。     

可见光共振腔发光二极管的研究进展

共振腔发光二极管是一种具有优良发光性能的光电器件。概述了对可见光共振腔发光二极管的共振腔结构、反射镜材料体系、基本工作机理和发光特性，并展望了这种器件的发展前景。     

测量输入光窗台阶指标的指示表的选择

阐述了对近贴聚焦型微通道板像增强管中输入光窗台阶高度和平整度指标进行测量时，所用指示仪表的选择依据，并详细分析了指示表在检定过程中的误差来源，进一步计算出其合成标准不确定度和扩展不确定度，从而选定可用于测试的指标表。     

轻型钢结构吊车梁设计方法及节点构造

通过分折和研究单层门式刚架轻型钢结构厂房中的吊车梁设计，总结了轻型钢结构吊车梁的设计方法和节点连接构造，对合理设计吊车梁，降低用钢量提出了设计建议。     

东濮凹陷马厂构造深层混源气藏气源探讨

根据东濮凹陷马厂深层气藏天然气常规组成、C1-C5单体气态烃碳同位素组成以及轻烃色谱指纹3方面微观信息的分析，并与文留气田文23井典型石炭系-二叠系煤成气以及白庙、刘庄、桥口煤成气-油型气混合天然气进行气／气对比，揭示了马厂深部气藏沙三段-沙四段天然气以煤成气为主，渗混入少量Es3-Es4油型气的混源特征，证实了东濮凹陷南部石炭系-二叠系煤系烃源岩具有一定煤成气供烃能力。