机加工孔套管抗挤压强度有限元分析

套管屈服强度直接影响套管抗挤压性能，套管在加工孔过程中可能诱发孔眼附近材料发生金属相变，导致套管屈服强度不再均匀分布，进而影响套管抗挤压强度。在相同工况下，对比了P110完整套管和机加工孔套管的抗挤压强度，以此为参照组分析了相变区域面积和相变区域屈服强度对机加工孔套管抗挤压强度的影响。结果表明，机加工孔会改变材料屈服强度，进而影响套管抗挤压性能。随金属相变区域屈服强度减小，机加工孔套管抗挤压强度减弱；当金属相变区域屈服强度增大时，机加工孔套管抗挤压强度增强。且机加工孔套管相变区域面积对机加工孔套管抗挤压强度的影响随相变区域屈服强度增加而逐渐削弱。     

Ni,Cr, and Fe surfaces corroded by molten ZnCl2

Understanding the corrosion of molten ZnCl₂ on metal surfaces is significant for the corrosion protection of metals, sustainable use of molten salts, preparation of ZnO coatings, and so on. In this paper, surfaces of pure Ni, Cr, and Fe corroded by molten ZnCl₂ were investigated. The results show that Ni suffered very slight corrosion, while Cr experienced more serious corrosion than Ni, but lighter corrosion than Fe. The morphology of the corrosion of Cr and Fe, respectively, presented pitting and intergranular corrosion characteristics. Furthermore, nanostructured ZnO coatings were obtained on the surfaces of Ni and Fe, but not on the surface of Cr. The ZnO coating on the Ni surface was doped with a small amount of Zn₅(OH)₈Cl₂, and the ZnO coating on the Fe surface was doped with ZnFe₂O₄ and Zn₂OCl₂. The coatings on the Ni and Fe surfaces had an average thickness of 1.5 and 50 μm, respectively.     

Structural,morphological, dielectric and magnetic properties of Zn-Zr co-doping yttrium iron garnet

In this study, yttrium iron garnet co-doped with Zn and Zr atoms with a chemical formula Y₃Zn_xZr_xFe_(5−2x)O₁₂ (x = 0.0-0.3) has been successfully prepared by the solid-state reaction method. The effects of doping concentration on the microstructure, crystal structure, magnetic properties, and dielectric properties of Y₃Zn_xZr_xFe_(5−2x)O₁₂ were investigated. The microstructure analysis indicates that co-doping of YIG with Zn and Zr can effectively reduce the grain size of the ceramic. The crystal structure results reveal that the doping concentration of Zn–Zr has substantial influence on the lattice parameters of YIG, such as, increases the lattice constant, crystal cell size, and interplanar spacing. However, the second phase of ZrO₂ appears once x ≥ 0.15. Additionally, the dielectric properties of YIG ferrite can be regulated using this Zn–Zr co-doping method. Zn–Zr co-doping can improve the dielectric stability and reduce the dielectric loss at high temperature. The magnetization measurement shows that the saturation magnetization is stabilized at x < 0.15, and the magnetic loss is decreased with the increase in the doping concentration. Overall, the findings show that the ceramic with x = 0.1 exhibits better properties included high saturation magnetization (24.607 emu/g), low magnetic loss (0.0025 @ 1 MHz), and relatively low dielectric loss (496 @ 400°C).     

Polymer hydrogel cross-linked by inorganic nanoparticles for removing trace metal ions

Hydrogels for absorbing metal ions in wastewater have attracted more attentions in the environmental field especially for recent years. The removal efficiency of hydrogel adsorbents for eliminating metal ions is highly related with the effective contact between adsorbents and adsorbates. However, poor water absorption capacity of the hydrogel adsorbents would restrict on the expose of adsorption sites to the targeted subjects, causing undesirable removal ratio (RR) especially for metal ions at trace level. Thereby, the reported hydrogel adsorbents mainly focus on the removal of high content but not the trace level of metal ions so far. In this work, poly(acrylamide) (PAM)/poly(acrylic acid) (PAA)/Ca(OH)₂ composite hydrogel is applied to adsorb trace metal ions. Swelling ratio of such PAM/PAA/Ca(OH)₂ gel reaches 2,530 g/g, resulting in effective exposure of active sites and further expected RR for trace metal ions. The RRs of such adsorbent for Cu²⁺ (initial concentration C₀ = 0.064 mg/L), Al³⁺ (C₀ = 0.27 mg/L), Co²⁺ (C₀ = 0.59 mg/L), Cr⁶⁺ (C₀ = 0.52 mg/L), Mn²⁺ (C₀ = 0.55 mg/L), Ni²⁺ (C₀ = 0.59 mg/L), Zn²⁺ (C₀ = 0.65 mg/L), Ag⁺ (C₀ = 1.08 mg/L), and La³⁺ (C₀ = 1.39 mg/L) are 56.6, 80.8, 41.3, 29.3, 34.6, 44.6, 55.9, 45.8, and 35.5%, respectively. This work broadens the application of hydrogel adsorbent for eliminating trace metal ions from polluted water.     

苏通GIL运输专用机具动力电池类型探讨

GIL运输专用机具是为安全、可靠、高效地完成苏通GIL综合管廊工程GIL单元的运输任务而研制的专用机具,其中动力电池系统设计是整机设计的重点之一。通过对各种常见动力电池优缺点的分析,并结合苏通GIL运输专用机具对动力电池的需求分析,确定了动力电池系统的技术路线,为苏通GIL运输专用机具的研制提供了坚实的基础。     

基于降噪时序深度学习网络的风电功率短期预测方法

利用风电场历史功率数据预测未来一段时间内的风功率,对保障电网安全稳定运行具有重要的意义。本文提出一种基于奇异谱分析SSA(singular spectrum analysis)和长短时记忆LSTM(long-short term memory net⁃work)网络的时序特征预测框架用于短期风功率的预测。首先通过SSA对历史风功率原始数据进行降噪处理,然后经过数据转换之后,以LSTM网络为基础进行预测模型的训练,最后通过某风电场提供的两个风机的历史功率数据进行验证。实验结果表明,奇异谱分析对风电场的历史数据具有良好的降噪性,SSA+LSTM模型在测试数据上取得了较好的预测性能,能够有效进行短期风功率的预测。     

A first-principles investigation on mechanical and metallic properties of titanium carbides under pressure

The titanium carbides are potential candidates to achieve both high hardness and refractory property. We carried out a structural search for titanium carbides at three pressures of 0 GPa, 30 GPa and 50 GPa. A phase diagram of the Ti-C system at 0 K was obtained by elucidating formation enthalpies as a function of compositions, and their mechanical and metallic properties of titanium carbides were investigated systematically. We also discussed the relation of titanium concentration to the both mechanical and metallic properties of titanium carbides. It has been found that the average valence electron density and tractility improved at higher concentrations of titanium, while the degree of covalent bonding directionality decreased. To this effect, the hardness of titanium carbide decreases as the content of titanium increases. Our results indicated that the titanium content significantly affected the metallic properties of the Ti-C system.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.