High-pressure dc sputtering of High-Tc BPSCCO thin films withTc(0) above 100 K

High-T _c Bi(Pb)-Sr-Ca-Cu-O thin films have been made on single-crystal MgO substrates using high-pressure dc sputtering technique. X-ray studies confirm the crystallinity and highly oriented structure withc-axis perpendicular to the substrate. By optimizing the annealing schedule the formation of the high-T _c phase is stabilized. The best film exhibited superconducting transition temperature with zero-resistance temperature,T _c(0), as high as 101 K. Temperature dependence ofJ _c indicates the presence of Josephson-type weak links.     

马来酸及其酐和衣康酸与PP熔体接枝反应机理的研究

以马来酸酐作对照，用热分析、流变、化学分析等方法，研究了马来酸和衣康酸在非隔氧条件下与ＰＰ熔体催化接枝反应的特点和规律，阐述了单体结构－单元反应相对速率－－接枝产物结构之间的关系，提出了３种接枝物的结构模型。     

超声波对化学镀Ni－Cr－P非晶态薄膜的金刚石性能的影响

研究了超声波对化学镀Ｎｉ－Ｃｒ－Ｐ非晶态薄膜的金刚石性能的影响。结果表明，超声波可使金刚石表面非晶态薄膜更加均匀和致密，从而提高了抗压强度，氧化温度和晶化后的强度。随超声波频率的增加，金刚石性能有增加的趋势。     

氧化铝丝的研制

氧化铅丝生产过程中最关键的工艺是连续阳极氧化。氧化膜击穿电压决定于氧化膜厚度。控制膜厚度的三要素为:电解液(成份、浓度及温度),槽电压和铝丝走速。     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

精轧油膜轴承密封失效机理的初步分析

对油膜轴承密封出现的进水、漏油现象作了大量的调查、测量和统计分析，找出了产生质量事故的根本原因，提出了解决措施。     

薄膜磁头磁轭制备工艺研究

本文重点讨论了用不同的工艺方法来制备薄膜磁头中的关键元件-磁轭。采用多次光刻的方法克服湿法工艺中磁性膜NiFe层的侧向钻蚀问题，从而实现对磁轭几何尺寸的精确控制，并对几种工艺方法的优缺点作了比较详细的分析。     

用于多种组装技术的厚膜导体复合结构

厚膜导体Ｐｄ－Ａｇ／Ａｕ、Ｐｔ－Ｐｄ－Ａｕ／Ａｕ平面复合结构，Ｐｄ－Ａｇ／Ａｕ立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻，减少线损耗。而且，其超声键合性尤佳     

Photo-reversible Reaction in Polymer Langmuir-Blodgett Films

Preparation of photoreactive Langmuir-Blodgett (LB) films was carried out using polymers/oligomers prepared from long-chain dialkyl esters of di-and tetra-olefins and having cyclobutane rings in the main chain. These polymers/oligomers formed stable monolayers on a water surface when mixed with arachidic acid. These monolayers could be deposited onto a substrate successfully forming Y-type films. The oligomer LB films were polymerized on irradiation. The polymer LB films showed a photo-reversible process between polymers and oligomers, depending on wavelength of the irradiating light. On the basis of spectral data and molecular weight change, this behaviour was found to be caused by cleavage and formation of cyclobutane rings.     

Modification of poly(N-vinyl-carbazole) thin films by bromine doping

Poly(N-vinyl-carbazole) (PVK) thin films doped with bromine has been studied by scanning electron microscopy, X-ray diffraction, infrared absorption, X-ray photoelectron spectroscopy (XPS), electron spin resonance (ESR), optical transmission (visible, near ultra violet) and conductivity measurements. The polymer has been doped at room temperature and at 373 K. It is shown by ESR, XPS and optical measurements that a charge transfer complex (CT-complex) is formed between PVK and Br. However, if some bromine acts as dopant of the polymer there is another bromine contribution, which corresponds to bromine covalently bonded to PVK and some only adsorbed. It is also shown by ESR that there is not only polymer doping by bromine but also some partial polymer degradation. Therefore, it can be said that the optimum doping condition of PVK thin films with bromine has been shown to be room temperature post-doping.