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81.
构建一种基于氧化石墨烯/聚吡咯-铟锡氧化物GO/PPy-ITO(Graphene Oxide/Polypyrrole-Indium Tin Oxide)微电极的细胞阻抗生物传感器并用于细胞粘附增殖行为学检测。ITO微电极采用光刻技术对感光干膜绝缘层蚀刻而成,通过一步法电聚合技术在ITO微电极表面沉积GO/PPy纳米复合膜制备GO/PPy-ITO微电极;形状测量激光显微镜和扫描电子显微镜分别对GO/PPy表面粗糙度和拓扑形貌进行表征;电化学循环伏安法及阻抗谱表征GO/PPy-ITO微电极的电化学性质;人肺癌细胞株A549粘附、铺展和增殖实验考察GO/PPy界面的生物相容性;以GO/PPy-ITO微电极作为传感电极,利用电化学阻抗谱技术对A549细胞的粘附增殖行为进行检测。结果显示,ITO微电极表面上电沉积的GO/PPy纳米复合物表面平整,分布大量的微孔结构;电化————————————学实验结果显示GO/PPy-ITO微电极比裸ITO微电极具有更低的阻抗特征和更高的电化学活性;GO/PPy比纯PPy膜更能促进A549细胞粘附、铺展和增殖;GO/PPy-ITO微电极表面A549细胞的粘附增殖行为改变电极系统的阻抗谱特征,通过对阻抗谱数据进行等效电路拟合分析获得细胞粘附增殖行为学信息。本文发展的GO/PPy-ITO微电极兼具优良的电化学性质和细胞生物相容性,基于该电极系统构建的细胞阻抗生物传感器可用于细胞病理生理学行为、药物筛选等研究领域。  相似文献   
82.
In this letter, solution‐processed flexible zinc‐tin oxide (Z0.35T0.65O1.7) thin‐film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra‐thin (30 µm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm2/V · s after annealing at 300 °C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra‐thin polyimide substrate.  相似文献   
83.
商朝是中国青铜时代的鼎盛时期,以青铜制作的器具众多,其中不乏大量的酒器,从酒器的造型与纹饰可以反应出商当时的一个社会文化背景,即商人好酒。  相似文献   
84.
商代的器物艺术主要以青铜器为代表,本文从构图方式,虚实关系和结构线的变化三个方面,对商中后期的青铜器艺术进行分析。  相似文献   
85.
Two novel transition metal-doped tungsten bronze oxides, Pb2.15Li0.85Nb4.85Ti0.15O15 (PLNT) and Pb2.15Li0.55Nb4.85W0.15O15 (PLNW), are synthesized by high-temperature solid-state reactions. The Rietveld method using the high-resolution synchrotron radiation indicates that PLNT and PLNW crystallize in the orthorhombic polar noncentrosymmetric space group, Pmn21 (no. 31). As a class of tungsten bronze oxide, PLNT and PLNW retain a unique rigid framework composed of d0 transition metal cation (Ti4+ or W6+)-doped highly distorted NbO6 octahedra along with the subsequently generated Pb/LiO12 and PbO15 polyhedra. Interestingly, the d0 transition metal-doped tungsten bronzes, PLNT and PLNW, exhibit extremely large second-harmonic generation (SHG) responses of 56 and 67 × KH2PO4, respectively. The observed immeasurably strong SHG is mainly attributed to a net polarization originating from the alignment of highly distorted NbO6 octahedra with doped transition metals in the frameworks. It is believed that doping transition metal cations at the B-site of the tungsten bronze structures should be an innovative strategy to develop novel high-performance nonlinear optical materials.  相似文献   
86.
吸波体是一种带有损耗特性的周期结构,能够吸收电磁波,将电磁能转化为热能,降低反射的电磁波能量。随着应用场景的特殊化,吸波体朝着特殊领域、特定功能、更具针对性的方向发展。由于各类含有光学窗口的应用环境对抗电磁干扰需求的不断提高,吸波体光学透明化成为研究的重点方向。为了对透明吸波体的发展状况有系统的认识,文章以制造材料为脉络梳理了近年来可见光透明吸波体的研究现状,包括氧化铟锡(ITO)、金属网栅、石墨烯等,综述了以它们为材料制备的透明吸波体优缺点以及发展趋势,最后对透明吸波体的未来发展进行了展望。  相似文献   
87.
2D electrode materials with layered structures have shown huge potential in the fields of lithium‐ and sodium‐ion batteries. However, their poor conductivity limits the rate performance and cycle stability of batteries. Herein a new colloid chemistry strategy is reported for making 2D ultrathin layered SnSe nanoplates (SnSe NPs) for achieving more efficient alkali‐ion batteries. Due to the effect of weak Van der Waals forces, each semiconductive SnSe nanoplate stacks on top of each other, which can facilitate the ion transfer and accommodate volume expansion during the charge and discharge process. This unique structure as well as the narrow‐bandgap semiconductor property of SnSe simultaneously meets the requirements of achieving fast ionic and electronic conductivities for alkali‐ion batteries. They exhibit high capacity of 463.6 mAh g−1 at 0.05 A g−1 for Na‐ion batteries and 787.9 mAh g−1 at 0.2 A g−1 for Li‐ion batteries over 300 cycles, and also high stability for alkali‐ion batteries.  相似文献   
88.
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics.Monolayer SnS2,with a band gap of ~2.6 eV,has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin.Till date,there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor.Here,we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity.In addition,the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time.Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers.The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%,suggesting promise for optoelectronic applications.  相似文献   
89.
90.
An efficient photoanode based on CdS nanorod@SnO2 nanobowl (CdS NR@SnO2 NB) arrays is designed and fabricated by the preparation of SnO2 nanobowl arrays via nanosphere lithography followed by hydrothermal growth of CdS nanorods on the inner surface of the SnO2 nanobowls. A photoelectrochemical (PEC) device constructed by using this hierarchical CdS NR@SnO2 NB photoanode presents significantly enhanced performance with a photocurrent density of 3.8 mA cm?2 at 1.23 V versus a reversible hydrogen electrode (RHE) under AM1.5G solar light irradiation, which is about 2.5 times higher than that of CdS nanorod arrays. After coating with a thin layer of SiO2, the photostability of the CdS NR@SnO2 NB arrays is greatly enhanced, resulting in a stable photoanode with a photocurrent density of 3.0 mA cm?2 retained at 1.23 V versus the RHE. The much improved performance of the CdS NR@SnO2 NB arrays toward PEC hydrogen generation can be ascribed to enlarged surface area arising from the hierarchical nanostructures, improved light harvesting owing to the NR@NB architecture containing multiple scattering centers, and enhanced charge separation/collection efficiency due to the favorable CdS–SnO2 heterojunction.  相似文献   
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