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131.
The dielectric breakdown of thin (d = 3–4 nm) aluminium and tantalum oxide films was investigated by means of current voltage plots in metal/insulator/metal systems. Dielectric breakdown field strengths, EDB, of 0.6 GV m− 1 were found for both oxide types at room temperature. Differences appear in the temperature dependence of EDB. Tantalum oxide films show an unchanged breakdown behaviour for temperatures up to 420 K while aluminium oxide films lose already 80% of their EDB value in the same temperature range. Time-resolved investigations of the electric breakdown revealed intermediate states of both oxide types which were stable for several ms being characterized by an enhanced tunnel current. The breakdown voltage clearly scales with the oxide thickness for both oxide types.  相似文献   
132.
Water-filled aluminum tubes were subjected to impact by six steel spherical projectiles of different diameters at impact velocities of 40–200 m/s. The effects of the diameter of the steel projectiles and of the material properties of the tubes on cracking and perforation were discussed. Water decreased the wall strength of the aluminum alloy tubes, and the impact velocity at which a steel projectile first passes through the tube wall decreased with increasing diameter of the steel projectile. Using the velocity at which the steel projectile perforates the tube wall, empirical equations of the energies required to perforate the tube wall were derived. Also, the energy balance in the steel projectile during a collision is discussed referring to the pressure history in the filled water and the velocities of the steel projectile before and after collision.  相似文献   
133.
134.
Alumina coatings on aluminum alloy were prepared by micro-arc oxidation (MAO) process using DC and AC power supplies, respectively. In comparison with the coating deposited by DCMAO, the influence of the cathodic current on the composition, structure and properties of the ACMAO coating was investigated. It is found that the coating deposited by DCMAO is composed of α-Al2O3, whereas the coating deposited by ACMAO has a mixture composition of α-Al2O3 and γ-Al2O3. The results of properties show that compared with the coatings deposited by DCMAO, the ACMAO coatings possess higher density, hardness and corrosion resistance. It can be attributed to that the DCMAO coating is rougher and existing much more micro-cracks in its inner layer. As a result, the adhesion of the DCMAO coating to the substrate decreases.  相似文献   
135.
Amorphous dihalonaphthalenes that are prepared by vacuum deposition onto a cold Al2O3 surface form electronically excited dimers when optically pumped, and their emission is characteristically red-shifted, broad and featureless compared to the monomeric fluorescence. If the surface is heated, the adlayer undergoes a disorder-to-order transition at a temperature characteristic of the molecule. Since pure crystalline dihalonaphthalenes typically fluoresce and do not exhibit excimeric features, the transition was studied by taking advantage of the changes in the spectral characteristics of the adlayer. These included transmittance, and emission from fluorescence and excimer. The combination of these methods allowed a close look at the surface dynamics of molecules on the surface of Al2O3 as the adlayer was heated from the deposition temperature to desorption.If a bilayer is formed by depositing water onto the surface with the organic adlayer on top, water, with its lower desorption energy, can be made to percolate into the organic layer. The optical probes indicate that the water clearly associates with the organic molecules while the excess water desorbs. By varying the coverage of either the water or the dihalonaphthalene, the stoichiometric composition of the cluster can be determined and are reported here.  相似文献   
136.
D.Q. Peng  X.D. Bai  H. Sun 《Vacuum》2006,80(6):530-536
The beneficial effect of aluminum ion implantation on the oxidation behavior of ZIRLO alloy at 500 °C has been studied. ZIRLO alloy specimens were implanted with aluminum ions with fluence range from 1×1016 to 1×1018 ion/cm2, using a MEVVA source at an extraction voltage of 40 kV at maximum temperature of 380 °C. The weight gain curves were measured after being oxidized in the air at 500 °C for 120 min, which showed that a significant improvement was achieved in the oxidation behavior of ZIRLO alloy implanted with aluminum compared with that of the virgin ZIRLO alloy. It has been obviously found that when the fluence is 1×1018 ion/cm2, the oxidization of the implanted ZIRLO alloy is reduced into 30% of the virgin ZIRLO alloy.  相似文献   
137.
The metalorganic chemical vapor deposition of aluminum oxide has been studied over a wide process parameter range. Electrical properties of as-grown and annealed layers have been investigated using planar aluminum/aluminum oxide/silicon capacitors. The best processing conditions resulted in a leakage current of 10 nA/cm2 at an equivalent oxide thickness of 3.6 nm. In addition, the film conformality was evaluated on silicon trench structures with aspect ratios of up to 60. Excellent step coverage of over 90% (thickness at trench bottom to thickness at trench middle) was achieved at temperatures below 400 °C and a pressure of 100 Pa. After annealing the electrical properties of these layers, analyzed on planar test structures, were comparable to the results obtained at higher deposition temperature.  相似文献   
138.
The fabrication of silicon based micromechanical sensors often requires bulk silicon etching after aluminum metallization. All wet silicon etchants including ordinary undoped tetramethyl ammonium hydroxide (TMAH)-water solution attack the overlaying aluminum metal interconnect during the anisotropic etching of (100) silicon. This paper presents a TMAH-water based etching recipe to achieve high silicon etch rate, a smooth etched surface and almost total protection of the exposed aluminum metallization. The etch rate measurements of (100) silicon, silicon dioxide and aluminum along with the morphology studies of etched surfaces are performed on both n-type and p-type silicon wafers at different concentrations (2, 5, 10 and 15%) for undoped TMAH treated at various temperatures as well as for TMAH solution doped separately and simultaneously with silicic acid and ammonium peroxodisulphate (AP). It is established through a detailed study that 5% TMAH-water solution dual doped with 38 gm/l silicic acid and 7 gm/l AP yields a reasonably high (100) silicon etch rate of 70 μm/h at 80 °C, very small etch rates of SiO2 and pure aluminum (around 80 Å/h and 50 Å/h, respectively), and a smooth surface (±7 nm) at a bath temperature of 80 °C. The etchant has been successfully used for fabricating several MEMS structures like piezoresistive accelerometer, vaporizing liquid micro-thruster and flow sensor. In all cases, the bulk micromachining is carried out after the formation of aluminum interconnects which is found to remain unaffected during the prolonged etching process at 80 °C. The TMAH based etchant may be attractive in industry due to its compatibility with standard CMOS process.  相似文献   
139.
刘金合  胡美娟  王辉 《核技术》2006,29(2):133-135
针对SiCp/6061Al型复合材料进行了真空电子束焊接的初步探讨.试验结果表明:电子束电流越大,熔深越深;焊接速度越快,熔深越小;焊接过程中SiC颗粒会与液态铝发生界面反应,生成脆相Al4C3;镁元素的气化易导致焊缝气孔的生成.  相似文献   
140.
有机溶剂分离法处理废旧锂离子电池   总被引:10,自引:0,他引:10  
针对现有废旧锂电池回收钴金属工艺中铝钴分离的问题,采用特定的有机溶剂分离法,使锂电池正极材料中的钴酸锂从铝箔上溶解下来,直接分离钴酸锂和铝箔,铝箔经清洗后直接回收,所用的有机溶剂通过蒸馏方式脱除粘结剂,实现循环使用。该工艺简化废旧锂电池正极材料的回收处理工艺流程,有效地回收钴与铝。  相似文献   
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