Possible tactics to improve the growth of single-walled carbon nanotubes by chemical vapor deposition

The growth time, growth mode and the method of preparing the supported catalysts play an important role in the growth of single-walled nanotubes (SWNTs). Their effects on the chemical vapor deposition (CVD) growth of SWNTs with MgO-supported catalysts were investigated in this study. It is shown that the growth rate of SWNTs was large during the initial few minutes of growth, however the quality of the tubes was low owing to the formation of many defects. Long term growth may favor the formation of tubes with high quality and high yield, but the introduction of other forms of carbon (impurities) is also unavoidable. There was a balance between the increase in yield and quality and sacrifice of the purity during growth of SWNTs. MgO-supported catalysts prepared by the co-precipitation method were found to be more effective for the synthesis of SWNTs than those prepared by the widely used impregnation method. The size and dispersion state of the catalyst were found to be crucial in enhancing the growth of SWNTs. In addition, growth on the surface of SWNTs over nanosized catalyst films was shown to be more favorable for the synthesis of tube products with higher quality, yield and purity.     

光纤制备中的外汽相沉积工艺研究

人们对光纤生产过程中外汽相沉积(OVD)工艺的沉积机理的研究已经有好多年，但实际生产过程中，很多因素都会影响沉积速率和效率。为此我们通过试验，研究了决定沉积速率和沉积效率的主要因素，如预制棒表面温度、SiCl4流量和SiO2颗粒的温度等。     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

整体毡纤维体积分数对CVD增密的影响

将3组不同纤维体积分数的整体毡采用等温CVD进行沉积热解炭增密,结合CVD沉积过程中整体毡内气体传质数学模型,研究了整体毡的纤维体积分数对CVD增密过程的影响,研究结果表明:纤维体积低的整体毡沉积时增重率高;纤维体积分数高的整体毡容易获得较高密度的C/C复合材料;纤维体积分数超过35％的整体毡经过300 h的化学气相沉积,坯体的体积密度能达到1.52 g/cm~3。     

Computations of Explosive Boiling in Microgravity

Dynamics of the explosive growth of a vapor bubble in microgravity is investigated by direct numerical simulation. A front tracking/finite difference technique is used to solve for the velocity and the temperature field in both phases and to account for inertia, viscosity, and surface deformation. The method is validated by comparison of the numerical results with the available analytical formulations such as the evaporation of a one-dimensional liquid/vapor interface, frequency of oscillations of capillary waves, and other numerical results. Evolution of a three-dimensional vapor nucleus during explosive boiling is followed and a fine scale structure similar to experimental results is observed. Two-dimensional simulations yield a similar qualitative instability growth.     

盐和水蒸气协同作用下TiAl合金腐蚀性能研究及其防护

研究了在700℃盐和水蒸气协同作用下TiAlNb合金的腐蚀行为以及溅射涂层对TiAlNb合金的防护作用。结果表明，在盐和水蒸气协同作用下，溅射TiAlCrAg涂层对TiAlNb合金具有一定的保护作用。盐和水蒸气协同作用加速了合金以及涂层的腐蚀。挥发性气体氯化物对α2相的循环作用是TiALNb合金腐蚀的主要原因。涂层中较少的α2相以及Laves相中较高的Cr含量是腐蚀有所减缓的主要原因。     

碳化硅加热元件的电性能和使用

本文介绍碳化硅加热元件的电特性、表面负荷以及工作气氛对它的影响，并对它设计和使用要点举例予以说明。     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

AlN 粉末制备的热力学分析和实验研究

对制备 AlN 的体系 AlCl_3-NH_3-N_2进行了热力学分析,确立了 AlN 粉末合成所需要的热力学条件.在700～1000℃下,利用无水 AlCl_3和 NH_3的化学气相淀积反应合成得到了高纯 AlN 超细粒子粉末,研究了反应温度、AlCl_3浓度和总流量等对 AlN 粉末理化性质的影响.实验确立了产物低温和高温热处理条件.