Pentacene/n-Si heterojunction diodes and photovoltaic devices investigated by I-V and C-V measurements

The forward and reverse current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of pentacene/n⁻-silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. Current rectification characteristics of the pentacene/n⁻-Si junctions can be explained by a Schottky diode model with an interfacial layer. The diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.79-1.0 eV and 2.4-2.7, respectively. The C-V analysis suggests that the depletion layer appears selectively in the n⁻-Si layer with a thickness of 1.47 μm from the junction with zero bias and the diffusion potential was estimated at 0.30 eV at the open-circuit condition. The present heterojunction allows the photovoltaic operation with power conversion efficiencies up to 0.044% with a simulated solar light exposure of 100 mW/cm².     

埋栅结构双极型静电感应晶体管动态特性的改善

双极型静电感应晶体管(BSIT)的失效经常出现在阻断态与导通态之间的瞬态过渡过程。因此,研究BSIT的开关动态过程的物理机理对于设计和制造高性能器件有着重要意义。本文深入研究了埋栅结构电力BSIT瞬态过程的动态特性,讨论了材料、几何结构与工艺参数对BSIT动态性能的影响。提出了一系列改善BSIT动态特性的工艺措施。     

Tuning the Intermolecular Electrostatic Interaction toward High-Efficiency and Low-Cost Organic Solar Cells

Organic solar cells (OSCs) have achieved much progress with rapidly increasing power conversion efficiencies (PCEs). It should be noted that the top-performance OSCs are generally consisted of active materials with complex chemical structures, resulting in high costs. Here, combining the material design and morphology control, high-efficiency OSCs are fabricated by a low-cost donor: acceptor blend. A completely non-fused electron acceptor named Tz is designed and synthesized via introducing thiazole units on both sides of a bithiophene core, which shows an outstanding PCE of 13.3% with a typical polythiophene donor. More importantly, optimization guidelines are presented to get excellent morphology for low-cost donor:acceptor systems. Three polythiophenes are selected, poly(3-hexylthiophene) and its two derivatives with electron-withdrawing substitutions (PDCBT and PDCBT-2F), as donors to fabricate the cell devices. The computational and experimental data reveal that decreasing the electrostatic interaction between polythiophene and Tz is the key to getting a suppressed miscibility and thus a high phase purity. This study provides insight into the molecular design and donor:acceptor matching requirements for high-efficiency and low-cost OSCs.     

视频传感器网络中路径覆盖增强算法研究

 基于方向可调感知模型,本文提出一种基于虚拟势场的路径覆盖增强算法(PFPCE).将待解决问题转化为质心点-运动轨迹点,质心点-质心点间虚拟力作用情况.仿真结果说明:PFPCE算法以较小代价获得视频传感器网络对路径的充分高效覆盖.     

Evaluation of solar energy potential and PV module performance in the Gobi Desert of Mongolia

Here, we present the results of evaluation of solar energy potential and photovoltaic (PV) module performance from actual data measured over a period of more than 2 years in the Gobi Desert of Mongolia. To allow estimation of solar energy potentials and durability of PV systems in the Gobi Desert area, a data acquisition system, including crystalline silicon (c‐Si), polycrystalline silicon (p‐Si) modules, and two sets of precision pyranometers, thermometers, and anemometer, was installed at Sainshand City in October 2002. This system measures 23 parameters, including solar irradiation and meteorological parameters, every 10 min. High output gain was observed due to operation at extremely low ambient temperatures and the module performance ratios (PRs) were high (>1·0) in winter. In summary, the present study showed that a PV module with a high temperature coefficient, such as crystalline silicon, is advantageous for use in the Gobi Desert area. Copyright © 2006 John Wiley & Sons, Ltd.     

基于西安地铁钢轨电位限制装置的研究

钢轨电位限制装置是地铁牵引供电系统的重要组成部分。本文以西安地铁二号线的钢轨电位限制装置为例,详细论述了其保护的种类、工作原理、各种保护的试验方法,并对两次典型故障进行了分析,详细描述了其现象与处理过程。     

外电场中1,4-二硝基咪唑-N-氧化物感度的理论研究

为探明外电场中炸药感度的变化规律,借助B3LYP/6-311++G(2d,p)和M06-2X/6-311++G(2d,p)理论方法,研究了外电场方向和强度的变化对1,4-二硝基咪唑-N-氧化物(1,4-DNIO)炸药潜在引发键的键长、硝基电荷、键离解能及撞击感度、静电火花感度和冲击起爆压力的影响。结果表明,在无电场和外电场作用下,N─NO2是最可能的引发键,其次是N→O,最后是C─NO2键。沿N→O、C─NO2键轴正方向和N─NO2负方向的外电场使N→O和C─NO2键离解能减小、N─NO2键离解能增大、H50增大、撞击感度降低;与上述反方向的外电场对引发键强度和撞击感度的影响正好相反。引发键键长、AIM电子密度、硝基电荷、键离解能和H50的变化量分别与外电场强度之间呈良好的线性关系,大多数情况下,相关系数R2>0.9500。外电场对电火花感度和冲击起爆压力的影响不大,外电场由-0.010 a.u.变化到0.010 a.u.,变化值分别小于0.5 J和0.15 MPa。     

海外援建类小型化卫星电视系统的发展——以乌兹别克输气管线项目为例

卫星电视系统对于距离城市较远的地方,例如矿山、气田等,是传递信息和丰富广大人民业余生活的重要渠道,并且还具有巨大的政治意义和宣传价值,该系统同样适用于很多较落后的第三世界国家或没有城市有线电视网的国家.在西气东输境外重点段乌兹别克C线段中,小型化卫星电视项目依托于全数字化的卫星电视接收,后端传输采用新型的信号切换方法.区别于原有楼宇大型的卫星电视系统,系统架构较为简单直接,信号流设计较为合理,施工难度较小,成本较低,在援建交付的三个站中反响良好,海外市场潜力巨大.     

PFMEA在SMT装配中的应用研究

SMT装配过程涉及多个设备和多道工序,工艺流程多样,为了保证SMT产品的质量与可靠性,需要采用科学的方法研究SMT装配过程。文章将PFMEA这一可靠性研究工具引入SMT装配过程,简介PFMEA的应用流程,并以单面贴装工艺漉程为例,说明应用PFMEA研究SMT装配过程的实施方法。     

基于Cortex-M3的电池内阻检测系统设计与实现

以电池为能源的各类电气设备,在工业生产、交通、军事、通信等领域广泛应用,电池性能对电子、电气设备的正常运行具有极其重要的作用。电池在使用过程中,其性能和容量会随充放电次数的增加而下降,所以,定期维护及检验电池性能,是保证电器设备可靠工作的重要内容。电池内阻是检验电池性能和容量的重要参数,通过内阻检测评估电池性能和容量参数,也是科学研究和工业应用的基本原理。电池内阻测量的常用方法一般采用电位差原理。但是,该测量方法对于大型设备的高容量电池存在测量误差大、发热、易损电池等弊端。本文采用基于Cortex-M3核32位微处理微计算机控制和电位差原理的智能内阻测量系统,实现了大容量电池的精确、快速、安全测量和高度智能化的故障诊断功能,具有重要的科学研究意义及实用价值。