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31.
主要探讨了某石化装置蒸汽发生系统的仪表工程设计,提出了复杂控制方案、联锁方案设计,同时也详述了影响系统设计的因素,如测量补偿和迁移等。 相似文献
32.
基于无源腔的Q值定义,根据能量守恒原理,对连续波腔衰荡技术测量原理进行了推导,并基于多光束干涉理论,就入射光关断时间对腔出射光强信号衰荡线形及测量结果的影响进行了数值模拟和分析,分析表明:入射光的关断时间很大程度上决定着腔出射光功率信号的衰减线形,如果要消除入射光关断时间对测量结果的影响,入射光关断必须小于腔衰荡时间的1%。根据理论分析要求建立了一套测量系统,并对腔损耗约为50ppm的低损无源腔进行了实际测量,实验结果的分析显示,该测量系统测量误差约为0.15ppm。 相似文献
33.
Recently, preemption techniques have attracted considerable attention as a means to provide differentiated quality of service
in optical burst switching (OBS) networks. This paper is focused on the analysis of preemption probabilities for bursts within
the same priority class. As proposed by Vokkarane and Jue ((2003)* IEEE J Select Areas Commun 21(7): 1198–1209) an incoming
burst will preempt the burst in service, within the same priority class, if the residual length of the burst in service is
smaller than the incoming burst length. For a general case with wavelength conversion, the preemption probability of contending
bursts with a generic service distribution, not necessarily exponential, is analyzed. First, we show that the size distribution
for the preempting bursts is shifted to larger values, in comparison to the original burst size distribution. Second, we obtain
an upper and lower bound for the preemption probability. Finally, the asymptotic behavior of the OBS switch is analyzed showing
that preemption will always occur for a very large number of wavelengths. 相似文献
34.
We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (Tsub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH4 in the gas phase (relative to the total GeH4+SiH4 flow). 相似文献
35.
36.
A.L. Pan H.G. ZhengZ.P. Yang F.X. Liu Z.J. Ding Y.T. Qian 《Materials Research Bulletin》2003,38(5):789-796
Small Ag particles or clusters dispersed mesoporous SiO2 composite films were prepared by a new method: First the matrix SiO2 films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO3 solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO2 films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements. 相似文献
37.
38.
ZHAOJi-jun JIYue-feng XUDa-xiong 《半导体光子学与技术》2003,9(3):141-147
In last decade,due to that the popularity of the internet, data--central traffic kept growing, some emerging networking requirements have been posed on the today‘s telecommunication networks,especially in the area of network survivability. Obviously, as a key networking problem, network reliability will be more and more important. The integration of different technologies such as ATM, SDH, and WDM in multilayer transport networks raises many questions regarding the coordination of the individual network layers.This problem is referred as multilayer network survivability. The integrated multilayer network survivability is investingated as well as the representation of an interworking strategy between different single layer survivability schemes in IP via generalized multiprotocol label switching over ootical netwnrk 相似文献
39.
Optical packet assembly is a key function to support inter-working between TCP/IP networks and optical packet-switched networks.
It is characterized by the assembly delay and by the segment aggregation needed to form an optical packet. These counter-balancing
aspects depend on several environment variables, such as the TCP parameters, the access link speed, the optical packet size
whose effects are studied in this paper. Performance evaluations are obtained by extensive simulations in terms of send rate
of TCP flows, fairness, efficiency, and assembly delay. Some guidelines in the design of optical packets that take into account
the results presented are given. 相似文献
40.
Peter V. Sushko Alexander L. ShlugerKatsuro Hayashi Masahiro HiranoHideo Hosono 《Thin solid films》2003,445(2):161-167
Recently it has been discovered that a nano-porous main group oxide 12CaO·7Al2O3 (C12A7) can be converted from a wide-gap insulator to a good transparent conductor. Using ab initio modelling we explain good conductivity of this material by very small barriers for hopping of localised electrons between neighbouring positive cages. We show that optical absorption of C12A7 in infrared region and at energies higher than 2.7 eV is due to inter-cage and intra-cage electron transitions, respectively. The proposed mechanisms can be useful in further search for conducting transparent media. 相似文献