Z900MCM综述

介绍了Z900 MCM设计和布局,可控塌陷芯片连接(C4)工艺在Z900 MCM组装中的应用。从设计上通过加入垂直电感器及去耦电容器减小其噪声。通过基板测试和功能测试,剔除有缺陷的基板和芯片。Z900 MCM采用先进的MCM—D技术和MCM返工及冷却技术。Z900 MCM平均无故障时间高达40年。     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

单螺杆挤出机—熔体泵串联挤出系统的性能与应用

从原理与应用方面，分析、探讨了单螺杆挤出机-熔体泵串联挤出系统的优异性能以及在塑料挤出成型领域的高效应用。     

液动旋冲接头冲击功测试方法研究

液动旋冲接头性能参数是旋冲接头设计的主要依据之一，如何对液动旋冲接头的参数进行检测是非常重要的工作。在分析和比较了测试液动旋冲接头性能参数各种方法的基础上，选择了冲击力法来进行破岩液动旋冲接头的性能参数测试，以YD系列测力传感器为检测元件，建立了一套比较完善的自动检测系统。分析了影响单次冲击功测试的因素，得出了测试旋冲接头的性能参数的影响规律。     

导流能力测试系统的研制

压裂后裂缝的导流能力直接关系着压裂缝的渗流能力，是客观评价压裂效果的重要指标之一。文章介绍了基于AT89C52单片机的导流能力测试系统的系统要求、测试原理以及其设计方案，阐述了各个测控通道，给出了测控系统电路方框图。     

ISD2500与ATmega8单片机配合使用的智能语音系统设计

提出了一种利用ATmega8单片机对ISD2500系列语音芯片进行控制的智能语音系统,此系统使用灵活,易于功能升级,具有良好的应用前景.提供了硬件连接电路和关键源程序.     

数控螺纹车削的单步插补控制法

分析了运动控制芯片MCX34的控制原理及单步插补实现过程，提出了基于运动控制芯片MCX314实现螺纹切削的单步插补控制法，从而实现快速，高效的螺纹加工。该方法控制过程简单 ，同步实现锥螺纹，控制精度高（0.001mm），响应快（≤1.6MHz)，脉冲确保不丢失，解决了数控螺纹车削存在的一系列关键问题。     

Adsorption and decomposition of H2S on Pd(1 1 1) surface: a first-principles study

Gradient-corrected density functional theory was used to investigate the adsorption of H₂S on Pd(1 1 1) surface. Molecular adsorption was found to be stable with H₂S binding preferentially at top sites. In addition, the adsorption of other S moieties (SH and S) was investigated. SH and S were found to be preferentially bind at the bridge and fcc sites, respectively. The reaction pathways and energy profiles for H₂S decomposition giving rise to adsorbed S and H were determined. Both H₂S_(ad) → SH_(ad) + H_(ad) and SH_(ad) → S_(ad) + H_(ad) reactions were found to have low barriers and high exothermicities. This reveals that the decomposition of H₂S on Pd(1 1 1) surface is a facile process.     

Bulk growth of Hg0.8Cd0.2Te single crystals by a combined CVT-seeding technique

The growth of high quality Hg_0.8Cd_0.2Te bulk single crystals by CVT, combined with an in-situ seeding technique, is reported here for the first time. For this purpose, a temperature difference of 590° → 540° C with a gradient of 40°-50° C/cm at the solid-vapor interface, and about 0.1 atm of HgI₂ as a transport agent, were employed. The bulk crystals have the expected stoichiometry and compositional homogeneity. Etch pit densities of 10⁴-10⁵ cm⁻² on the (111) face and hitherto unreported etch pits on the (100) face were observed in this work. Possible origins of the sub-grain structure are discussed.     

从数字看发展片式电容器面临的机遇与挑战

采用海关进、出口统计和行业生产统计资料,通过计算、分析,用数字来说明国内发展片式多层陶瓷电容器、片式钽电解电容器、片式铝电解电容器、片式有机薄膜电容器所面临的机遇与挑战,并对其国内市场需求总量、额,国产品在国内市场占有率等做出评估,为有关单位了解片式电容器的发展提供参考,为国产产品更有效地进入国内市场、促进其发展提供依据。