焦化加热炉爆管故障分析与预防

焦化加热炉炉管内的物料通常为有杂质容易结焦的混合渣油,如果设计不合理、操作控制不当、运行周期过长等,极易造成炉管爆管事故。以2005年9月大庆石化分公司炼油厂焦化加热炉爆管故障为例,阐述了焦化加热炉的爆管原因、故障处理及预防措施,认为注水量小、渣油中含催化剂、负荷偏离设计工况、烧焦周期和烧焦速度不当等引起严重结焦是爆管的主要原因。     

Possible tactics to improve the growth of single-walled carbon nanotubes by chemical vapor deposition

The growth time, growth mode and the method of preparing the supported catalysts play an important role in the growth of single-walled nanotubes (SWNTs). Their effects on the chemical vapor deposition (CVD) growth of SWNTs with MgO-supported catalysts were investigated in this study. It is shown that the growth rate of SWNTs was large during the initial few minutes of growth, however the quality of the tubes was low owing to the formation of many defects. Long term growth may favor the formation of tubes with high quality and high yield, but the introduction of other forms of carbon (impurities) is also unavoidable. There was a balance between the increase in yield and quality and sacrifice of the purity during growth of SWNTs. MgO-supported catalysts prepared by the co-precipitation method were found to be more effective for the synthesis of SWNTs than those prepared by the widely used impregnation method. The size and dispersion state of the catalyst were found to be crucial in enhancing the growth of SWNTs. In addition, growth on the surface of SWNTs over nanosized catalyst films was shown to be more favorable for the synthesis of tube products with higher quality, yield and purity.     

光纤制备中的外汽相沉积工艺研究

人们对光纤生产过程中外汽相沉积(OVD)工艺的沉积机理的研究已经有好多年，但实际生产过程中，很多因素都会影响沉积速率和效率。为此我们通过试验，研究了决定沉积速率和沉积效率的主要因素，如预制棒表面温度、SiCl4流量和SiO2颗粒的温度等。     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

基于ADμC834芯片热泵热水机组控制器的研制

热泵热水机组是一种新型热水和供暖产品,它可以从空气、水等环境中吸取能量,热效率高,被公为是传统锅炉、电热水器及燃油(气)热水机组的更新换代环保型产品。详细阐述了以ADμC834芯片为核心的热泵热水机组控制器软硬件系统设计。论述了多路温度数据与压力数据采集、液晶显示等模块的硬件组成及各个模块的工作原理。控制器的软件系统采用前后台架构,用QuickStart平台开发完成。其人机界面系统由按键阵列和TG2401286V2型液晶显示屏组成。     

整体毡纤维体积分数对CVD增密的影响

将3组不同纤维体积分数的整体毡采用等温CVD进行沉积热解炭增密,结合CVD沉积过程中整体毡内气体传质数学模型,研究了整体毡的纤维体积分数对CVD增密过程的影响,研究结果表明:纤维体积低的整体毡沉积时增重率高;纤维体积分数高的整体毡容易获得较高密度的C/C复合材料;纤维体积分数超过35％的整体毡经过300 h的化学气相沉积,坯体的体积密度能达到1.52 g/cm~3。     

Computations of Explosive Boiling in Microgravity

Dynamics of the explosive growth of a vapor bubble in microgravity is investigated by direct numerical simulation. A front tracking/finite difference technique is used to solve for the velocity and the temperature field in both phases and to account for inertia, viscosity, and surface deformation. The method is validated by comparison of the numerical results with the available analytical formulations such as the evaporation of a one-dimensional liquid/vapor interface, frequency of oscillations of capillary waves, and other numerical results. Evolution of a three-dimensional vapor nucleus during explosive boiling is followed and a fine scale structure similar to experimental results is observed. Two-dimensional simulations yield a similar qualitative instability growth.     

盐和水蒸气协同作用下TiAl合金腐蚀性能研究及其防护

研究了在700℃盐和水蒸气协同作用下TiAlNb合金的腐蚀行为以及溅射涂层对TiAlNb合金的防护作用。结果表明，在盐和水蒸气协同作用下，溅射TiAlCrAg涂层对TiAlNb合金具有一定的保护作用。盐和水蒸气协同作用加速了合金以及涂层的腐蚀。挥发性气体氯化物对α2相的循环作用是TiALNb合金腐蚀的主要原因。涂层中较少的α2相以及Laves相中较高的Cr含量是腐蚀有所减缓的主要原因。     

Growth and characterization of GaSb bulk crystals with low acceptor concentration

GaSb bulk single crystals with low acceptor concentration were grown from a bismuth solution by the traveling heater method. The result is isoelectronic doping by Bi which gives a variation of the opto-electronic properties as a function of grown length as well as a pronounced microscopic segregation. Photoluminescence spectra at 4K show a decrease of the natural acceptor during growth, which is confirmed by Hall measurements. The electrical properties of this isoelectronic doped GaSb are hole concentrations and mobilities of N_A − N_D = 1.7 × 10¹⁶ cm⁻³ and μ = 870 cm²Vs at room temperature and N_A-N_D = 1 × 10¹⁶ cm⁻³ and μ = 4900 cm²/Vs at 77K, respectively. The lowest p-type carrier concentration measured at 300K is N_A − N_D = 3.3 × 10¹⁵ cm⁻³