枪械振动测试用光电六维位移传感器的设计

枪械振动测试包含刚体线位移和角位移六维运动参数.其测试方法是,将光电传感器光源与被测体固结在一起,通过求解光源在三个投影屏上随着被测体运动变化的数学模型而实现的.该传感器由激光器、投影屏、光电探测器件及处理电路、数据采集、数据处理等部分组成.并以固结在被测体上的三个激光器的交点为基点,建立其线位移数学模型;以方向余弦法来确定被测体的角位移,建立其角位移数学模型.     

Growth Stresses in the Oxide Scales on TiAl Alloys at 800 and 900°C

In the oxidation of TiAl alloys, the role of scale-growth stresses formed during oxidation has, thus far, been unknown. In the present paper the oxide-growth stresses were investigated by the deflection-test method in monofacial oxidation (DTMO) accompanied by acoustic-emission measurements. On unmodified surfaces the growth stresses are compressive and reach levels of around –100 MPa. At the same time, significant acoustic emission occurs indicating that even under isothermal conditions, stresses are relieved by a scale-cracking mechanism. For oxide scales on TiAl surfaces, which had been ion implanted with chlorine before oxidation, a very thin protective alumina layer is formed which, however, develops growth stresses in the range of several GPa, accompanied by intensive acoustic emission. In all stress–time curves, a dynamic situation is observed. This consists of phases of stress relief by scale microcracking and phases of stresses increase due to crack healing and further oxide growth. As a result, the level of stress as a function of oxidation time, is characterized by an oscillating course.     

Microscopic and Macroscopic Growth Rates of Fatigue Cracks in Steels and Alloys under the Influence of Crack Closure

On the basis of the experimental data, we show that the difference between the macroscopic and microscopic fatigue crack growth rates in the second section of the kinetic diagram of fatigue fracture is caused by the effect of crack closure within the limits of its existence. We establish the relationships between the macroscopic and microscopic fatigue crack growth rates and the structure of the material in the second section of the diagram for various values of the load ratio with regard for the effect of crack closure and propose a procedure of examination of the fracture processes in structural materials based on the analysis of microscopic and macroscopic fatigue crack growth rates.     

Numerical simulations of specimen size and mismatch effects in ductile crack growth - Part II: Near-tip stress fields

The effect of ductile crack growth on the near tip stress field in two different specimen geometries has been investigated. For homogeneous specimens it is observed that the peak stress level increases with ductile crack growth. The effect is most pronounced up to about 1 mm of crack growth. For low and intermediate hardening there is a significant effect of specimen size on the stress level. In case of mismatch in yield stress, the simulations show that the increase in stress level in the material with the lower yield stress is of a similar magnitude as is the case for stationary cracks. In case of ductile crack growth deviation from the original crack plane occurs, the highest stresses are still found close to the interface, and not in front of the current crack tip.     

Rate of ammonia oxidation in a synthetic saline wastewater by a nitrifying mixed‐culture

Most of the kinetic studies on nitrification have been performed in diluted salts medium. In this work, the ammonia oxidation rate (AOR) was determined by respirometry at different ammonia (0.01 and 33.5 mg N‐NH₃ L^?1), nitrite (0–450 mg N‐NO₂^? L^?1) and nitrate (0 and 275 mg N‐NO₃^? L^?1) concentrations in a saline medium at 30 °C and pH 7.5. Sodium azide was used to uncouple the ammonia and nitrite oxidation, so as to measure independently the AOR. It was determined that ammonia causes substrate inhibition and that nitrite and nitrate exhibit product inhibition upon the AOR. The effects of ammonia, nitrite and nitrate were represented by the Andrews equation (maximal ammonia oxidation rate, r_AOMAX, = 43.2 [mg N‐NH₃ (g VSS_AO h)^?1]; half saturation constant, K_SAO, = 0.11 mg N‐NH₃ L^?1; inhibition constant K_IAO, = 7.65 mg N‐NH₃ L^?1), by the non‐competitive inhibition model (inhibition constant, K_INI, = 176 mg N‐NO₂^? L^?1) and by the partially competitive inhibition model (inhibition constant, K_INA, = 3.3 mg N‐NO₃^? L^?1; α factor = 0.24), respectively. The r_AOMAX value is smaller, and the K_SAO value larger, than the values reported in diluted salts medium; the K_IAO value is comparable to those reported. Process simulations with the kinetic model in batch nitrifying reactors showed that the inhibitory effects of nitrite and nitrate are significant for initial ammonia concentrations larger than 100 mg N‐NH₄⁺ L^?1. Copyright © 2005 Society of Chemical Industry     

Grain Growth Behavior of 5Cr21Mn9Ni4N Steel Micro-Alloyed by Rare Earth

Grain growth behavior of 5Cr21Mn9Ni4NRE steel was experimentally studied at various solid solution treatment temperatures and holding for different times. The experimental results show that the 5Cr21Mn9Ni4NRE steel has the feature of sharp austenite grain coarsening after solid solution treatment at the temperature above 1150 ℃. RE added in the steel has the benefit to restrain grain growth and increase grain growth activation energy.     

三角函数型增长曲线预测油田开发指标

提出了用三角函数表示的一类用于油田开发指标预测的增长曲线共6条，从而进一步完善和丰富了现有的增长曲线法。提出和推导了它们的Np-t、Qt-t、Qt-Np关系式、（Np/NRmax)Qtmax准数计算式以及参数求解式。其特片研究表明，它们特征相近；（Np/NRamx)Qtmax变化范围为0-0.36785，属于峰值产量出现在油田开发初期的情况，其Qt-Np关系为一不对称的拱形曲线。提出了求取曲线参数的过原点重复线性回归法。双河油田的实例表明该方法有一定实用价值。     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.