Fabrication and characteristics of tapes and test magnets made from Ag-Clad Bi-2223 superconductors

Pb_0.4Bi_1.8Sr₂Ca_2.2Cu₃O_x (Bi-2223) precursor powder was prepared by a solid-state reaction of carbonates and oxides of lead, bismuth, strontium, calcium, and copper, and the powder was then used to fabricate silver-clad tapes by the powder-in-tube technique. Transport critical current density (J_c) values>4×10⁴ A/cm² at 77K and 2×10⁵ A/cm² at 4.2 and 27K have been achieved in short tape samples. Long lengths of tape were tested by winding them into pancake coils. Recently, we fabricated a test magnet by stacking ten pancake coils, each containing three 16m lengths of rolled tape, and tested it at 4.2, 27 and 77K. A maximum generated field of 2.6 T was measured in zero applied field at 4.2K and the test magnet generated significant self-field in background fields up to 20 T. The results are discussed in this paper.     

Dependence of critical current density on microstructure and processing of high-Tc superconductors

Microstructural origins for reduced weak-link behavior in high-J_c melt-processed YBCO, spray pyrolyzed thick films of Tl-1223, metallic precursor Y-124 polycrystalline powder-in-tube (PIT) wires and PIT Bi-2212/2223 are discussed. Since the materials studied are the highest J_c, polycrystalline, high-T_c superconductors fabricated worldwide, the results provide important guidelines for further improvements in superconducting properties, thereby enabling practical applications of these materials. It is found that strongly linked current flow within domains of melt-processed 123 occurs effectively through a single crystal path. In c-axis oriented, polycrystalline Tl-1223 thick films, local in-plane texture has been found to play a crucial role in the reduced weak-link behavior. Formation of “colonies” of grains with a common c-axis and modest in-plane misorientation was observed. Furthermore, a colony boundary in general has a varying misorientation along the boundary. Large regions comprised primarily of low angle boundaries were observed. Percolative transport through a network of such small angle boundaries appears to provide the nonweak-linked current path. Although powder-in-tube BSCCO 2212 and 2223 also appear to have a “colony” microstructure, there are some important differences. Colonies in BSCCO consist of stacks of grains with similar c-axis orientation in contrast to colonies in Tl-1223 films where few grains are stacked on top of one another. Furthermore, most grains within a colony in BSCCO have the same lateral dimensions as that of the colony, resulting largely largely in “twist” boundaries. Further microstructural characterization of high-J_c PIT 2212 and 2223 is currently underway. In the case of Y-124 wires, weak macroscopic in-plane texture is found. Additional measurements are underway to determine if a sharper, local in-plane texture also exists. It is found that in three of the four types of superconductors studied, reduced weak-link behavior can be ascribed to some degree of biaxial alignment between grains, either on a “local” or a “global” scale.     

Analysis and optimisation of the HIPERLAN Channel Access Contention Scheme

This paper analyses the HIPERLAN channel access mechanism. Both a purely mathematical and a simulation model are built in order to evaluate the two successive phases of the contention scheme. Several optimisations, based on the choice of parametric values, are proposed, evaluated and compared.     

A Method of Combined SHPB Technique and BP Neural Network to Study Impact Response of Materials

Abstract:  A new method combining the split Hopkinson pressure bar (SHPB) technique with the back-propagation (BP) neural network program is proposed. By this method, the treated strain wave signals become smooth with less noises induced by the transverse inertia. Moreover, the dynamic rate-dependent constitutive behaviour of materials can be identified, without any pre-assumption of a constitutive model. It is found that by taking the experimentally measured data of strain, strain rate and time as 'input' and the corresponding data of stress as 'output' of the BP neural network, the dynamic constitutive behaviour with internal damage or phase transformation evolution is easy to be identified, where the time could represent either the internal damage evolution or phase transformation process accompanied with the deformation process. It is emphasised that the data learnt by the BP neural network must include both loading and unloading processes, if the whole loading and unloading response is to be correctly predicted. The comparisons between the predictions and experimental results are in good agreement for both polyamide (PA) polymer (as an example of nonlinear viscoelastic materials) and Ti–Ni alloy (as an example of superelastic materials with stress-induced phase transformation).     

Preparation and characterization of polyurethane microcapsules containing n‐octadecane with styrene‐maleic anhydride as a surfactant by interfacial polycondensation

A series of polyurethane microcapsules containing a phase change material (PCM) of n‐octadecane was successfully synthesized by an interfacial polymerization in aqueous styrene‐maleic anhydride (SMA) dispersion with diethylene triamine (DETA) as a chain extender reacting with toluene‐2,4‐diisocyanate (TDI). The average diameter of microPCMs is in the range of 5–10 μm under the stirring speed of 3000–4000 rpm. Optical and SEM morphologies of microPCMs had ensured that the shell was regularly fabricated with the influence of SMA. FTIR results confirmed that the shell material was polyurethane and the SMA chains associated on core material reacted with TDI forming a part of shell material. The shell thickness was decreasing in the range of 0.31–0.55 μm with the molar ratio of DETA/TDI from 0.84 to 1.35 and the weight of core material increasing from 40 to 80% (wt %). By controlling the weight ratio of PCM as 40, 50, 60, 70, and 80% in microPCMs, it was found using DSC that the T_m and T_c of microPCMs were in the range of 29.8–31.0^oC and 21.1–22.0°C and an obvious phase change had been achieved nearly the same temperature range of that of PCM. The results from release curves of microPCM samples prepared by 1.4, 1.7, and 2.0 g of SMA indicated the release properties were affected by the amount of the dispersant, which attributed to the emulsion effect and shell polymerization structure. The above results suggest that the shell structure of microPCMs can be controlled and the properties of microPCMs determined by shell will perform proper practical usage. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 102: 4996–5006, 2006     

高频地波雷达相位补偿系统

OSMAR2000采用的是“一发八收,收发共用”模式的相控阵高频地波雷达.为了扩大其探测的范围,在新的雷达系统中将采用多发多收的模式,从而导致当信号通过通道后,信号的相位会因受到通道的调制而发生改变,使得雷达无法正常工作,因此需要对通道的相位进行实时监控和补偿.在参考了低频段的相位测量原理和射频段的相移电路的设计理论的基础上,该文提出了基于差分放大器、容阻和容感器件的高频地波雷达收发通道的相位控制系统.     

大电流监测信号提取的光收发及信号处理

近年来,大电流的监测成了人们十分关心的问题,这是由于大电流有强磁、高压、电流大等一系列的直接监测所不能克服的问题。这就需要把高压大电流的强电信号,经过提取后变成能在实验室中直接观测的弱电信号。为此,如何从高压大电流的信号中提取出随实时信号变化而实时变化的小信号就变成了一个关键问题。详细介绍了监测信号提取的光收发电路原理和后续信号处理电路,分析了各部分的作用,给出了必要的分析结果。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

高功率双工旋转场移相器

旋转场移相器具有移相精度高(均方根误差可小于1°)和温度稳定性好等特点,通过改进射频传输结构,可大大提高他的功率容量。利用旋转场移相器的互易特性和铁氧体圆极化器的非互易特性,设计出高功率双工旋转场移相器。其双工特性可将收/发信号分开,实现移相器和环行器的双重功能,用于天线的收发通道等场合时,可省去一个高功率环行器,结构紧凑。分析了双工旋转场移相器的工作原理,阐述了高功率应用下的设计方法,推导出了管状铁氧体的相移量计算公式,按此方法设计了实用的器件,并给出了试验数据。     

电子电气设备的熔断器、断路器保护

熔断器、断路器是电子电气设备最常用的保护电器,熔断器可以实现过载、短路保护,断路器除具上述功能外,还能实行失压保护.根据线路特点和所保护的设备,采取相应的保护设施,确保用电安全.